JP2009283922A5 - - Google Patents
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- Publication number
- JP2009283922A5 JP2009283922A5 JP2009100931A JP2009100931A JP2009283922A5 JP 2009283922 A5 JP2009283922 A5 JP 2009283922A5 JP 2009100931 A JP2009100931 A JP 2009100931A JP 2009100931 A JP2009100931 A JP 2009100931A JP 2009283922 A5 JP2009283922 A5 JP 2009283922A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- single crystal
- substrate
- crystal semiconductor
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 60
- 239000000758 substrate Substances 0.000 claims 26
- 239000013078 crystal Substances 0.000 claims 20
- 238000000034 method Methods 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 8
- 238000010438 heat treatment Methods 0.000 claims 4
- 150000002500 ions Chemical class 0.000 claims 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 3
- 239000007789 gas Substances 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009100931A JP5496540B2 (ja) | 2008-04-24 | 2009-04-17 | 半導体基板の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008113320 | 2008-04-24 | ||
| JP2008113320 | 2008-04-24 | ||
| JP2009100931A JP5496540B2 (ja) | 2008-04-24 | 2009-04-17 | 半導体基板の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009283922A JP2009283922A (ja) | 2009-12-03 |
| JP2009283922A5 true JP2009283922A5 (enExample) | 2012-03-08 |
| JP5496540B2 JP5496540B2 (ja) | 2014-05-21 |
Family
ID=41215417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009100931A Expired - Fee Related JP5496540B2 (ja) | 2008-04-24 | 2009-04-17 | 半導体基板の作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8349702B2 (enExample) |
| JP (1) | JP5496540B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5755931B2 (ja) | 2010-04-28 | 2015-07-29 | 株式会社半導体エネルギー研究所 | 半導体膜の作製方法、電極の作製方法、２次電池の作製方法、および太陽電池の作製方法 |
| JP5819614B2 (ja) * | 2011-02-02 | 2015-11-24 | 信越化学工業株式会社 | Ｓｏｉウェーハの製造方法 |
| US20130168693A1 (en) * | 2011-02-15 | 2013-07-04 | Sumitomo Electric Industries, Ltd. | Protective-film-attached composite substrate and method of manufacturing semiconductor device |
| US8524572B2 (en) | 2011-10-06 | 2013-09-03 | Micron Technology, Inc. | Methods of processing units comprising crystalline materials, and methods of forming semiconductor-on-insulator constructions |
| US9444019B1 (en) * | 2015-09-21 | 2016-09-13 | Epistar Corporation | Method for reusing a substrate for making light-emitting device |
| FR3091619B1 (fr) * | 2019-01-07 | 2021-01-29 | Commissariat Energie Atomique | Procédé de guérison avant transfert d’une couche semi-conductrice |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61202417A (ja) * | 1985-03-06 | 1986-09-08 | Oki Electric Ind Co Ltd | シリコンエピタキシヤル層の形成方法 |
| JPS6248014A (ja) * | 1985-08-28 | 1987-03-02 | Sony Corp | 半導体層の固相成長方法 |
| JPH02100315A (ja) * | 1988-10-07 | 1990-04-12 | Fuji Electric Co Ltd | 結晶質シリコン膜の生成方法 |
| JPH03101121A (ja) * | 1989-09-13 | 1991-04-25 | Sanyo Electric Co Ltd | Ｓｏｉ構造の形成方法 |
| FR2681472B1 (fr) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
| JPH1174209A (ja) * | 1997-08-27 | 1999-03-16 | Denso Corp | 半導体基板の製造方法 |
| JPH1197379A (ja) | 1997-07-25 | 1999-04-09 | Denso Corp | 半導体基板及び半導体基板の製造方法 |
| JPH1140786A (ja) | 1997-07-18 | 1999-02-12 | Denso Corp | 半導体基板及びその製造方法 |
| US6534380B1 (en) | 1997-07-18 | 2003-03-18 | Denso Corporation | Semiconductor substrate and method of manufacturing the same |
| JPH11121310A (ja) | 1997-10-09 | 1999-04-30 | Denso Corp | 半導体基板の製造方法 |
| JP3358550B2 (ja) * | 1998-07-07 | 2002-12-24 | 信越半導体株式会社 | Ｓｏｉウエーハの製造方法ならびにこの方法で製造されるｓｏｉウエーハ |
| JP3485081B2 (ja) * | 1999-10-28 | 2004-01-13 | 株式会社デンソー | 半導体基板の製造方法 |
| EP1482549B1 (en) * | 2003-05-27 | 2011-03-30 | S.O.I. Tec Silicon on Insulator Technologies S.A. | Method of fabrication of a heteroepitaxial microstructure |
| US7452757B2 (en) * | 2002-05-07 | 2008-11-18 | Asm America, Inc. | Silicon-on-insulator structures and methods |
| JP2004103855A (ja) | 2002-09-10 | 2004-04-02 | Canon Inc | 基板及びその製造方法 |
| US7538010B2 (en) * | 2003-07-24 | 2009-05-26 | S.O.I.Tec Silicon On Insulator Technologies | Method of fabricating an epitaxially grown layer |
| JP4554180B2 (ja) | 2003-09-17 | 2010-09-29 | ソニー株式会社 | 薄膜半導体デバイスの製造方法 |
| EP2002484A4 (en) | 2006-04-05 | 2016-06-08 | Silicon Genesis Corp | METHOD AND STRUCTURE FOR MANUFACTURING PHOTOVOLTAIC CELLS USING A LAYER TRANSFER PROCESS |
| FR2917232B1 (fr) | 2007-06-06 | 2009-10-09 | Soitec Silicon On Insulator | Procede de fabrication d'une structure pour epitaxie sans zone d'exclusion. |
| US7947523B2 (en) | 2008-04-25 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing photoelectric conversion device |
-
2009
- 2009-04-17 JP JP2009100931A patent/JP5496540B2/ja not_active Expired - Fee Related
- 2009-04-20 US US12/426,305 patent/US8349702B2/en not_active Expired - Fee Related
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