JP2010016355A5 - - Google Patents

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Publication number
JP2010016355A5
JP2010016355A5 JP2009122749A JP2009122749A JP2010016355A5 JP 2010016355 A5 JP2010016355 A5 JP 2010016355A5 JP 2009122749 A JP2009122749 A JP 2009122749A JP 2009122749 A JP2009122749 A JP 2009122749A JP 2010016355 A5 JP2010016355 A5 JP 2010016355A5
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JP
Japan
Prior art keywords
semiconductor layer
single crystal
layer
semiconductor
forming
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JP2009122749A
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English (en)
Japanese (ja)
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JP5559984B2 (ja
JP2010016355A (ja
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Priority to JP2009122749A priority Critical patent/JP5559984B2/ja
Priority claimed from JP2009122749A external-priority patent/JP5559984B2/ja
Publication of JP2010016355A publication Critical patent/JP2010016355A/ja
Publication of JP2010016355A5 publication Critical patent/JP2010016355A5/ja
Application granted granted Critical
Publication of JP5559984B2 publication Critical patent/JP5559984B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009122749A 2008-06-06 2009-05-21 半導体装置の作製方法 Expired - Fee Related JP5559984B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009122749A JP5559984B2 (ja) 2008-06-06 2009-05-21 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008149716 2008-06-06
JP2008149716 2008-06-06
JP2009122749A JP5559984B2 (ja) 2008-06-06 2009-05-21 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2010016355A JP2010016355A (ja) 2010-01-21
JP2010016355A5 true JP2010016355A5 (enExample) 2012-06-21
JP5559984B2 JP5559984B2 (ja) 2014-07-23

Family

ID=41400693

Family Applications (1)

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JP2009122749A Expired - Fee Related JP5559984B2 (ja) 2008-06-06 2009-05-21 半導体装置の作製方法

Country Status (3)

Country Link
US (2) US7951656B2 (enExample)
JP (1) JP5559984B2 (enExample)
CN (1) CN101599464B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7951656B2 (en) * 2008-06-06 2011-05-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8338218B2 (en) * 2008-06-26 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device module and manufacturing method of the photoelectric conversion device module
JP5415853B2 (ja) 2009-07-10 2014-02-12 東京エレクトロン株式会社 表面処理方法
DE102014005339B4 (de) * 2014-01-28 2022-06-09 Wolfgang B. Thörner Verfahren zur Herstellung eines Kontaktelements
KR101781175B1 (ko) * 2015-08-31 2017-09-22 가천대학교 산학협력단 초박막 저결정성 실리콘 채널을 갖는 무접합 전계효과 트랜지스터 및 그 제조방법

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JP2005268682A (ja) 2004-03-22 2005-09-29 Canon Inc 半導体基材及び太陽電池の製造方法
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CN100440537C (zh) * 2006-04-11 2008-12-03 北京大学深圳研究生院 一种部分耗尽的soi mos晶体管及其制作方法
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