JP2009135473A5 - - Google Patents

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Publication number
JP2009135473A5
JP2009135473A5 JP2008280835A JP2008280835A JP2009135473A5 JP 2009135473 A5 JP2009135473 A5 JP 2009135473A5 JP 2008280835 A JP2008280835 A JP 2008280835A JP 2008280835 A JP2008280835 A JP 2008280835A JP 2009135473 A5 JP2009135473 A5 JP 2009135473A5
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JP
Japan
Prior art keywords
semiconductor layer
single crystal
conductivity type
forming
layer
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JP2008280835A
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English (en)
Japanese (ja)
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JP5352190B2 (ja
JP2009135473A (ja
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Priority to JP2008280835A priority Critical patent/JP5352190B2/ja
Priority claimed from JP2008280835A external-priority patent/JP5352190B2/ja
Publication of JP2009135473A publication Critical patent/JP2009135473A/ja
Publication of JP2009135473A5 publication Critical patent/JP2009135473A5/ja
Application granted granted Critical
Publication of JP5352190B2 publication Critical patent/JP5352190B2/ja
Expired - Fee Related legal-status Critical Current
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JP2008280835A 2007-11-09 2008-10-31 光電変換装置 Expired - Fee Related JP5352190B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008280835A JP5352190B2 (ja) 2007-11-09 2008-10-31 光電変換装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007292650 2007-11-09
JP2007292650 2007-11-09
JP2008280835A JP5352190B2 (ja) 2007-11-09 2008-10-31 光電変換装置

Publications (3)

Publication Number Publication Date
JP2009135473A JP2009135473A (ja) 2009-06-18
JP2009135473A5 true JP2009135473A5 (enExample) 2011-12-08
JP5352190B2 JP5352190B2 (ja) 2013-11-27

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Family Applications (1)

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JP2008280835A Expired - Fee Related JP5352190B2 (ja) 2007-11-09 2008-10-31 光電変換装置

Country Status (4)

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US (1) US8394655B2 (enExample)
JP (1) JP5352190B2 (enExample)
KR (1) KR101608953B1 (enExample)
WO (1) WO2009060808A1 (enExample)

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