KR101608953B1 - 광전 변환 장치 및 그 제조 방법 - Google Patents

광전 변환 장치 및 그 제조 방법 Download PDF

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Publication number
KR101608953B1
KR101608953B1 KR1020107012348A KR20107012348A KR101608953B1 KR 101608953 B1 KR101608953 B1 KR 101608953B1 KR 1020107012348 A KR1020107012348 A KR 1020107012348A KR 20107012348 A KR20107012348 A KR 20107012348A KR 101608953 B1 KR101608953 B1 KR 101608953B1
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semiconductor layer
single crystal
layer
crystal semiconductor
electrode
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Korean (ko)
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KR20100088151A (ko
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순페이 야마자키
야스유키 아라이
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Photovoltaic Devices (AREA)
KR1020107012348A 2007-11-09 2008-10-28 광전 변환 장치 및 그 제조 방법 Expired - Fee Related KR101608953B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-292650 2007-11-09
JP2007292650 2007-11-09

Publications (2)

Publication Number Publication Date
KR20100088151A KR20100088151A (ko) 2010-08-06
KR101608953B1 true KR101608953B1 (ko) 2016-04-04

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KR1020107012348A Expired - Fee Related KR101608953B1 (ko) 2007-11-09 2008-10-28 광전 변환 장치 및 그 제조 방법

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US (1) US8394655B2 (enExample)
JP (1) JP5352190B2 (enExample)
KR (1) KR101608953B1 (enExample)
WO (1) WO2009060808A1 (enExample)

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US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
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US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
US8299472B2 (en) 2009-12-08 2012-10-30 Young-June Yu Active pixel sensor with nanowire structured photodetectors
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US9000353B2 (en) 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
US8546742B2 (en) 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
US8835831B2 (en) 2010-06-22 2014-09-16 Zena Technologies, Inc. Polarized light detecting device and fabrication methods of the same
US8274039B2 (en) 2008-11-13 2012-09-25 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
WO2010037102A2 (en) * 2008-09-29 2010-04-01 Thinsilicon Corporation Monolithically-integrated solar module
JP2012522403A (ja) * 2009-05-06 2012-09-20 シンシリコン・コーポレーション 光起電力電池、及び、半導体層スタックにおいて光補足を高める方法
JP2012522404A (ja) * 2009-06-10 2012-09-20 シンシリコン・コーポレーション 光起電モジュール、及び複数半導体層スタックを有する光起電モジュールを製造する方法
US20110114156A1 (en) * 2009-06-10 2011-05-19 Thinsilicon Corporation Photovoltaic modules having a built-in bypass diode and methods for manufacturing photovoltaic modules having a built-in bypass diode
KR101785997B1 (ko) 2009-10-30 2017-10-17 주식회사 골드피크이노베이션즈 무선통신 시스템에서 요소 반송파 집합 정보 전송방법 및 그 기지국, 단말의 수신방법
US8704083B2 (en) * 2010-02-11 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and fabrication method thereof
JP2013058562A (ja) 2011-09-07 2013-03-28 Semiconductor Energy Lab Co Ltd 光電変換装置
KR101832230B1 (ko) 2012-03-05 2018-04-13 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR20140082012A (ko) * 2012-12-21 2014-07-02 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR102006074B1 (ko) * 2017-10-24 2019-07-31 경희대학교 산학협력단 나노와이어 어레이를 포함하는 태양 전지 및 이의 제조 방법
FR3073081B1 (fr) * 2017-10-27 2019-11-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives Substrat semi-conducteur protege pour son transport et sa manipulation

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Also Published As

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JP5352190B2 (ja) 2013-11-27
WO2009060808A1 (en) 2009-05-14
JP2009135473A (ja) 2009-06-18
US8394655B2 (en) 2013-03-12
KR20100088151A (ko) 2010-08-06
US20090120498A1 (en) 2009-05-14

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