JP5352190B2 - 光電変換装置 - Google Patents

光電変換装置 Download PDF

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Publication number
JP5352190B2
JP5352190B2 JP2008280835A JP2008280835A JP5352190B2 JP 5352190 B2 JP5352190 B2 JP 5352190B2 JP 2008280835 A JP2008280835 A JP 2008280835A JP 2008280835 A JP2008280835 A JP 2008280835A JP 5352190 B2 JP5352190 B2 JP 5352190B2
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Japan
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semiconductor layer
electrode
layer
single crystal
unit cell
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Expired - Fee Related
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JP2008280835A
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English (en)
Japanese (ja)
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JP2009135473A (ja
JP2009135473A5 (enExample
Inventor
舜平 山崎
康行 荒井
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008280835A priority Critical patent/JP5352190B2/ja
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Publication of JP2009135473A5 publication Critical patent/JP2009135473A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Photovoltaic Devices (AREA)
JP2008280835A 2007-11-09 2008-10-31 光電変換装置 Expired - Fee Related JP5352190B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008280835A JP5352190B2 (ja) 2007-11-09 2008-10-31 光電変換装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007292650 2007-11-09
JP2007292650 2007-11-09
JP2008280835A JP5352190B2 (ja) 2007-11-09 2008-10-31 光電変換装置

Publications (3)

Publication Number Publication Date
JP2009135473A JP2009135473A (ja) 2009-06-18
JP2009135473A5 JP2009135473A5 (enExample) 2011-12-08
JP5352190B2 true JP5352190B2 (ja) 2013-11-27

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Family Applications (1)

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JP2008280835A Expired - Fee Related JP5352190B2 (ja) 2007-11-09 2008-10-31 光電変換装置

Country Status (4)

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US (1) US8394655B2 (enExample)
JP (1) JP5352190B2 (enExample)
KR (1) KR101608953B1 (enExample)
WO (1) WO2009060808A1 (enExample)

Cited By (1)

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KR20190045510A (ko) * 2017-10-24 2019-05-03 경희대학교 산학협력단 나노와이어 어레이를 포함하는 태양 전지 및 이의 제조 방법

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US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
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US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
US8546742B2 (en) 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
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US8835831B2 (en) 2010-06-22 2014-09-16 Zena Technologies, Inc. Polarized light detecting device and fabrication methods of the same
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US20100282314A1 (en) * 2009-05-06 2010-11-11 Thinsilicion Corporation Photovoltaic cells and methods to enhance light trapping in semiconductor layer stacks
WO2010144421A2 (en) 2009-06-10 2010-12-16 Thinsilicon Corporation Photovoltaic modules and methods of manufacturing photovoltaic modules having multiple semiconductor layer stacks
US20110114156A1 (en) * 2009-06-10 2011-05-19 Thinsilicon Corporation Photovoltaic modules having a built-in bypass diode and methods for manufacturing photovoltaic modules having a built-in bypass diode
KR101785997B1 (ko) 2009-10-30 2017-10-17 주식회사 골드피크이노베이션즈 무선통신 시스템에서 요소 반송파 집합 정보 전송방법 및 그 기지국, 단말의 수신방법
US8704083B2 (en) 2010-02-11 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and fabrication method thereof
JP2013058562A (ja) 2011-09-07 2013-03-28 Semiconductor Energy Lab Co Ltd 光電変換装置
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190045510A (ko) * 2017-10-24 2019-05-03 경희대학교 산학협력단 나노와이어 어레이를 포함하는 태양 전지 및 이의 제조 방법
KR102006074B1 (ko) * 2017-10-24 2019-07-31 경희대학교 산학협력단 나노와이어 어레이를 포함하는 태양 전지 및 이의 제조 방법

Also Published As

Publication number Publication date
JP2009135473A (ja) 2009-06-18
US8394655B2 (en) 2013-03-12
US20090120498A1 (en) 2009-05-14
KR101608953B1 (ko) 2016-04-04
KR20100088151A (ko) 2010-08-06
WO2009060808A1 (en) 2009-05-14

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