JP5248994B2 - 光電変換装置の製造方法 - Google Patents
光電変換装置の製造方法 Download PDFInfo
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- JP5248994B2 JP5248994B2 JP2008294261A JP2008294261A JP5248994B2 JP 5248994 B2 JP5248994 B2 JP 5248994B2 JP 2008294261 A JP2008294261 A JP 2008294261A JP 2008294261 A JP2008294261 A JP 2008294261A JP 5248994 B2 JP5248994 B2 JP 5248994B2
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Images
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
- H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type the devices comprising monocrystalline or polycrystalline materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/548—Amorphous silicon PV cells
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Description
図1に、本形態に係る光電変換装置100の断面の模式図を示す。また、図2に、本形態に係る光電変換装置100の上面の模式図を示す。なお、図1は、図2中のO−P切断線に対応する断面図の一例である。
本形態では、上記実施の形態1と異なる光電変換装置の製造方法の例について説明する。具体的には、上記実施の形態1では、脆化層105、第1不純物半導体層108、第1電極106、絶縁層104の形成順序について(1)の例を説明したが、本形態では、(2)〜(4)の例について説明する。なお、脆化層105、第1不純物半導体層108、第1電極106、絶縁層104の形成順序以外については上記実施の形態1に準ずるため、説明は省略する。
本形態では、上記実施の形態1と異なる光電変換装置の製造方法の例について説明する。
本形態では、上記実施の形態1と異なる光電変換装置の製造方法の例について説明する。
本形態では、ユニットセルを複数積層した所謂タンデム型の光電変換装置の例について説明する。本形態では、ユニットセルを2層積層した光電変換装置について説明する。
本形態では、ユニットセルを複数積層した光電変換装置、具体的にはユニットセルを3層積層した所謂スタック型の光電変換装置300を示す。
実施形態1乃至6により得られる光電変換装置を用いて太陽光発電モジュールを製造することができる。本実施の形態では、上記実施の形態1に示す光電変換装置を用いた太陽光発電モジュールの一例を図24(A)に示す。太陽光発電モジュール1028は、支持基板102の一面上に設けられたユニットセル120により構成されている。支持基板102とユニットセル120との間には、支持基板102側から絶縁層104、第1電極106が設けられている。第1電極106は補助電極116と接続している。
図25は上記実施の形態7で示した太陽光発電モジュール1028を用いた太陽光発電システムの一例を示す。一又は複数の太陽光発電モジュール1028の出力電力は、充電制御回路1029により蓄電池1030を充電する。蓄電池1030の充電量が多い場合には、負荷1031に直接出力される場合もある。
101 単結晶半導体基板
102 支持基板
103 単結晶半導体基板
104 絶縁層
105 脆化層
106 第1電極
107 保護層
108 第1不純物半導体層
109 剥離基板
110 第1単結晶半導体層
111 非晶質半導体層
112 第2単結晶半導体層
113 非晶質半導体層
114 第2不純物半導体層
116 補助電極
118 第2電極
Claims (7)
- 単結晶半導体基板上に、第1電極を形成し、
前記第1電極を介して前記単結晶半導体基板にイオン又はクラスターイオンを照射することにより脆化層を、前記第1電極を介して前記単結晶半導体基板に不純物元素を添加することにより第1不純物半導体層を、それぞれ形成し、
前記第1電極上に、絶縁層を形成し、
前記絶縁層と支持基板とを重ね合わせて貼り合わせた後、前記脆化層又は前記脆化層の近傍を分離面として前記単結晶半導体基板を分離させることにより、前記支持基板上に第1単結晶半導体層を形成し、
シラン系ガスと水素との混合ガスを原料ガスとして、プラズマ化学気相成長法により、前記第1単結晶半導体層上に半導体層をエピタキシャル成長させて第2単結晶半導体層を形成し、
シラン系ガスと水素との混合ガスと、一導電型を付与する不純物元素を含むドーピングガスと、を原料ガスとして、プラズマ化学気相成長法により、前記第2単結晶半導体層上に半導体層をエピタキシャル成長させて、前記第1不純物半導体層とは逆の導電型を有する第2不純物半導体層を形成し、
前記第2不純物半導体層上に、第2電極を形成することを特徴とする光電変換装置の製造方法。 - 単結晶半導体基板上に、第1電極を形成し、
前記第1電極を介して前記単結晶半導体基板にイオン又はクラスターイオンを照射することにより脆化層を、前記第1電極を介して前記単結晶半導体基板に不純物元素を添加することにより第1不純物半導体層を、それぞれ形成し、
前記第1電極上に、絶縁層を形成し、
前記絶縁層と支持基板とを重ね合わせて貼り合わせた後、前記脆化層又は前記脆化層の近傍を分離面として前記単結晶半導体基板を分離させることにより、前記支持基板上に第1単結晶半導体層を形成し、
シラン系ガスと水素との混合ガスを原料ガスとして、プラズマ化学気相成長法により、前記第1単結晶半導体層上に半導体層をエピタキシャル成長させて第2単結晶半導体層を形成し、
シラン系ガスと水素との混合ガスと、一導電型を付与する不純物元素を含むドーピングガスと、を原料ガスとして、プラズマ化学気相成長法により、前記第2単結晶半導体層上に半導体層をエピタキシャル成長させて、前記第1不純物半導体層とは逆の導電型を有する第2不純物半導体層を形成し、
前記第2不純物半導体層上に、前記第2不純物半導体層とは逆の導電型を有する第3不純物半導体層を形成し、
前記第3不純物半導体層上に、非単結晶半導体層を形成し、
前記非単結晶半導体層上に、前記第3不純物半導体層とは逆の導電型を有する第4不純物半導体層を形成し、
前記第4不純物半導体層上に、第2電極を形成することを特徴とする光電変換装置の製造方法。 - 単結晶半導体基板上に、第1電極を形成し、
前記第1電極を介して前記単結晶半導体基板にイオン又はクラスターイオンを照射することにより脆化層を、前記第1電極を介して前記単結晶半導体基板に不純物元素を添加することにより第1不純物半導体層を、それぞれ形成し、
前記第1電極上に、絶縁層を形成し、
前記絶縁層と支持基板とを重ね合わせて貼り合わせた後、前記脆化層又は前記脆化層の近傍を分離面として前記単結晶半導体基板を分離させることにより、前記支持基板上に第1単結晶半導体層を形成し、
シラン系ガスと水素との混合ガスを原料ガスとして、プラズマ化学気相成長法により、前記第1単結晶半導体層上に半導体層をエピタキシャル成長させて第2単結晶半導体層を形成し、
シラン系ガスと水素との混合ガスと、一導電型を付与する不純物元素を含むドーピングガスと、を原料ガスとして、プラズマ化学気相成長法により、前記第2単結晶半導体層上に半導体層をエピタキシャル成長させて、前記第1不純物半導体層とは逆の導電型を有する第2不純物半導体層を形成し、
前記第2不純物半導体層上に、前記第2不純物半導体層とは逆の導電型を有する第3不純物半導体層を形成し、
前記第3不純物半導体層上に、第1非単結晶半導体層を形成し、
前記第1非単結晶半導体層上に、前記第3不純物半導体層とは逆の導電型を有する第4不純物半導体層を形成し、
前記第4不純物半導体層上に、前記第4不純物半導体層とは逆の導電型を有する第5不純物半導体層を形成し、
前記第5不純物半導体層上に、第2非単結晶半導体層を形成し、
前記第2非単結晶半導体層上に、前記第5不純物半導体層とは逆の導電型を有する第6不純物半導体層を形成し、
前記第6不純物半導体層上に、第2電極を形成することを特徴とする光電変換装置の製造方法。 - 請求項3において、
前記第2非単結晶半導体層のエネルギーギャップは、前記第1非単結晶半導体層のエネルギーギャップよりも大きいことを特徴とする光電変換装置の製造方法。 - 請求項1乃至請求項4のいずれか一において、
前記ドーピングガスとして、ジボラン又はフォスフィンを用いることを特徴とする光電変換装置の製造方法。 - 請求項1乃至請求項5のいずれか一において、
前記脆化層の形成には、水素を含む原料ガスにより生成されるイオン又はクラスターイオンを用い、
前記イオン又はクラスターイオンは、生成されたイオンを質量分離しないで電圧で加速して、前記単結晶半導体基板に照射することを特徴とする光電変換装置の製造方法。 - 請求項6において、
前記イオン又はクラスターイオンは、H 3 +イオンを含むことを特徴とする光電変換装置の製造方法。
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2008
- 2008-11-18 JP JP2008294261A patent/JP5248994B2/ja not_active Expired - Fee Related
- 2008-11-26 EP EP08020573A patent/EP2065946A2/en not_active Withdrawn
- 2008-11-26 US US12/324,065 patent/US7985604B2/en not_active Expired - Fee Related
- 2008-11-28 KR KR20080119602A patent/KR101483417B1/ko active IP Right Grant
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JP2009152566A (ja) | 2009-07-09 |
US7985604B2 (en) | 2011-07-26 |
US20090142908A1 (en) | 2009-06-04 |
KR101483417B1 (ko) | 2015-01-16 |
KR20090056899A (ko) | 2009-06-03 |
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