MY159267A - Method for fabricating a three-dimensional thin-film semiconductor substrate from a template - Google Patents

Method for fabricating a three-dimensional thin-film semiconductor substrate from a template

Info

Publication number
MY159267A
MY159267A MYPI2011004548A MYPI2011004548A MY159267A MY 159267 A MY159267 A MY 159267A MY PI2011004548 A MYPI2011004548 A MY PI2011004548A MY PI2011004548 A MYPI2011004548 A MY PI2011004548A MY 159267 A MY159267 A MY 159267A
Authority
MY
Malaysia
Prior art keywords
template
semiconductor
semiconductor substrate
dimensional thin
dimensional
Prior art date
Application number
MYPI2011004548A
Inventor
David Xuan-Qi Wang
Mehrdad M Moslehi
Original Assignee
Solexel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solexel Inc filed Critical Solexel Inc
Publication of MY159267A publication Critical patent/MY159267A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A METHOD IS PRESENTED FOR FABRICATION OF A THREE-DIMENSIONAL THIN-FILM SOLAR CELL SEMICONDUCTOR SUBSTRATE FROM A TEMPLATE. A SEMICONDUCTOR TEMPLATE HAVING THREE-DIMENSIONAL SURFACE FEATURES COMPRISING A TOP SURFACES SUBSTANTIALLY ALIGNED ALONG A (100) CRYSTALLOGRAPHIC PLANE OF SEMICONDUCTOR TEMPLATE AND A PLURALITY OF INVERTED PYRAMIDAL CAVITIES DEFINED BY SIDEWALLS SUBSTANTIALLY ALIGNED ALONG A (111) CRYSTALLOGRAPHIC PLANE IS FORMED ACCORDING TO AN ANISOTROPIC ETCHING PROCESS. A DOSE OF RELATIVELY OF HIGH ENERGY LIGHT-MASS SPECIES IS IMPLANTED IN THE TEMPLATE AT A UNIFORM DEPTH AND PARALLEL TO THE TOP SURFACES AND SAID SIDEWALLS DEFINING THE INVERTED PYRAMIDAL CAVITIES OF THE TEMPLATE. THE SEMICONDUCTOR TEMPLATE IS ANNEALED TO CONVERT THE DOSE OF RELATIVELY OF HIGH ENERGY LIGHT-MASS SPECIES TO A MECHANICALLY-WEAK-THIN LAYER. THE SEMICONDUCTOR TEMPLATE IS CLEAVED ALONG THE MECHANICALLY-WEAK-THIN LAYER TO RELEASE A THREE-DIMENSIONAL THIN-FILM SEMICONDUCTOR SUBSTRATE FROM THE SEMICONDUCTOR TEMPLATE. THE MOST ILLUSTRATIVE DRAWING:
MYPI2011004548A 2009-03-24 2010-03-24 Method for fabricating a three-dimensional thin-film semiconductor substrate from a template MY159267A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16283009P 2009-03-24 2009-03-24

Publications (1)

Publication Number Publication Date
MY159267A true MY159267A (en) 2016-12-30

Family

ID=42781482

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2011004548A MY159267A (en) 2009-03-24 2010-03-24 Method for fabricating a three-dimensional thin-film semiconductor substrate from a template

Country Status (3)

Country Link
EP (1) EP2412029A4 (en)
MY (1) MY159267A (en)
WO (1) WO2010111417A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010057060A2 (en) 2008-11-13 2010-05-20 Solexel, Inc. Methods and systems for manufacturing thin-film solar cells
US9318644B2 (en) 2009-05-05 2016-04-19 Solexel, Inc. Ion implantation and annealing for thin film crystalline solar cells
WO2012166749A2 (en) * 2011-05-27 2012-12-06 Solexel, Inc. Ion implantation and annealing for high efficiency back-contact back-junction solar cells
CN103137811B (en) * 2011-12-03 2015-11-25 清华大学 Light-emitting diode
CN103137812B (en) * 2011-12-03 2015-11-25 清华大学 Light-emitting diode
CN103137803B (en) * 2011-12-03 2015-08-26 清华大学 Light-emitting diode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1140832A (en) * 1997-07-17 1999-02-12 Ion Kogaku Kenkyusho:Kk Thin-film solar cell and manufacture therefor
CA2246087A1 (en) * 1998-08-28 2000-02-28 Northern Telecom Limited Method of cleaving a semiconductor wafer
AUPR174800A0 (en) * 2000-11-29 2000-12-21 Australian National University, The Semiconductor processing
US20090107545A1 (en) * 2006-10-09 2009-04-30 Soltaix, Inc. Template for pyramidal three-dimensional thin-film solar cell manufacturing and methods of use
US20080128641A1 (en) * 2006-11-08 2008-06-05 Silicon Genesis Corporation Apparatus and method for introducing particles using a radio frequency quadrupole linear accelerator for semiconductor materials

Also Published As

Publication number Publication date
WO2010111417A1 (en) 2010-09-30
EP2412029A4 (en) 2013-10-02
EP2412029A1 (en) 2012-02-01

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