ATE493764T1 - Photovoltaische vorrichtung und herstellungsverfahren dazu - Google Patents

Photovoltaische vorrichtung und herstellungsverfahren dazu

Info

Publication number
ATE493764T1
ATE493764T1 AT06006602T AT06006602T ATE493764T1 AT E493764 T1 ATE493764 T1 AT E493764T1 AT 06006602 T AT06006602 T AT 06006602T AT 06006602 T AT06006602 T AT 06006602T AT E493764 T1 ATE493764 T1 AT E493764T1
Authority
AT
Austria
Prior art keywords
crystal substrate
laser irradiation
underlying
production method
photovoltaic device
Prior art date
Application number
AT06006602T
Other languages
English (en)
Inventor
Toshio Asaumi
Toshiaki Baba
Akira Terakawa
Yasufumi Tsunomura
Original Assignee
Sanyo Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2005100446A external-priority patent/JP4703234B2/ja
Priority claimed from JP2006036005A external-priority patent/JP4439477B2/ja
Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Application granted granted Critical
Publication of ATE493764T1 publication Critical patent/ATE493764T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • H10F77/1462—Superlattices; Multiple quantum well structures comprising amorphous semiconductor layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
AT06006602T 2005-03-29 2006-03-29 Photovoltaische vorrichtung und herstellungsverfahren dazu ATE493764T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005094640 2005-03-29
JP2005100446A JP4703234B2 (ja) 2005-03-31 2005-03-31 光起電力装置及びその製造方法
JP2006036005A JP4439477B2 (ja) 2005-03-29 2006-02-14 光起電力素子及びその製造方法

Publications (1)

Publication Number Publication Date
ATE493764T1 true ATE493764T1 (de) 2011-01-15

Family

ID=36616940

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06006602T ATE493764T1 (de) 2005-03-29 2006-03-29 Photovoltaische vorrichtung und herstellungsverfahren dazu

Country Status (4)

Country Link
US (1) US7755157B2 (de)
EP (1) EP1708282B1 (de)
AT (1) ATE493764T1 (de)
DE (1) DE602006019167D1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008135654A (ja) * 2006-11-29 2008-06-12 Sanyo Electric Co Ltd 太陽電池モジュール
JP2008235521A (ja) * 2007-03-20 2008-10-02 Sanyo Electric Co Ltd 半導体基板の割断方法及び太陽電池の割断方法並びに太陽電池
JP5142565B2 (ja) * 2007-03-20 2013-02-13 三洋電機株式会社 太陽電池の製造方法
JP2009200095A (ja) * 2008-02-19 2009-09-03 Tokyo Electron Ltd 薄膜およびその薄膜を用いた半導体装置の製造方法
US7858427B2 (en) * 2009-03-03 2010-12-28 Applied Materials, Inc. Crystalline silicon solar cells on low purity substrate
US9276163B2 (en) * 2010-10-14 2016-03-01 Kaneka Corporation Method for manufacturing silicon-based solar cell
US10043934B2 (en) * 2011-06-08 2018-08-07 International Business Machines Corporation Silicon-containing heterojunction photovoltaic element and device
JP5425349B1 (ja) 2012-04-25 2014-02-26 株式会社カネカ 太陽電池およびその製造方法、ならびに太陽電池モジュール
MY168566A (en) * 2012-10-02 2018-11-13 Kaneka Corp Method for manufacturing crystalline silicon solar cell, method for manufacturing solar cell module, crystalline silicon solar cell, and solar cell module
JP5759639B2 (ja) 2013-05-29 2015-08-05 株式会社カネカ 太陽電池およびその製造方法、ならびに太陽電池モジュールおよびその製造方法
US9634176B2 (en) 2013-05-29 2017-04-25 Kaneka Corporation Method for manufacturing crystalline silicon-based solar cell and method for manufacturing crystalline silicon-based solar cell module
CN105684165B (zh) 2013-10-30 2017-12-15 株式会社钟化 太阳能电池及其制造方法、以及太阳能电池模块
TW201526252A (zh) * 2013-12-25 2015-07-01 Neo Solar Power Corp 太陽能電池及其製造方法
EP4120155A1 (de) * 2014-05-27 2023-01-18 Maxeon Solar Pte. Ltd. Schindelförmiges solarzellenmodul
JP6592447B2 (ja) 2014-10-06 2019-10-16 株式会社カネカ 太陽電池および太陽電池モジュール、ならびに太陽電池および太陽電池モジュールの製造方法
DE102018123484A1 (de) * 2018-09-24 2020-03-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Vereinzeln eines Halbleiterbauelementes mit einem pn-Übergang und Halbleiterbauelement mit einem pn-Übergang
CN110480161A (zh) * 2019-07-04 2019-11-22 大族激光科技产业集团股份有限公司 晶片的切割方法及装置
CN113380926B (zh) * 2021-06-11 2023-02-10 安徽华晟新能源科技有限公司 异质结太阳能电池片的制造方法及异质结太阳能电池片
FR3136113B1 (fr) 2022-05-31 2024-10-25 Commissariat Energie Atomique système et procédé de fabrication d’un élément de cellule photovoltaïque

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4697041A (en) * 1985-02-15 1987-09-29 Teijin Limited Integrated solar cells
JP3623520B2 (ja) * 1992-11-17 2005-02-23 株式会社カネカ 薄膜太陽電池の製法
JPH07106619A (ja) 1993-10-07 1995-04-21 Sanyo Electric Co Ltd 太陽電池の製造方法
AUPO638997A0 (en) * 1997-04-23 1997-05-22 Unisearch Limited Metal contact scheme using selective silicon growth
JP2001274441A (ja) 2000-03-23 2001-10-05 Mitsubishi Heavy Ind Ltd 太陽電池パネルの一括切断処理方法
JP3490964B2 (ja) * 2000-09-05 2004-01-26 三洋電機株式会社 光起電力装置
US6566159B2 (en) * 2000-10-04 2003-05-20 Kaneka Corporation Method of manufacturing tandem thin-film solar cell
JP4171428B2 (ja) * 2003-03-20 2008-10-22 三洋電機株式会社 光起電力装置

Also Published As

Publication number Publication date
US20060219292A1 (en) 2006-10-05
US7755157B2 (en) 2010-07-13
EP1708282B1 (de) 2010-12-29
DE602006019167D1 (de) 2011-02-10
EP1708282A1 (de) 2006-10-04

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