ATE512465T1 - Verspannte halbleiter-einrichtungsstrukturen mit granularem halbleitermaterial - Google Patents

Verspannte halbleiter-einrichtungsstrukturen mit granularem halbleitermaterial

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Publication number
ATE512465T1
ATE512465T1 AT04810633T AT04810633T ATE512465T1 AT E512465 T1 ATE512465 T1 AT E512465T1 AT 04810633 T AT04810633 T AT 04810633T AT 04810633 T AT04810633 T AT 04810633T AT E512465 T1 ATE512465 T1 AT E512465T1
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AT
Austria
Prior art keywords
semiconductor material
semiconductor device
device structures
stressed
granular
Prior art date
Application number
AT04810633T
Other languages
English (en)
Inventor
Bruce Doris
Michael Belyansky
Diane Boyd
Dureseti Chidambarrao
Oleg Gluschenkov
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE512465T1 publication Critical patent/ATE512465T1/de

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    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/119—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
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    • H01L29/7845—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being a conductive material, e.g. silicided S/D or Gate
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    • H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
AT04810633T 2003-11-14 2004-11-09 Verspannte halbleiter-einrichtungsstrukturen mit granularem halbleitermaterial ATE512465T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/707,018 US7122849B2 (en) 2003-11-14 2003-11-14 Stressed semiconductor device structures having granular semiconductor material
PCT/US2004/037434 WO2005050701A2 (en) 2003-11-14 2004-11-09 Stressed semiconductor device structures having granular semiconductor material

Publications (1)

Publication Number Publication Date
ATE512465T1 true ATE512465T1 (de) 2011-06-15

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US (2) US7122849B2 (de)
EP (1) EP1683187B1 (de)
JP (1) JP4843498B2 (de)
KR (1) KR100946038B1 (de)
CN (1) CN100468785C (de)
AT (1) ATE512465T1 (de)
WO (1) WO2005050701A2 (de)

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JP4085891B2 (ja) * 2003-05-30 2008-05-14 ソニー株式会社 半導体装置およびその製造方法
US7410846B2 (en) * 2003-09-09 2008-08-12 International Business Machines Corporation Method for reduced N+ diffusion in strained Si on SiGe substrate
US6887751B2 (en) 2003-09-12 2005-05-03 International Business Machines Corporation MOSFET performance improvement using deformation in SOI structure
US6872641B1 (en) * 2003-09-23 2005-03-29 International Business Machines Corporation Strained silicon on relaxed sige film with uniform misfit dislocation density
US7144767B2 (en) * 2003-09-23 2006-12-05 International Business Machines Corporation NFETs using gate induced stress modulation
US7119403B2 (en) * 2003-10-16 2006-10-10 International Business Machines Corporation High performance strained CMOS devices
US7037770B2 (en) * 2003-10-20 2006-05-02 International Business Machines Corporation Method of manufacturing strained dislocation-free channels for CMOS
US7303949B2 (en) * 2003-10-20 2007-12-04 International Business Machines Corporation High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture
US7129126B2 (en) * 2003-11-05 2006-10-31 International Business Machines Corporation Method and structure for forming strained Si for CMOS devices
US7015082B2 (en) * 2003-11-06 2006-03-21 International Business Machines Corporation High mobility CMOS circuits
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US7122849B2 (en) 2006-10-17
US20080064172A1 (en) 2008-03-13
US7488658B2 (en) 2009-02-10
WO2005050701A3 (en) 2006-01-05
EP1683187A2 (de) 2006-07-26
JP4843498B2 (ja) 2011-12-21
KR20070015499A (ko) 2007-02-05
KR100946038B1 (ko) 2010-03-09
WO2005050701A2 (en) 2005-06-02
EP1683187A4 (de) 2008-08-27
JP2007511909A (ja) 2007-05-10
CN100468785C (zh) 2009-03-11
WO2005050701A8 (en) 2005-11-03
CN1879227A (zh) 2006-12-13
US20050106799A1 (en) 2005-05-19

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