JP4843498B2 - 半導体デバイス構造を製造する方法 - Google Patents

半導体デバイス構造を製造する方法 Download PDF

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JP4843498B2
JP4843498B2 JP2006539779A JP2006539779A JP4843498B2 JP 4843498 B2 JP4843498 B2 JP 4843498B2 JP 2006539779 A JP2006539779 A JP 2006539779A JP 2006539779 A JP2006539779 A JP 2006539779A JP 4843498 B2 JP4843498 B2 JP 4843498B2
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gate electrode
recess
polysilicon
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JP2007511909A (ja
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ドリス、ブルース、ビー
ベリャンスキー、マイケル、ピー
ボイド、ダイアン、シー
チダンバラオ、デュレセティ
グラシェンコフ、オレグ
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International Business Machines Corp
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Description

本発明は、ｎ型ＦＥＴおよびｐ型ＦＥＴの双方を含むＣＭＯＳデバイス構造等の半導体デバイス構造に関する。
例えばＣＭＯＳデバイス技術のような将来の半導体にとって、移動度の向上は重要である。従来のプロセス技術からの性能改善は、達成することが極めて困難になっている。Ｓｉチャネルに応力を印加するための方法には、チャネルの下部から応力を印加するＳｉＧｅを用いること、様々な側面から応力を印加する異なる浅いトレンチ分離（ＳＴＩ：shallow trench isolation）材料の選択、および、側面から長手方向の応力を印加するＳｉＮエッチ・ストップ層が含まれる。歪みＳｉキャップ層（stained Si cap layer）を用いたＳｉＧｅバッファ層または注入−アニール−バッファ手法の欠点は、周知である。その欠点には、歩留まりに大きな影響を与える転位、および、Ａｓ拡散の向上を制御することが極めて困難であることが含まれる。更に、このプロセスは、非常に複雑でコストが高い。ＳＴＩ手法は、それよりもコストが低いが、ゲートに対して自己整合（self-aligned）せず、ＲＸサイズに関して敏感である。窒化物エッチ・ストップ層を用いて応力を生成するというコストの低い手法は、ある程度の利点があるが、その利点は比較的瑣末なものと考えられている。
本発明は、チャネル移動度の向上を利用してデバイスの性能を改善する。本発明は、適正に調整したポリシリコン・ゲート・スタックの応力特性を用いることによって、チャネルの上部から移動度を改善する。本発明より以前には、これらの応力特性を制御することは極めて困難であった。しかしながら、本発明が含む方法および構造は、細粒ポリシリコンを用いて応力特性を制御する。本発明は、ｐ型ＦＥＴに圧縮応力を印加し、ｎ型ＦＥＴチャネルに引張り応力を印加する方法および構造を提供する。他の実施形態は、ｎ型ＦＥＴチャネルに圧縮応力が印加されることを防ぎつつ、ｐ型ＦＥＴチャネルに圧縮応力を印加することを含む。本発明の別の実施形態は、ｐ型ＦＥＴチャネルに引張り応力が印加されることを防ぎつつ、ｎ型ＦＥＴチャネルに引張り応力を印加することを含む。
本発明の方法は、ゲート電極スタックにおいて細粒ポリシリコン膜を配置（例えば蒸着）し、この膜はアニーリングの結果として伸張性が高くなる。伸張性膜の応力は、ポリシリコン膜の上に配置した堆積ＳｉＮ膜を低温でアニーリングすることによって、抑えることができる。
本発明の主な目的は、半導体デバイスにおいてチャネル移動度を向上させることである。
本発明によれば、半導体デバイス構造を製造する方法は、基板を設けるステップと、基板上に電極を設けるステップと、電極内に開口を有するくぼみを形成するステップと、くぼみ内に細粒半導体材料を配置するステップと、開口を覆ってくぼみ内に細粒半導体材料を閉じこめるステップと、上述のステップの結果として得られる構造をアニーリングするステップと、を含む。また、本発明は、半導体デバイス構造も提供する。
本発明の更に別の目的は、以下の詳細な記載を、添付図面と関連付けて考慮することによって、よりいっそう容易に明らかになろう。
ここで図面、特に図１を参照すると、半導体基板1が設けられている。半導体基板は、バルクＳｉ基板、ＳＯＩ基板、または応力を印加した（歪み）Ｓｉ基板である。あるいは、基板は、２つ以上の表面方位を含むハイブリッド基板である。あるいは、基板は、Ｇｅまたは、ＩＩＩ−Ｖ族元素またはＩＩ−ＶI族元素のいずれかの組み合わせ等、Ｓｉ以外の半導体材料を含む。
初期基板洗浄手順（従来のもの）を行った後、分離方法を実行する。半導体製造において周知のように、分離方法を用いて、選択したデバイスを電気的に相互に絶縁する。分離方法は、標準的な、または変更を加えた浅いトレンチ分離（ＳＴＩ）方法とすることができる。図１にＳＴＩ２を示す。あるいは、分離は、半導体デバイスを製造する当技術分野において周知のように、ＬＯＣＯＳプロセスまたはメサ分離方式を用いて達成する。半導体デバイスを製造するための様々な公知または従来のプロセスについては、VLSI Technology, 2nd Edition、S. M. Sze（McGraw HillPublishing Co.、１９８８年）を参照のこと。
分離２を形成した後、従来のゲート酸化物前洗浄プロセスを実行する。高性能論理回路製造プロセスの場合と同様に、様々な従来のゲート酸化物プロセスを用いて、異なるゲート酸化物厚を有するデバイスを製造することができる。例えば、従来の熱酸化プロセスを用いて、ゲート酸化物３を形成する。酸化物３は、Ｎ2Ｏ、ＮＯ、Ｏ2、またはそれらのいずれかの組み合わせを用いて形成する。従来のプラズマ・プロセスを用いて、酸化物を窒化させることができる。あるいは、ゲート酸化物を形成するには、ベース酸化物を用い、その後に、酸化アルミニウム、または酸化ハフニウム等の高ｋ誘電体、または別の高ｋゲート誘電体を堆積すれば良い。ゲート誘電体材料３は、約（±１０％）０．６ｎｍから約７ｎｍの範囲内で、ほぼ（±１０％）均一な厚さを有する。
次に、ウエハ構造１、２、３の全体を覆うように、膜４を堆積する。膜４は、可処分（除去可能）または半可処分のゲート電極材料として用いる。好適な実施形態では、膜４は、約８０ｎｍから約１５０ｎｍの範囲内でほぼ均一な厚さまたは高さ（Ｔ）を有するポリシリコン（ポリＳｉ）材料を含む。低圧気相化学付着（ＬＰＣＶＤ：low pressure chemical vapor deposition）または急速熱化学気相付着（ＲＰＣＶＤ：rapid thermal chemical vapor deposition）等の堆積技法を用いて、除去可能ゲート電極材料４を堆積する。図１に、結果として得られる構造を示す。ポリＳｉ層４は、好ましくは、約１ｎｍから約４０ｎｍの範囲の標準的な粒径を有する。
次に、従来のリソグラフィ・プロセスを用いて、除去可能ゲート電極材料４の上に、フォトレジスト画像をパターニングする。図には示さないが、フォトレジスト画像を用いて、従来のドライ・エッチング・プロセスを利用することによって、除去可能ゲート電極材料４内に所望の構造体を転写する。ドライ・エッチング・プロセスは、ゲート酸化物材料３に対して選択的に除去可能ゲート電極材料４をエッチングすることができるいくつかの化学成分を含む。図２に示す構造は、ｎ型ＦＥＴゲート・スタック３、５のための完全にパターニングした除去可能ゲート電極５、および、ｐ型ＦＥＴゲート・スタック３、６のための除去可能ゲート電極６を示す。
次いで、図には示さないが、高性能論理回路製造プロセスにおいて一般的に行われるように、従来のゲート再酸化プロセスを用いる。再酸化は、熱酸化プロセスを用いて約１ｎｍから約７ｎｍのほぼ均一な厚さを達成することで形成する。再酸化プロセスの後に、従来のフォトリソグラフィ・プロセスを用いて、ｐ型ＦＥＴ領域を覆うように、ブロック・マスクをパターニングする。ブロック（例えばレジスト）マスク（図には示さない）を用いて、適切なｎ型ＦＥＴ領域を注入している間にｐ型ＦＥＴ領域が注入されるのを阻止または防ぐ。ｎ型ＦＥＴ拡張部７およびハロ（図示せず）は、それぞれ低エネルギＡｓおよびＢの注入を用いて注入される。次いで、ドライまたはウエット・エッチングを用いて、レジスト・マスクを除去する。ｎ型ＦＥＴ領域を覆うように、別のブロック・マスク（図示せず）をパターニングする。ｐ型ＦＥＴ拡張部８およびハロ（図示せず）を、それぞれ低エネルギＢＦ2またはＢの注入およびＡｓの注入を用いて注入する。図２に、ｎ型ＦＥＴおよびｐ型ＦＥＴのための拡張注入プロファイル７、８を示す。
拡張部およびハロを注入した後、ウエハ構造全体を覆うように、誘電体ライナ層９を形成する（図３）。ライナ層９として用いる誘電膜は、好ましくは、ＣＶＤもしくはＲＴＣＶＤまたは他のいずれかの適切な堆積技法によって堆積されるＳｉＮである。ライナ層９の目的は、次のプロセスのためのＣＭＰストップ層を設けることである。更に、ＳｉＮライナ９は、プロセス・フローの後の時点でエッチングして、ソース−ドレイン・スペーサを形成する。図３に、結果として得られる構造を示す。
プロセス・フローの次のステップは、酸化物膜１０を堆積することである。酸化物膜１０を堆積し、化学機械研磨（ＣＭＰ：chemical mechanical polishing）を用いて平坦化する。膜１０は、例えば、高密度プラズマ（ＨＤＰ：high density plasma）プロセスを用いて堆積する。除去可能ゲート電極５の上のライナ９の上部は、ドライ・エッチング・プロセスを用いて除去する。このプロセスは、窒化シリコンをエッチングすることができるが、酸化物またはポリＳｉの相当量をエッチングしない。図４に、ライナ層９の上部を除去した後の、平坦化した酸化物膜１０およびＳｉＮライナ９構造を示す。
本発明の重要な態様は、本発明のプロセス・フローのこの時点で、ゲート・リセス・プロセスを用いて、ゲート電極５、６から、完全にまたは部分的に、ポリＳｉを除去することである。図５に、ポリＳｉを部分的に除去する好適な実施形態を示す。いずれかの適切なドライまたはウエット・エッチング・プロセスを用いて、ポリＳｉにくぼみを形成する（recessed）。最初のポリＳｉの部分１２および部分１３は、残ったままであり、約１ｎｍから約２０ｎｍの範囲内でほぼ均一な厚さを有する。図５に、ｎ型ＦＥＴゲート電極のリセス部分１２およびｐ型ＦＥＴゲート電極のリセス部分１３を示す。別の実施形態（図示せず）では、ポリＳｉを完全に除去する。この実施形態を用いる場合、従来のゲート酸化物前洗浄プロセスを行い、その後に従来のゲート酸化プロセスを実行する。
本発明の別の重要な態様は、ゲート・リセス・プロセスの後に、ウエハ全体を覆うように、細粒ポリＳｉを堆積することである。細粒ポリシリコンは、Shimizu, S等のProceedings ofthe 1997 Symposium on VLSI Technology（京都（日本）、１９９７年６月１０〜１２日）、および、Silicon Processing for The VLSI Era, Vol 1 Process Technology、S. Wolf（１９９９年）から公知である。好ましくは、粒構造は、約１ｎｍから約５０ｎｍの範囲内である。より好ましい粒径は、約５ｎｍから３０ｎｍの範囲の実質的に等しい大きさである。ポリＳｉは、ＲＴＣＶＤまたはＬＰＣＶＤによって堆積する。次に、例えばＣＭＰまたはドライ・エッチングを用いて、酸化物層１０の上から、ポリＳｉを平坦化し、くぼませる。ＣＭＰおよびドライ・エッチング・プロセスは、双方とも、ＳｉＯ2層１０に対して選択的にポリＳｉを除去することができる。図６に、ＣＭＰおよびドライ・エッチングの後の、ｎ型ＦＥＴのための本発明のゲート電極構造１７、１２、および、ｐ型ＦＥＴのための本発明のゲート電極構造１３、１８を示す。
本発明の方法のこの時点で、ｎ型ＦＥＴ領域を覆うように、図７に示すハード・マスク１５をパターニングする。マスク１５は、ＳｉＮを含む誘電膜および従来のフォトリソグラフィ手順を用いてパターニングする。約３５０℃から約７００℃の範囲の温度で、プラズマ・エンハンス化学気相付着等の低温堆積プロセスを用いて、ハード・マスク１５を堆積する。好ましくは、５５０度以下の温度で、ハード・マスク１５を形成する材料を堆積して、ポリＳｉ粒の再成長を防ぐ。次に、構造全体を、約５００℃から約６００℃の温度を用いて約１時間アニーリングする。あるいは、約７００℃から約１０００度で約１秒から約７秒間の熱アニーリングを実行しても良い。別の実施形態では、構造１２、１４は、プロセスのもっと後の時点でアニーリングを行う。ｎ型ＦＥＴゲート電極部１７では、細粒ポリＳｉは、好ましくは約５ｎｍから約３０ｎｍの範囲で小さいままである。なぜなら、ＳｉＮキャップ層１５が存在するからである。しかしながら、ｐ型ＦＥＴゲート電極部１８の粒は、約３０ｎｍを超える粒径まで著しく成長する。
本発明者等は、本発明のプロセス（例えば図７に関して）が、従来のプロセス技術からの大きな転換を示すと考える。細粒ポリＳｉが標準的な熱量を受ける場合、ポリＳｉ粒の成長によって引張り応力が著しく増大する。引張り応力は、チャネル領域において圧縮応力を生成し、これが電子移動度を劣化させ、ｎ型ＦＥＴの性能を制限する。図１０のシミュレーションを参照のこと。本発明者等は、粒の成長およびその結果としての引張り応力の顕著な増大は、ｎ型ＦＥＴ領域を覆うように配置したＳｉＮハード・マスク１５を用いたアニーリングによってほぼ完全に排除されると考える。細粒ポリＳｉをくぼみ内に堆積し、ｎ型ＦＥＴをＳｉＮハード・マスクを用いてアニーリングすることによって、各デバイスごとに別個に粒構造を最適化することができる。このステップは、ｎ型ＦＥＴデバイス性能を著しく向上させる結果となると思われる。
本発明のプロセスの次のステップは、酸化物膜１０の水平部分全体から、または水平部分全体から（図８に示すように、部分１７上を除いて）、Ｓｉハード・マスク１５を除去することである。ポリＳｉは前述のようにくぼませているので、図８に示すように、ハード・マスク１５の部分１９は、くぼみ孔内に残ったままである（配置されている）。構造１９の目的は、標準的な最新の半導体製造プロセス技術において一般的に行われる、この後の従来の熱サイクルの間に、粒の成長を防ぐことである。ＳｉＮをエッチングした後、ＳｉＮおよびポリＳｉ材料に対して選択的にＳｉＯ2膜を除去することができる適切なドライまたはウエット・エッチング・プロセスを用いて、酸化物膜１０を除去する。次に、方向性ドライ・エッチング・プロセスをライナ層９に行って、図８に示すように、スペーサ２０、２５を形成する。本発明に必須ではないが、ｐ型ＦＥＴのスペーサ２０およびｎ型ＦＥＴのスペーサ２５は、図示のように異なる高さを有する場合がある。ｎ型ＦＥＴおよびｐ型ＦＥＴ拡張領域７、８を形成するのに用いたものと同様のブロック・マスクおよび注入プロセスを用いて、図８に示すように、ｎ型ＦＥＴソース−ドレイン領域２１およびｐ型ＦＥＴソース−ドレイン領域２２を形成する。次に、急速熱アニーリングを用いて、接合を活性化する。ｎ型ＦＥＴにはＳｉＮ層１９が存在し続けるので、ｎ型ＦＥＴゲートにおける粒の成長は抑えられ、これによって、ゲート電極スタック３、１２、１７の張力、およびこのスタックの下のチャネル領域における以降の圧縮は、最小限に抑えられる。
次に、ウエットまたはドライ・エッチング・プロセスを用いて、ゲート電極スタックの上の残り部分１９を除去する。次に、シリサイド前洗浄プロセスを実行し、その後に従来のシリサイド・プロセスを行う。図９およびシリサイド２３を参照のこと。標準的な後半の（back-end-of-line）処理を行う。この処理には、前金属誘電体堆積および平坦化、コンタクト・エッチング、コンタクト・ライナ形成およびコンタクト形成が含まれる。その後に、金属配線および最終チップ形成を行う。これらは全て図示しない。
シミュレーションの結果によって、キャップのないポリＳｉにおける引張り応力のレベルは、約６００℃の温度で約１時間アニーリングを行った結果、約６００ＭＰａから約１２００ＭＰａ増大するが、キャップを有するポリＳｉでは、引張り応力の増大は約１０ＭＰａのみであることが示される。我々のシミュレーション結果は、ゲート材料における応力の約３３％から約５０％（ゲート応力に対して逆の符号を有する）は、チャネル領域内に移すことができることを示す。このため、キャップなしのゲート・スタックは、−２００ＭＰａから−３００ＭＰａを印加するが、キャップありのゲート・スタックは、チャネル領域にほとんどまたは全く応力が移らない。図１０のグラフに、応力曲線の１つのシミュレーションを示す。
現時点で本発明の好適な実施形態と考えられるものを図示し説明したが、本発明の精神および範囲から逸脱することなく、様々な変更および変形を実施可能であることは、当業者には明らかであろう。本発明の精神および範囲は、特許請求の範囲によってのみ限定されるものとする。
本発明の好適な実施形態によるプロセス・ステップの側面概略図である。 本発明の好適な実施形態によるプロセス・ステップの側面概略図である。 本発明の好適な実施形態によるプロセス・ステップの側面概略図である。 本発明の好適な実施形態によるプロセス・ステップの側面概略図である。 本発明の好適な実施形態によるプロセス・ステップの側面概略図である。 本発明の好適な実施形態によるプロセス・ステップの側面概略図である。 本発明の好適な実施形態によるプロセス・ステップの側面概略図である。 本発明の好適な実施形態によるプロセス・ステップの側面概略図である。 本発明の好適な実施形態によるプロセス・ステップの側面概略図である。 本発明の好適な構造のゲートおよびチャネルにおける応力曲線のシミュレーションを示す図である。

Claims (7)

  1. 半導体デバイス構造を製造する方法であって、
    基板を設けるステップと、
    前記基板上のｎ型ＦＥＴおよびｐ型ＦＥＴを形成する領域上に、それぞれ、パターニングされた第１のゲート電極および第２のゲート電極を形成するステップと、
    前記第１のゲート電極および第２のゲート電極の周囲に絶縁膜を形成し、該絶縁膜を平坦化することにより、前記第１のゲート電極および第２のゲート電極の上面を露出するステップと、
    前記露出した第１のゲート電極および第２のゲート電極を、一部、または、全部分をエッチング除去して、それぞれ、第１のくぼみおよび第２のくぼみを形成するステップと、
    前記第１のくぼみおよび第２のくぼみを、細粒ポリシリコンによって埋め込み、前記エッチング除去された第１のゲート電極および第２のゲート電極の領域を細粒ポリシリコンによって置換するステップと、
    前記第１のくぼみ内に形成されたｎ型ＦＥＴの前記細粒ポリシリコンの上面を覆うようにＳｉＮ膜を形成し、次いで前記ｎ型ＦＥＴおよび前記ｐ型ＦＥＴの前記細粒ポリシリコンを加熱して、前記ｐ型ＦＥＴの前記細粒ポリシリコンのポリシリコン粒を成長させるとともに、前記ｎ型ＦＥＴの前記細粒ポリシリコンのポリシリコン粒の再成長を防止して、前記ｎ型ＦＥＴの前記ポリシリコン粒の平均直径が前記ｐ型ＦＥＴの前記ポリシリコン粒の平均直径未満になるようにする、ステップと、を含み、
    前記ｐ型ＦＥＴには、前記ポリシリコン粒の再成長により、チャネル領域に圧縮応力を印加する方法。
  2. 前記加熱するステップが、５００℃から６００℃の範囲内の温度で１時間、前記ｎ型ＦＥＴおよび前記ｐ型ＦＥＴを加熱することを含む、請求項１に記載の方法。
  3. 前記細粒ポリシリコンが５ｎｍから３０ｎｍの範囲の平均粒径を有する、請求項１に記載の方法。
  4. 前記置換するステップが、前記第１のゲート電極および第２のゲート電極の前記一部を除去して、前記第１のくぼみおよび第２のくぼみを形成し、次いで前記第１のくぼみおよび第２のくぼみ内に前記細粒ポリシリコンを配置することを含む、請求項１に記載の方法。
  5. 前記置換するステップが、前記第１のゲート電極および第２のゲート電極の全部分を除去して、前記第１のくぼみおよび第２のくぼみを形成し、次いで前記第１のくぼみおよび第２のくぼみ内に前記細粒ポリシリコンを堆積することを含む、請求項１に記載の方法。
  6. 前記第１のゲート電極および第２のゲート電極の側面にスペーサを形成するステップを更に含み、前記第１のゲート電極の側面に設けられたスペーサと前記第２のゲート電極の側面に設けられたスペーサとが異なる高さを有する、請求項１に記載の方法。
  7. 前記第１のゲート電極および第２のゲート電極の側面にスペーサを設けるステップを更に含み、前記第２のゲート電極の側面に設けられたスペーサの高さが、前記第１のゲート電極の側面に設けられたスペーサの高さ未満である、請求項１に記載の方法。
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