DE602006019167D1 - Photovoltaische Vorrichtung und Herstellungsverfahren dazu - Google Patents

Photovoltaische Vorrichtung und Herstellungsverfahren dazu

Info

Publication number
DE602006019167D1
DE602006019167D1 DE602006019167T DE602006019167T DE602006019167D1 DE 602006019167 D1 DE602006019167 D1 DE 602006019167D1 DE 602006019167 T DE602006019167 T DE 602006019167T DE 602006019167 T DE602006019167 T DE 602006019167T DE 602006019167 D1 DE602006019167 D1 DE 602006019167D1
Authority
DE
Germany
Prior art keywords
crystal substrate
laser irradiation
underlying
processing
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006019167T
Other languages
English (en)
Inventor
Toshio Asaumi
Toshiaki Baba
Akira Terakawa
Yasufumi Tsunomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2005100446A external-priority patent/JP4703234B2/ja
Priority claimed from JP2006036005A external-priority patent/JP4439477B2/ja
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of DE602006019167D1 publication Critical patent/DE602006019167D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H01L31/035245—Superlattices; Multiple quantum well structures characterised by amorphous semiconductor layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Sustainable Energy (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
DE602006019167T 2005-03-29 2006-03-29 Photovoltaische Vorrichtung und Herstellungsverfahren dazu Active DE602006019167D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005094640 2005-03-29
JP2005100446A JP4703234B2 (ja) 2005-03-31 2005-03-31 光起電力装置及びその製造方法
JP2006036005A JP4439477B2 (ja) 2005-03-29 2006-02-14 光起電力素子及びその製造方法

Publications (1)

Publication Number Publication Date
DE602006019167D1 true DE602006019167D1 (de) 2011-02-10

Family

ID=36616940

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006019167T Active DE602006019167D1 (de) 2005-03-29 2006-03-29 Photovoltaische Vorrichtung und Herstellungsverfahren dazu

Country Status (4)

Country Link
US (1) US7755157B2 (de)
EP (1) EP1708282B1 (de)
AT (1) ATE493764T1 (de)
DE (1) DE602006019167D1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008135654A (ja) * 2006-11-29 2008-06-12 Sanyo Electric Co Ltd 太陽電池モジュール
JP2008235521A (ja) 2007-03-20 2008-10-02 Sanyo Electric Co Ltd 半導体基板の割断方法及び太陽電池の割断方法並びに太陽電池
JP5142565B2 (ja) * 2007-03-20 2013-02-13 三洋電機株式会社 太陽電池の製造方法
JP2009200095A (ja) * 2008-02-19 2009-09-03 Tokyo Electron Ltd 薄膜およびその薄膜を用いた半導体装置の製造方法
US7858427B2 (en) * 2009-03-03 2010-12-28 Applied Materials, Inc. Crystalline silicon solar cells on low purity substrate
WO2012050186A1 (ja) * 2010-10-14 2012-04-19 株式会社カネカ 結晶シリコン系太陽電池の製造方法
US10043934B2 (en) * 2011-06-08 2018-08-07 International Business Machines Corporation Silicon-containing heterojunction photovoltaic element and device
JP5425349B1 (ja) 2012-04-25 2014-02-26 株式会社カネカ 太陽電池およびその製造方法、ならびに太陽電池モジュール
JP5492354B1 (ja) * 2012-10-02 2014-05-14 株式会社カネカ 結晶シリコン太陽電池の製造方法、太陽電池モジュールの製造方法、結晶シリコン太陽電池並びに太陽電池モジュール
JP5759639B2 (ja) 2013-05-29 2015-08-05 株式会社カネカ 太陽電池およびその製造方法、ならびに太陽電池モジュールおよびその製造方法
WO2014192408A1 (ja) 2013-05-29 2014-12-04 株式会社カネカ 結晶シリコン系太陽電池の製造方法、および結晶シリコン系太陽電池モジュールの製造方法
JP6491602B2 (ja) 2013-10-30 2019-03-27 株式会社カネカ 太陽電池の製造方法、および太陽電池モジュールの製造方法
TW201526252A (zh) * 2013-12-25 2015-07-01 Neo Solar Power Corp 太陽能電池及其製造方法
EP3518126B1 (de) * 2014-05-27 2022-11-02 Maxeon Solar Pte. Ltd. Schindelförmiges solarzellenmodul
JP6592447B2 (ja) 2014-10-06 2019-10-16 株式会社カネカ 太陽電池および太陽電池モジュール、ならびに太陽電池および太陽電池モジュールの製造方法
DE102018123484A1 (de) * 2018-09-24 2020-03-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Vereinzeln eines Halbleiterbauelementes mit einem pn-Übergang und Halbleiterbauelement mit einem pn-Übergang
CN110480161A (zh) * 2019-07-04 2019-11-22 大族激光科技产业集团股份有限公司 晶片的切割方法及装置
CN113380926B (zh) * 2021-06-11 2023-02-10 安徽华晟新能源科技有限公司 异质结太阳能电池片的制造方法及异质结太阳能电池片
FR3136113A1 (fr) * 2022-05-31 2023-12-01 Commissariat à l'Energie Atomique et aux Energies Alternatives système et procédé de fabrication d’un élément de cellule photovoltaïque

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4697041A (en) * 1985-02-15 1987-09-29 Teijin Limited Integrated solar cells
JP3623520B2 (ja) * 1992-11-17 2005-02-23 株式会社カネカ 薄膜太陽電池の製法
JPH07106619A (ja) 1993-10-07 1995-04-21 Sanyo Electric Co Ltd 太陽電池の製造方法
AUPO638997A0 (en) * 1997-04-23 1997-05-22 Unisearch Limited Metal contact scheme using selective silicon growth
JP2001274441A (ja) 2000-03-23 2001-10-05 Mitsubishi Heavy Ind Ltd 太陽電池パネルの一括切断処理方法
JP3490964B2 (ja) * 2000-09-05 2004-01-26 三洋電機株式会社 光起電力装置
US6566159B2 (en) * 2000-10-04 2003-05-20 Kaneka Corporation Method of manufacturing tandem thin-film solar cell
JP4171428B2 (ja) * 2003-03-20 2008-10-22 三洋電機株式会社 光起電力装置

Also Published As

Publication number Publication date
ATE493764T1 (de) 2011-01-15
US7755157B2 (en) 2010-07-13
US20060219292A1 (en) 2006-10-05
EP1708282A1 (de) 2006-10-04
EP1708282B1 (de) 2010-12-29

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