NO20070626L - Fremgangsmåte ved produksjon av lateral halvlederanordning - Google Patents
Fremgangsmåte ved produksjon av lateral halvlederanordningInfo
- Publication number
- NO20070626L NO20070626L NO20070626A NO20070626A NO20070626L NO 20070626 L NO20070626 L NO 20070626L NO 20070626 A NO20070626 A NO 20070626A NO 20070626 A NO20070626 A NO 20070626A NO 20070626 L NO20070626 L NO 20070626L
- Authority
- NO
- Norway
- Prior art keywords
- semiconductor device
- semiconductor material
- manufacturing
- layer
- polarity
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 abstract 3
- 239000002800 charge carrier Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
- H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Recrystallisation Techniques (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0417738A GB2417126A (en) | 2004-08-09 | 2004-08-09 | Method for fabricating lateral semiconductor device |
| PCT/GB2005/003021 WO2006016118A1 (en) | 2004-08-09 | 2005-08-02 | Method for fabricating lateral semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO20070626L true NO20070626L (no) | 2007-05-09 |
Family
ID=32982774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20070626A NO20070626L (no) | 2004-08-09 | 2007-02-02 | Fremgangsmåte ved produksjon av lateral halvlederanordning |
Country Status (15)
| Country | Link |
|---|---|
| US (1) | US7589347B2 (no) |
| EP (1) | EP1776743B1 (no) |
| JP (1) | JP4794558B2 (no) |
| KR (1) | KR20070041780A (no) |
| CN (1) | CN100511884C (no) |
| AT (1) | ATE433216T1 (no) |
| CA (1) | CA2574591A1 (no) |
| DE (1) | DE602005014781D1 (no) |
| ES (1) | ES2328162T3 (no) |
| GB (2) | GB2417126A (no) |
| HK (1) | HK1107727A1 (no) |
| MY (1) | MY136199A (no) |
| NO (1) | NO20070626L (no) |
| TW (1) | TWI397228B (no) |
| WO (1) | WO2006016118A1 (no) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2417126A (en) * | 2004-08-09 | 2006-02-15 | Qinetiq Ltd | Method for fabricating lateral semiconductor device |
| US9396941B2 (en) * | 2010-09-17 | 2016-07-19 | The United States Of America, As Represented By The Secretary Of The Navy | Method for vertical and lateral control of III-N polarity |
| US8994123B2 (en) | 2011-08-22 | 2015-03-31 | Gold Standard Simulations Ltd. | Variation resistant metal-oxide-semiconductor field effect transistor (MOSFET) |
| US9373684B2 (en) | 2012-03-20 | 2016-06-21 | Semiwise Limited | Method of manufacturing variation resistant metal-oxide-semiconductor field effect transistor (MOSFET) |
| US9190485B2 (en) | 2012-07-28 | 2015-11-17 | Gold Standard Simulations Ltd. | Fluctuation resistant FDSOI transistor with implanted subchannel |
| US9269804B2 (en) | 2012-07-28 | 2016-02-23 | Semiwise Limited | Gate recessed FDSOI transistor with sandwich of active and etch control layers |
| US9263568B2 (en) | 2012-07-28 | 2016-02-16 | Semiwise Limited | Fluctuation resistant low access resistance fully depleted SOI transistor with improved channel thickness control and reduced access resistance |
| CN103078018A (zh) * | 2013-01-30 | 2013-05-01 | 武汉迪源光电科技有限公司 | 一种led外延结构 |
| US9576862B2 (en) * | 2013-03-15 | 2017-02-21 | Rudolph Technologies, Inc. | Optical acoustic substrate assessment system and method |
| US9012276B2 (en) | 2013-07-05 | 2015-04-21 | Gold Standard Simulations Ltd. | Variation resistant MOSFETs with superior epitaxial properties |
| JP6103241B2 (ja) * | 2013-11-20 | 2017-03-29 | ソニー株式会社 | 発光素子 |
| CN104269739B (zh) * | 2014-10-20 | 2017-03-22 | 中国电子科技集团公司第四十四研究所 | 一种低成本大功率半导体基横模激光器芯片结构 |
| JP6283324B2 (ja) * | 2015-03-05 | 2018-02-21 | 旭化成エレクトロニクス株式会社 | 赤外線発光素子 |
| US11049939B2 (en) | 2015-08-03 | 2021-06-29 | Semiwise Limited | Reduced local threshold voltage variation MOSFET using multiple layers of epi for improved device operation |
| US10014373B2 (en) | 2015-10-08 | 2018-07-03 | International Business Machines Corporation | Fabrication of semiconductor junctions |
| DE102017101877B4 (de) * | 2017-01-31 | 2022-02-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Einzelphotonenquelle, Verfahren zur Herstellung einer Einzelphotonenquelle und Methode zur kontrollierten Erzeugung von Photonen |
| US11373696B1 (en) | 2021-02-19 | 2022-06-28 | Nif/T, Llc | FFT-dram |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5004698A (en) * | 1985-12-05 | 1991-04-02 | Santa Barbara Research Center | Method of making photodetector with P layer covered by N layer |
| US4855255A (en) * | 1988-03-23 | 1989-08-08 | Massachusetts Institute Of Technology | Tapered laser or waveguide optoelectronic method |
| JPH07335550A (ja) * | 1994-06-14 | 1995-12-22 | Oki Electric Ind Co Ltd | 化合物半導体薄膜の横方向ｐ−ｉ−ｎ接合形成方法 |
| JP2865000B2 (ja) * | 1994-10-27 | 1999-03-08 | 日本電気株式会社 | 出力導波路集積半導体レーザとその製造方法 |
| JP2955986B2 (ja) * | 1996-05-22 | 1999-10-04 | 日本電気株式会社 | 半導体光変調器及びその製造方法 |
| US6052397A (en) * | 1997-12-05 | 2000-04-18 | Sdl, Inc. | Laser diode device having a substantially circular light output beam and a method of forming a tapered section in a semiconductor device to provide for a reproducible mode profile of the output beam |
| SE9802909L (sv) | 1998-08-31 | 1999-10-13 | Abb Research Ltd | Metod för framställning av en pn-övergång för en halvledaranordning av SiC samt en halvledaranordning av SiC med pn-övergång |
| GB2354368B (en) * | 1999-09-14 | 2001-12-05 | Toshiba Res Europ Ltd | A photon source |
| DE10039433B4 (de) * | 2000-08-11 | 2017-10-26 | Osram Opto Semiconductors Gmbh | Halbleiterchip für die Optoelektronik |
| US7132676B2 (en) * | 2001-05-15 | 2006-11-07 | Kabushiki Kaisha Toshiba | Photon source and a method of operating a photon source |
| US6831309B2 (en) * | 2002-12-18 | 2004-12-14 | Agilent Technologies, Inc. | Unipolar photodiode having a schottky junction contact |
| GB2417126A (en) * | 2004-08-09 | 2006-02-15 | Qinetiq Ltd | Method for fabricating lateral semiconductor device |
-
2004
- 2004-08-09 GB GB0417738A patent/GB2417126A/en not_active Withdrawn
-
2005
- 2005-08-02 AT AT05767597T patent/ATE433216T1/de not_active IP Right Cessation
- 2005-08-02 KR KR1020077005461A patent/KR20070041780A/ko not_active Application Discontinuation
- 2005-08-02 GB GB0515863A patent/GB2417133B/en not_active Expired - Fee Related
- 2005-08-02 US US11/632,934 patent/US7589347B2/en not_active Expired - Fee Related
- 2005-08-02 CA CA002574591A patent/CA2574591A1/en not_active Abandoned
- 2005-08-02 DE DE602005014781T patent/DE602005014781D1/de active Active
- 2005-08-02 JP JP2007525336A patent/JP4794558B2/ja not_active Expired - Fee Related
- 2005-08-02 CN CNB2005800269623A patent/CN100511884C/zh not_active Expired - Fee Related
- 2005-08-02 EP EP05767597A patent/EP1776743B1/en not_active Not-in-force
- 2005-08-02 WO PCT/GB2005/003021 patent/WO2006016118A1/en active Application Filing
- 2005-08-02 ES ES05767597T patent/ES2328162T3/es active Active
- 2005-08-03 TW TW094126330A patent/TWI397228B/zh not_active IP Right Cessation
- 2005-08-04 MY MYPI20053635A patent/MY136199A/en unknown
-
2007
- 2007-02-02 NO NO20070626A patent/NO20070626L/no not_active Application Discontinuation
- 2007-12-06 HK HK07113367.1A patent/HK1107727A1/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| GB2417133B (en) | 2006-08-23 |
| MY136199A (en) | 2008-08-29 |
| HK1107727A1 (en) | 2008-04-11 |
| TWI397228B (zh) | 2013-05-21 |
| CN101002370A (zh) | 2007-07-18 |
| GB2417126A (en) | 2006-02-15 |
| KR20070041780A (ko) | 2007-04-19 |
| CA2574591A1 (en) | 2006-02-16 |
| ATE433216T1 (de) | 2009-06-15 |
| US20080087876A1 (en) | 2008-04-17 |
| CN100511884C (zh) | 2009-07-08 |
| GB2417133A (en) | 2006-02-15 |
| EP1776743B1 (en) | 2009-06-03 |
| ES2328162T3 (es) | 2009-11-10 |
| US7589347B2 (en) | 2009-09-15 |
| JP4794558B2 (ja) | 2011-10-19 |
| GB0417738D0 (en) | 2004-09-08 |
| WO2006016118A1 (en) | 2006-02-16 |
| GB0515863D0 (en) | 2005-09-07 |
| DE602005014781D1 (de) | 2009-07-16 |
| TW200625742A (en) | 2006-07-16 |
| EP1776743A1 (en) | 2007-04-25 |
| JP2008509570A (ja) | 2008-03-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FC2A | Withdrawal, rejection or dismissal of laid open patent application |