JP2009135473A5 - - Google Patents

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Publication number
JP2009135473A5
JP2009135473A5 JP2008280835A JP2008280835A JP2009135473A5 JP 2009135473 A5 JP2009135473 A5 JP 2009135473A5 JP 2008280835 A JP2008280835 A JP 2008280835A JP 2008280835 A JP2008280835 A JP 2008280835A JP 2009135473 A5 JP2009135473 A5 JP 2009135473A5
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JP
Japan
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semiconductor layer
single crystal
conductivity type
forming
layer
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JP2008280835A
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JP5352190B2 (ja
JP2009135473A (ja
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Priority to JP2008280835A priority Critical patent/JP5352190B2/ja
Priority claimed from JP2008280835A external-priority patent/JP5352190B2/ja
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Publication of JP2009135473A5 publication Critical patent/JP2009135473A5/ja
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Claims (1)

  1. 水素イオンであって質量が水素分子よりも重いクラスターイオンを前記水素イオン種の質量の総量の７０％以上含むイオンビームを単結晶半導体基板の一面から照射し、
    該単結晶半導体基板の表面から所定の深さに損傷層を形成し、
    前記単結晶半導体基板の前記クラスターイオンの照射面側に、少なくとも一導電型の第１不純物半導体層、該一導電型の第１不純物半導体層に接する第１電極、及び該第１電極上の接合層を形成し、
    絶縁表面を有する支持基板の一面に、前記単結晶半導体基板の前記接合層を密接させて設け、
    熱処理を行うことにより、前記損傷層に亀裂を生じさせ、前記支持基板上に単結晶半導体層を残存させたまま前記単結晶半導体基板を分離して除去し、
    前記単結晶半導体層の分離により露出した面側に、一導電型とは逆の導電型の第２不純物半導体層を形成し、
    半導体材料ガスを含む反応性ガスを電磁エネルギーにより分解して、前記第２不純物半導体層に接して、一導電型の第３不純物半導体層を形成し、前記第３不純物半導体層上に非単結晶半導体層を形成し、前記非単結晶半導体層上に一導電型とは逆の導電型の第４不純物半導体層を形成し、
    前記第４不純物半導体層上に第２電極を形成することを特徴とする光電変換装置の製造方法。
JP2008280835A 2007-11-09 2008-10-31 光電変換装置 Expired - Fee Related JP5352190B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008280835A JP5352190B2 (ja) 2007-11-09 2008-10-31 光電変換装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007292650 2007-11-09
JP2007292650 2007-11-09
JP2008280835A JP5352190B2 (ja) 2007-11-09 2008-10-31 光電変換装置

Publications (3)

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JP2009135473A JP2009135473A (ja) 2009-06-18
JP2009135473A5 true JP2009135473A5 (ja) 2011-12-08
JP5352190B2 JP5352190B2 (ja) 2013-11-27

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JP2008280835A Expired - Fee Related JP5352190B2 (ja) 2007-11-09 2008-10-31 光電変換装置

Country Status (4)

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US (1) US8394655B2 (ja)
JP (1) JP5352190B2 (ja)
KR (1) KR101608953B1 (ja)
WO (1) WO2009060808A1 (ja)

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