IN2013CN00291A - - Google Patents
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- Publication number
- IN2013CN00291A IN2013CN00291A IN291CHN2013A IN2013CN00291A IN 2013CN00291 A IN2013CN00291 A IN 2013CN00291A IN 291CHN2013 A IN291CHN2013 A IN 291CHN2013A IN 2013CN00291 A IN2013CN00291 A IN 2013CN00291A
- Authority
- IN
- India
- Prior art keywords
- electrical characteristics
- producing
- solar cell
- annealing
- reliability
- Prior art date
Links
- 238000000034 method Methods 0.000 abstract 3
- 238000000137 annealing Methods 0.000 abstract 2
- 230000003116 impacting effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010160394A JP5440433B2 (ja) | 2010-07-15 | 2010-07-15 | 太陽電池の製造方法及び製膜装置 |
| PCT/JP2011/065861 WO2012008436A1 (ja) | 2010-07-15 | 2011-07-12 | 太陽電池の製造方法及び製膜装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2013CN00291A true IN2013CN00291A (ja) | 2015-10-02 |
Family
ID=45469434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN291CHN2013 IN2013CN00291A (ja) | 2010-07-15 | 2011-07-12 |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US8859320B2 (ja) |
| EP (1) | EP2595197B1 (ja) |
| JP (1) | JP5440433B2 (ja) |
| KR (1) | KR101600588B1 (ja) |
| CN (1) | CN103155163B (ja) |
| AU (1) | AU2011277505B2 (ja) |
| ES (1) | ES2732356T3 (ja) |
| IN (1) | IN2013CN00291A (ja) |
| MY (1) | MY158973A (ja) |
| SG (1) | SG187069A1 (ja) |
| TW (1) | TWI641155B (ja) |
| WO (1) | WO2012008436A1 (ja) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6262229A (ja) * | 1985-09-13 | 1987-03-18 | Minolta Camera Co Ltd | 多分割測光装置を有するカメラ |
| EP2642524A3 (en) * | 2012-03-22 | 2014-07-16 | Samsung Electronics Co., Ltd | Solar cell |
| CN102945894A (zh) * | 2012-12-03 | 2013-02-27 | 天威新能源控股有限公司 | 一种晶体硅太阳能电池氧化铝钝化膜和背电极的制备方法 |
| JP2014154656A (ja) * | 2013-02-07 | 2014-08-25 | Dainippon Screen Mfg Co Ltd | 結晶シリコン型太陽電池、およびその製造方法 |
| CN103367544A (zh) * | 2013-07-08 | 2013-10-23 | 浙江晶科能源有限公司 | 一种具有吸杂作用的多晶硅电池发射极的扩散方法 |
| CN103456838A (zh) * | 2013-08-29 | 2013-12-18 | 东莞南玻光伏科技有限公司 | 太阳能电池钝化膜的制作方法及太阳能电池的制作方法 |
| CN103489934B (zh) * | 2013-09-25 | 2016-03-02 | 晶澳（扬州）太阳能科技有限公司 | 一种双面透光的局部铝背场太阳能电池及其制备方法 |
| KR101614190B1 (ko) * | 2013-12-24 | 2016-04-20 | 엘지전자 주식회사 | 태양전지 및 이의 제조 방법 |
| CN104051572A (zh) * | 2014-06-09 | 2014-09-17 | 山东力诺太阳能电力股份有限公司 | 一种氮化硅薄膜的高温退火方法 |
| CN104051570A (zh) * | 2014-06-09 | 2014-09-17 | 山东力诺太阳能电力股份有限公司 | 一种太阳能电池的制作方法 |
| CN104103714A (zh) * | 2014-06-27 | 2014-10-15 | 浙江晶科能源有限公司 | 一种新型电池片的制备方法 |
| TWI513012B (zh) * | 2014-12-02 | 2015-12-11 | Neo Solar Power Corp | 異質接面太陽能電池及其製造方法 |
| CN106486567A (zh) * | 2016-11-14 | 2017-03-08 | 苏州阿特斯阳光电力科技有限公司 | 一种晶体硅太阳能电池的减反射膜及其制备方法 |
| JP2019050329A (ja) * | 2017-09-12 | 2019-03-28 | シャープ株式会社 | 太陽電池セルの製造方法 |
| CN107623050A (zh) * | 2017-09-22 | 2018-01-23 | 常州天合光能有限公司 | 太阳能电池 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006011595A1 (ja) * | 2004-07-29 | 2006-02-02 | Kyocera Corporation | 太陽電池素子とその製造方法 |
| NO20061668L (no) * | 2006-04-12 | 2007-10-15 | Renewable Energy Corp | Solcelle og fremgangsmate for fremstilling av samme |
| JP5019397B2 (ja) | 2006-12-01 | 2012-09-05 | シャープ株式会社 | 太陽電池およびその製造方法 |
| JP5067709B2 (ja) * | 2007-06-11 | 2012-11-07 | 株式会社島津製作所 | Ｃｖｄ装置 |
| KR100965778B1 (ko) * | 2008-01-16 | 2010-06-24 | 서울대학교산학협력단 | 고효율 다결정 실리콘 태양전지 및 그 제조방법 |
| KR101631711B1 (ko) | 2008-03-21 | 2016-06-17 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 확산용 인 페이스트 및 그것을 이용한 태양 전지의 제조 방법 |
| KR101101371B1 (ko) * | 2008-04-17 | 2012-01-02 | 한국세라믹기술원 | 태양전지 제조방법 |
| US8168462B2 (en) * | 2009-06-05 | 2012-05-01 | Applied Materials, Inc. | Passivation process for solar cell fabrication |
| US8617641B2 (en) * | 2009-11-12 | 2013-12-31 | Guardian Industries Corp. | Coated article comprising colloidal silica inclusive anti-reflective coating, and method of making the same |
| KR101381305B1 (ko) * | 2010-04-23 | 2014-04-07 | 솔렉셀, 인크. | 고효율 태양 전지 극 저 표면 재결합 속도를 달성하기 위한 패시베이션 방법 및 장치 |
-
2010
- 2010-07-15 JP JP2010160394A patent/JP5440433B2/ja active Active
-
2011
- 2011-07-12 KR KR1020137002657A patent/KR101600588B1/ko active IP Right Grant
- 2011-07-12 US US13/809,077 patent/US8859320B2/en active Active
- 2011-07-12 AU AU2011277505A patent/AU2011277505B2/en not_active Ceased
- 2011-07-12 IN IN291CHN2013 patent/IN2013CN00291A/en unknown
- 2011-07-12 WO PCT/JP2011/065861 patent/WO2012008436A1/ja active Application Filing
- 2011-07-12 ES ES11806766T patent/ES2732356T3/es active Active
- 2011-07-12 CN CN201180035025.XA patent/CN103155163B/zh active Active
- 2011-07-12 MY MYPI2013000004A patent/MY158973A/en unknown
- 2011-07-12 EP EP11806766.9A patent/EP2595197B1/en active Active
- 2011-07-12 SG SG2013002886A patent/SG187069A1/en unknown
- 2011-07-15 TW TW100125135A patent/TWI641155B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012008436A1 (ja) | 2012-01-19 |
| KR101600588B1 (ko) | 2016-03-07 |
| US8859320B2 (en) | 2014-10-14 |
| EP2595197A4 (en) | 2014-01-22 |
| TWI641155B (zh) | 2018-11-11 |
| CN103155163A (zh) | 2013-06-12 |
| ES2732356T3 (es) | 2019-11-22 |
| EP2595197A1 (en) | 2013-05-22 |
| JP5440433B2 (ja) | 2014-03-12 |
| KR20130041924A (ko) | 2013-04-25 |
| CN103155163B (zh) | 2016-08-03 |
| MY158973A (en) | 2016-11-30 |
| AU2011277505B2 (en) | 2014-08-21 |
| TW201225317A (en) | 2012-06-16 |
| AU2011277505A1 (en) | 2013-02-21 |
| JP2012023228A (ja) | 2012-02-02 |
| US20130171763A1 (en) | 2013-07-04 |
| SG187069A1 (en) | 2013-02-28 |
| EP2595197B1 (en) | 2019-05-08 |
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