CN106486567A - 一种晶体硅太阳能电池的减反射膜及其制备方法 - Google Patents
一种晶体硅太阳能电池的减反射膜及其制备方法 Download PDFInfo
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- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 34
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 34
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 25
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- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 11
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 9
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Abstract
本发明公开了一种晶体硅太阳能电池的减反射膜的制备方法,包括如下步骤:(1)采用PECVD方法在硅片表面沉积形成氮化硅膜;(2)将步骤(1)的硅片在氢气或氨气气氛下进行高温退火处理,(3)采用PECVD方法在步骤(2)的硅片表面沉积形成氮氧化硅膜;即可得到由氮化硅膜和氮氧化硅膜层叠组成的双层减反射膜。实验证明,与现有的单层氮化硅膜或双层叠层氮化硅膜相比,本发明的双层减反射膜具有更低的折射率,且能更好的减少电池片结区和发射区的缺陷,增加少子寿命和电池片的效率,最终制得的电池片具有更好的电性能和光电转换效率。
Description
技术领域
本发明涉及一种晶体硅太阳能电池的减反射膜及其制备方法,属于太阳能电池技术领域。
背景技术
常规的化石燃料日益消耗殆尽,在现有的可持续能源中,太阳能无疑是一种最清洁、最普遍和最有潜力的替代能源。太阳能发电装置又称为太阳能电池或光伏电池,可以将太阳能直接转换成电能,其发电原理是基于半导体PN结的光生伏特效应。其中,晶体硅太阳能电池由于丰富的硅储量得到了广泛应用。
现有的晶体硅太阳能电池的制备工艺如下:清洗制绒→扩散→刻蚀/去PSG→PECVD镀膜→丝网印刷→烧结→测试分档→分选→包装。其中,PECVD镀膜是指在硅片的表面镀上一层减反射膜,此减反射膜的主要作用是:降低反射率、良好的体钝化和表面钝化,以及利用氮化硅薄膜的强致密性和耐多数酸碱性,在硅片表面形成保护层。目前,主要采用等离子体增强化学气相沉积方法(PECVD,Plasma Enhanced Chemical VaporDeposition),使气体在硅电池片表面发生化学反应并形成覆盖层,即减反射膜。
然而,发明人研究发现:氮化硅在沉积过程中,在和硅片的接触表面存在很多缺陷;另外,电池片的结区和发射区存在很多缺陷和深能级杂质,这些缺陷和深能级杂质的存在,大大降低了电池片的少子寿命,最终导致电池片效率偏低。
因此,开发一种减反射膜的结构及其制备方法,以减少电池片结区和发射区的缺陷,增加少子寿命和电池片的效率,显然具有积极的现实意义。
发明内容
本发明的发明目的是提供一种晶体硅太阳能电池的减反射膜及其制备方法。
为达到上述发明目的,本发明采用的技术方案是:一种晶体硅太阳能电池的减反射膜的制备方法,包括如下步骤:
(1) 采用PECVD方法在硅片表面沉积形成氮化硅膜;
(2) 将步骤(1)的硅片在氢气或氨气气氛下进行高温退火处理,
所述氢气的流量控制在500~1200 sccm,或者,所述氨气的流量控制在500~1200 sccm;
(3) 采用PECVD方法在步骤(2)的硅片表面沉积形成氮氧化硅膜;其所用的反应气体为二氧化氮和硅烷;
即可得到由氮化硅膜和氮氧化硅膜层叠组成的双层减反射膜。
发明人研究发现:电池片的结区和发射区存在的缺陷和深能级杂质可以通过高温退火和增加H钝化来进行修复。因此,本发明在原PECVD机台结构的基础上,在工艺腔后面增加高温退火腔和氧化腔,以此来对电池片进行高温退火和增加H钝化。
上述技术方案中,所述步骤(1)中,所述氮化硅膜的厚度为60~70nm,其折射率为2.3~2.5。
上述技术方案中,所述步骤(1)中,沉积过程中,氨气和硅烷的体积比为2~4:1;采用的单个微波源射频功率为1600~2000W;形成所述氮化硅膜的工艺腔内的反应温度为300~345℃,其压强为0.1~0.2mbar。
优选的,所述步骤(2)中,所述高温退火的温度为450~550℃。优选的,所述高温退火的温度为490~510℃。更优选的,高温退火的温度为500℃。
优选的,所述步骤(2)中,所述氢气的流量控制在700~900 sccm,或者,所述氨气的流量控制在700~900 sccm。
更优选的,所述步骤(2)中,所述氢气的流量控制在800 sccm,或者,所述氨气的流量控制在800 sccm。
上述技术方案中,所述步骤(3)中,沉积过程中,二氧化氮和硅烷的体积比为1~2:1;采用的单个微波源射频功率为1600~2000W;形成所述氮化硅膜的工艺腔内的反应温度为300~345℃,其压强为0.1~0.2mbar;所述氮氧化硅膜的厚度为5~20nm。
优选的,所述氮氧化硅膜的厚度为18nm。
上述技术方案中,所述步骤(3)得到的双层减反射膜的综合折射率为2.03~2.10、综合膜厚为86~90nm。
本发明同时请求保护由上述制备方法得到的晶体硅太阳能电池的减反射膜。该减反射膜是由氮化硅膜和氮氧化硅膜层叠组成的双层减反射膜,综合折射率为2.03~2.10、综合膜厚为86~90nm。
本发明同时请求保护一种晶体硅太阳能电池的减反射膜的制备装置,主要包括PECVD设备,该PECVD设备内包括依次排列的工艺腔、冷却腔和出料腔;在所述工艺腔和冷却腔之间,还依次设有退火腔和氧化腔。
退火腔的主要作用是利用高温退火,退火可以修复硅片结区和发射区的内部缺陷,在退火的同时通入氢气或氨气,增加H钝化;在高温条件下,可以释放氮化硅膜层内部的应力,有利于保护氮化硅膜层。
氧化腔的主要作用是利用通入二氧化氮和硅烷反应,在硅片表面沉积一层5~20nm厚度的氧化层,阻止H离子的溢出,提升钝化作用。
上述技术方案中,所述退火腔上还设有与特气管路连通的通气口。
上述技术方案中,所述氧化腔上还设有与特气管路连通的通气口。
由于上述技术方案运用,本发明与现有技术相比具有下列优点:
1、本发明开发了一种新的晶体硅太阳能电池的减反射膜的制备方法,最终得到了由氮化硅膜和氮氧化硅膜层叠组成的双层减反射膜,实验证明,与现有的单层氮化硅膜或双层叠层氮化硅膜相比,本发明的双层减反射膜具有更低的折射率,且能更好的减少电池片结区和发射区的缺陷,增加少子寿命和电池片的效率,最终制得的电池片具有更好的的电性能和光电转换效率,取得了意想不到的效果;
2、本发明在现有的PECVD机台的基础上,在工艺腔后面增加高温退火腔和氧化腔,以此来对电池片进行高温退火和增加H钝化,因而在通一个设备上完成了减反射膜的制备,工序简单,效率较高;
3、本发明的设备结构简单,操作工艺简单,与现有工业化生产工艺兼容性较好,可以快速移植到工业化生产中,适于推广应用。
附图说明
图1是本发明实施例一的结构示意图。
其中:1、硅片;2、石墨框;3、上传输滚轮;4、进料腔;5、预热腔;6、工艺腔;7、退火腔;8、氧化腔;9、冷却腔;10、出料腔。
具体实施方式
下面结合实施例对本发明进一步描述。
实施例一:
参见图1所示,一种晶体硅太阳能电池的减反射膜的制备装置,主要包括PECVD设备,该PECVD设备内包括依次排列的进料腔4、预热腔5、工艺腔6、退火腔7、氧化腔8、冷却腔9和出料腔10。
使用时,设于石墨框2上的硅片1由上传输滚轮3带动进入PECVD设备的进料腔4,然后依次经过预热腔5、工艺腔6、退火腔7、氧化腔8、冷却腔9和出料腔10;最终完成减反射膜的制备。具体工艺如下,包括如下步骤:
(1) 采用PECVD方法在硅片表面沉积形成氮化硅膜;
沉积过程中,在工艺腔体内通入氨气和硅烷,利用微波激发氨气和硅烷,其中氨气和硅烷的体积比控制在3:1;
采用的单个微波源功率设定为1600W;
形成所述氮化硅膜的工艺腔内的反应温度为300℃;其压强为0.15mbar;
(2) 将步骤(1)的硅片在氢气气氛下进行高温退火处理,高温退火的温度为500℃,
所述氢气的流量控制在800 sccm;
(3) 采用PECVD方法在步骤(2)的硅片表面沉积形成氮氧化硅膜;其所用的反应气体为二氧化氮和硅烷;
沉积过程中,二氧化氮和硅烷的体积比为2:1;
采用的单个微波源射频功率为1600W;形成所述氮化硅膜的工艺腔内的反应温度为300℃,其压强为0.15mbar;
所述氮氧化硅膜的厚度为18nm,折射率为1.95;
即可得到由氮化硅膜和氮氧化硅膜层叠组成的双层减反射膜。
所述步骤(1)中,所述氮化硅膜的厚度为70nm,其折射率为2.35。
所述步骤(3)得到的双层减反射膜的综合折射率为2.04、综合膜厚为88nm。
对比例一:
采用现有的PECVD设备制备单层氮化硅薄膜。具体工艺如下:采用PECVD方法在硅片表面沉积形成氮化硅膜;
沉积过程中,氨气和硅烷的体积比为5:1;采用的单个微波源射频功率为1500W;形成所述氮化硅膜的工艺腔内的反应温度为350℃;其压强为0.25mbar;
得到的氮化硅膜的厚度为83nm,其折射率为2.12。
对比例二:
采用现有的PECVD设备制备双层叠层氮化硅薄膜。底层氮化硅膜的厚度为40nm,其折射率为2.2;表层氮化硅膜的厚度为45nm,其折射率为2.07;双层氮化硅薄膜的综合折射率为2.11,综合膜厚为85nm。
由上述实施例和对比例可知,本发明的双层减反射膜具有更低的折射率。
然后,对比上述实施例和对比例的电池片的电性能参数,对比结果如下:
Uoc(mV) | Isc(A) | FF(%) | EFF | |
实施例一 | 640.3 | 8.969 | 79.90 | 18.86% |
对比例一 | 636.7 | 8.889 | 79.77 | 18.55% |
对比例二 | 637.5 | 8.902 | 79.74 | 18.60% |
由上可见,相对于对比例,本申请的开路电压和短路电流也有明显的提升,光电转换效率提高了0.26~0.31%,取得了意想不到的效果。
Claims (10)
1.一种晶体硅太阳能电池的减反射膜的制备方法,其特征在于,包括如下步骤:
(1) 采用PECVD方法在硅片表面沉积形成氮化硅膜;
(2) 将步骤(1)的硅片在氢气或氨气气氛下进行高温退火处理;
所述氢气的流量控制在500~1200 sccm,或者,所述氨气的流量控制在500~1200 sccm;
(3) 采用PECVD方法在步骤(2)的硅片表面沉积形成氮氧化硅膜;其所用的反应气体为二氧化氮和硅烷;
即可得到由氮化硅膜和氮氧化硅膜层叠组成的双层减反射膜。
2.根据权利要求1所述的晶体硅太阳能电池的减反射膜的制备方法,其特征在于:所述步骤(1)中,所述氮化硅膜的厚度为60~70nm,其折射率为2.3~2.5。
3.根据权利要求1所述的晶体硅太阳能电池的减反射膜的制备方法,其特征在于:所述步骤(1)中,沉积过程中,氨气和硅烷的体积比为2~4:1;
采用的单个微波源射频功率为1600~2000W;
形成所述氮化硅膜的工艺腔内的反应温度为300~345℃,其压强为0.1~0.2mbar。
4.根据权利要求1所述的晶体硅太阳能电池的减反射膜的制备方法,其特征在于:所述步骤(2)中,所述高温退火的温度为450~550℃。
5.根据权利要求1所述的晶体硅太阳能电池的减反射膜的制备方法,其特征在于:所述步骤(2)中,所述氢气的流量控制在700~900 sccm,或者,所述氨气的流量控制在700~900sccm。
6.根据权利要求1所述的晶体硅太阳能电池的减反射膜的制备方法,其特征在于:所述步骤(3)中,沉积过程中,二氧化氮和硅烷的体积比为1~2:1;采用的单个微波源射频功率为1600~2000W;形成所述氮化硅膜的工艺腔内的反应温度为300~345℃,其压强为0.1~0.2mbar;所述氮氧化硅膜的厚度为5~20nm。
7.根据权利要求1所述的晶体硅太阳能电池的减反射膜的制备方法,其特征在于:所述步骤(3)得到的双层减反射膜的综合折射率为2.03~2.10,综合膜厚为86~90nm。
8.根据权利要求1所述的制备方法得到的晶体硅太阳能电池的减反射膜。
9.一种晶体硅太阳能电池的减反射膜的制备装置,主要包括PECVD设备,该PECVD设备内包括依次排列的工艺腔、冷却腔和出料腔;其特征在于:在所述工艺腔和冷却腔之间,还依次设有退火腔和氧化腔。
10.根据权利要求9所述的晶体硅太阳能电池的减反射膜的制备装置,其特征在于:所述退火腔和或氧化腔上还设有与特气管路连通的通气口。
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