CN107623050A - 太阳能电池 - Google Patents
太阳能电池 Download PDFInfo
- Publication number
- CN107623050A CN107623050A CN201710865359.9A CN201710865359A CN107623050A CN 107623050 A CN107623050 A CN 107623050A CN 201710865359 A CN201710865359 A CN 201710865359A CN 107623050 A CN107623050 A CN 107623050A
- Authority
- CN
- China
- Prior art keywords
- layer
- substrate
- passivation
- milliseconds
- nanometers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 87
- 238000002161 passivation Methods 0.000 claims abstract description 76
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 17
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 149
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 44
- 238000009792 diffusion process Methods 0.000 claims description 32
- 150000001875 compounds Chemical class 0.000 claims description 28
- 229910052757 nitrogen Inorganic materials 0.000 claims description 22
- 229910052715 tantalum Inorganic materials 0.000 claims description 16
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 16
- 239000007800 oxidant agent Substances 0.000 claims description 15
- 230000001590 oxidative effect Effects 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 230000008859 change Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 9
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000009790 rate-determining step (RDS) Methods 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 150000003482 tantalum compounds Chemical class 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710865359.9A CN107623050A (zh) | 2017-09-22 | 2017-09-22 | 太阳能电池 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710865359.9A CN107623050A (zh) | 2017-09-22 | 2017-09-22 | 太阳能电池 |
Publications (1)
Publication Number | Publication Date |
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CN107623050A true CN107623050A (zh) | 2018-01-23 |
Family
ID=61090674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710865359.9A Pending CN107623050A (zh) | 2017-09-22 | 2017-09-22 | 太阳能电池 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107623050A (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1085919A (zh) * | 1992-08-20 | 1994-04-27 | 南壁技术股份有限公司 | 减反射涂层 |
US20070042213A1 (en) * | 2005-07-15 | 2007-02-22 | H.C. Starck | Tantalum and niobium compounds and their use for chemical vapour deposition (CVD) |
CN102931255A (zh) * | 2012-11-20 | 2013-02-13 | 上饶光电高科技有限公司 | 一种背接触太阳能电池及其制造方法 |
CN103155163A (zh) * | 2010-07-15 | 2013-06-12 | 信越化学工业株式会社 | 太阳能电池的制造方法和制膜装置 |
CN103208558A (zh) * | 2012-01-16 | 2013-07-17 | E.I.内穆尔杜邦公司 | 太阳能电池背面电极 |
CN205881928U (zh) * | 2016-07-11 | 2017-01-11 | 上海大族新能源科技有限公司 | 太阳电池 |
-
2017
- 2017-09-22 CN CN201710865359.9A patent/CN107623050A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1085919A (zh) * | 1992-08-20 | 1994-04-27 | 南壁技术股份有限公司 | 减反射涂层 |
US20070042213A1 (en) * | 2005-07-15 | 2007-02-22 | H.C. Starck | Tantalum and niobium compounds and their use for chemical vapour deposition (CVD) |
CN103155163A (zh) * | 2010-07-15 | 2013-06-12 | 信越化学工业株式会社 | 太阳能电池的制造方法和制膜装置 |
CN103208558A (zh) * | 2012-01-16 | 2013-07-17 | E.I.内穆尔杜邦公司 | 太阳能电池背面电极 |
CN102931255A (zh) * | 2012-11-20 | 2013-02-13 | 上饶光电高科技有限公司 | 一种背接触太阳能电池及其制造方法 |
CN205881928U (zh) * | 2016-07-11 | 2017-01-11 | 上海大族新能源科技有限公司 | 太阳电池 |
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Legal Events
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PB01 | Publication | ||
PB01 | Publication | ||
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Applicant after: trina solar Ltd. Applicant after: THE AUSTRALIAN NATIONAL University Address before: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Applicant before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. Applicant before: THE AUSTRALIAN NATIONAL University Address after: Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Applicant after: TRINASOLAR Co.,Ltd. Applicant after: THE AUSTRALIAN NATIONAL University Address before: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Applicant before: trina solar Ltd. Applicant before: THE AUSTRALIAN NATIONAL University |
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Application publication date: 20180123 |