JP5067709B2 - Cvd装置 - Google Patents
Cvd装置 Download PDFInfo
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- JP5067709B2 JP5067709B2 JP2007154450A JP2007154450A JP5067709B2 JP 5067709 B2 JP5067709 B2 JP 5067709B2 JP 2007154450 A JP2007154450 A JP 2007154450A JP 2007154450 A JP2007154450 A JP 2007154450A JP 5067709 B2 JP5067709 B2 JP 5067709B2
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- chamber
- cvd
- heating
- substrate
- temperature
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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Description
Claims (3)
- 多結晶太陽電池のSiN(窒化シリコン)反射防止膜を形成するCVD装置において、
真空チャンバ内に、
CVDによるSiN薄膜の形成によって、多結晶シリコン基板上にSiN反射防止膜(窒化シリコン反射防止膜)を形成するCVD室と、
前記SiN薄膜を形成した後に、CVDのプロセス温度に維持、又はCVD温度のプロセス温度以上に加熱する加熱室を備え、
前記加熱室は、加熱処理中に水素ガスの導入を自在とし、CVD温度のプロセス温度以上への加熱を自在とすることを特徴とする、CVD装置。 - 多結晶太陽電池のSiN(窒化シリコン)反射防止膜を形成するCVD装置において、
真空チャンバ内に、
CVDによるSiN薄膜の形成によって、多結晶シリコン基板上にSiN反射防止膜(窒化シリコン反射防止膜)を形成するCVD室と、
前記SiN薄膜を形成した後に、CVDのプロセス温度に維持、又はCVD温度のプロセス温度以上への加熱と、基板の取り出しとを行う加熱取出室を備え、
前記加熱取出室は、加熱処理中に水素ガスの導入を自在とし、CVD温度のプロセス温度以上への加熱を自在とすることを特徴とする、CVD装置。 - 前記真空チャンバ内に、前記基板および当該基板を搭載する基板トレイを冷却する冷却機構を有する冷却室を備えることを特徴とする、請求項1または2に記載のCVD装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2007154450A JP5067709B2 (ja) | 2007-06-11 | 2007-06-11 | Cvd装置 |
Applications Claiming Priority (1)
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JP2007154450A JP5067709B2 (ja) | 2007-06-11 | 2007-06-11 | Cvd装置 |
Publications (2)
Publication Number | Publication Date |
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JP2008306141A JP2008306141A (ja) | 2008-12-18 |
JP5067709B2 true JP5067709B2 (ja) | 2012-11-07 |
Family
ID=40234552
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007154450A Expired - Fee Related JP5067709B2 (ja) | 2007-06-11 | 2007-06-11 | Cvd装置 |
Country Status (1)
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JP (1) | JP5067709B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5440433B2 (ja) | 2010-07-15 | 2014-03-12 | 信越化学工業株式会社 | 太陽電池の製造方法及び製膜装置 |
CN104795466B (zh) * | 2015-04-13 | 2016-08-24 | 陈恩深 | 一种太阳能电池的氢钝化设备 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07249584A (ja) * | 1994-03-10 | 1995-09-26 | Sony Corp | 化学的気相成長装置及びこれを用いた成膜方法 |
JPH07249623A (ja) * | 1994-03-11 | 1995-09-26 | Hitachi Ltd | シリコン窒化膜形成方法 |
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2007
- 2007-06-11 JP JP2007154450A patent/JP5067709B2/ja not_active Expired - Fee Related
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JP2008306141A (ja) | 2008-12-18 |
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