JP5438986B2 - 光電変換装置の製造方法 - Google Patents
光電変換装置の製造方法 Download PDFInfo
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- JP5438986B2 JP5438986B2 JP2009029344A JP2009029344A JP5438986B2 JP 5438986 B2 JP5438986 B2 JP 5438986B2 JP 2009029344 A JP2009029344 A JP 2009029344A JP 2009029344 A JP2009029344 A JP 2009029344A JP 5438986 B2 JP5438986 B2 JP 5438986B2
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- single crystal
- silicon layer
- crystal silicon
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- impurity
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H—ELECTRICITY
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Description
本発明は、光電変換を行うシリコンに対し、レーザビームの光強度を周期的に変化させる光変調手段を介してレーザビームを照射することで、シリコン層に凹凸構造を形成するものである。以下、図面を参照して説明する。
本形態では、光変調手段を用いてレーザビームを照射することで、光電変換を行うシリコン層に凹凸を形成する光電変換装置の製造方法及びそれにより製造される光電変換装置の構造について説明する。
本形態では、上記実施の形態と異なる光電変換装置の製造方法について説明する。上記実施の形態では、単結晶シリコン基板101から分離した第1単結晶シリコン層124に光変調手段を用いたレーザ処理を行うことによって表面に凹凸構造を形成する例について示した。本形態では、単結晶シリコン基板101から分離した単結晶シリコン層をエピタキシャル成長させた第2単結晶シリコン層に光変調手段を用いたレーザ処理を行うことによって表面に凹凸を形成する方法に関して説明する。なお、その他の構成は上記実施の形態に準じるものとし、説明は省略する。
本形態では、上記実施の形態2、3と異なる光電変換装置の製造方法について、図13乃至図15を参照して説明する。具体的には、単結晶シリコン基板101に脆化層108、第1電極116及び絶縁層112を形成する方法に関して説明する。なお、その他の構成は上記実施の形態に準じるものとし、説明は省略する。
本形態では、単結晶シリコン基板101から第1単結晶シリコン層124を分離して残る分離単結晶シリコン基板103を再生処理する例について説明する。
本形態では、ユニットセルを複数積層した光電変換装置の例について説明する。本形態では、ユニットセルを2層積層した所謂タンデム型の光電変換装置について説明する。なお、本形態において、支持基板110〜第1ユニットセル120までの構成及び製造方法は上記実施の形態に準じるものとし、重複する部分の説明は省略する。
本形態では、ユニットセルを複数積層した光電変換装置、具体的にはユニットセルを3層積層した所謂スタック型の光電変換装置について図面を参照して説明する。
実施形態2乃至7により得られる光電変換装置を用いて太陽光発電モジュールを製造することができる。本実施の形態では、上記実施の形態2に示す光電変換装置100を用いた太陽光発電モジュールの一例を図20に示す。もちろん、他の形態で示す光電変換装置を適用してもよい。
図21は上記実施の形態8で示した太陽光発電モジュール1028を用いた太陽光発電システムの一例を示す。一又は複数の太陽光発電モジュール1028の出力電力は、充電制御回路1029により蓄電池1030を充電する。蓄電池1030の充電量が多い場合には、負荷1031に直接出力される場合もある。
12 凹部
14 凸部
20 レーザビーム
21 位相
22 ピーク
23 底
24 極大点
25 光強度分布
26 極小点
30 シリコン
Claims (5)
- 基板上の、第1電極と、第1不純物シリコン層と、第1単結晶シリコン層と、を形成する工程と、
前記第1単結晶シリコン層に、周期的に極大点と極小点とを繰り返す強度分布を有するレーザビームを照射して、前記第1単結晶シリコン層の表面に凹凸を形成する工程と、
前記第1単結晶シリコン層上に、第2単結晶シリコン層を形成する工程と、
前記第2単結晶シリコン層の表面又は前記第2単結晶シリコン層上に、第2不純物シリコン層を形成する工程と、
前記第2不純物シリコン層上に、第3不純物シリコン層と、非単結晶シリコン層と、第4不純物シリコン層と、を形成する工程と、
前記第4不純物シリコン層上に、第2電極を形成する工程と、
前記第2電極をマスクとして、前記第1単結晶シリコン層と、前記第2単結晶シリコン層と、前記第2不純物シリコン層と、前記第3不純物シリコン層と、前記非単結晶シリコン層と、前記第4不純物シリコン層と、をエッチングする工程と、
前記第1電極上の第3電極と、前記第2電極上の第4電極と、を形成する工程と、を有し
前記レーザビームの前記極小点における強度は、前記第1の単結晶シリコン層を部分溶融させることができる強度であることを特徴とする光電変換装置の作製方法。 - 基板上の、第1電極と、第1不純物シリコン層と、第1単結晶シリコン層と、を形成する工程と、
前記第1単結晶シリコン層に、周期的に極大点と極小点とを繰り返す強度分布を有するレーザビームを照射して、前記第1単結晶シリコン層の表面に凹凸を形成する工程と、
前記第1単結晶シリコン層上に、第2単結晶シリコン層を形成する工程と、
前記第2単結晶シリコン層の表面又は前記第2単結晶シリコン層上に、第2不純物シリコン層を形成する工程と、
前記第2不純物シリコン層上に、第3不純物シリコン層と、第1非単結晶シリコン層と、第4不純物シリコン層と、第5不純物シリコン層と、第2非単結晶シリコン層と、第6不純物シリコン層と、を形成する工程と、
前記第6不純物シリコン層上に、第2電極を形成する工程と、
前記第2電極をマスクとして、前記第1単結晶シリコン層と、前記第2単結晶シリコン層と、前記第2不純物シリコン層と、前記第3不純物シリコン層と、前記第1非単結晶シリコン層と、前記第4不純物シリコン層と、前記第5不純物シリコン層と、前記第2非単結晶シリコン層と、前記第6不純物シリコン層と、エッチングする工程と、
前記第1電極上の第3電極と、前記第2電極上の第4電極と、を形成する工程と、を有し
前記レーザビームの前記極小点における強度は、前記第1の単結晶シリコン層を部分溶融させることができる強度であり、
前記第2非単結晶シリコン層のエネルギーギャップは、前記第1非単結晶シリコン層のエネルギーギャップよりも大きいことを特徴とする光電変換装置の作製方法。 - 請求項1又は2において、
前記レーザビームの照射により、前記第1単結晶シリコン層の結晶欠陥を修復することを特徴とする光電変換装置の作製方法。 - 請求項1乃至3のいずれか一項において、
前記第1電極と、前記第1不純物シリコン層と、前記第1単結晶シリコン層と、を形成する工程は、
単結晶シリコン基板上に、前記第1電極を形成する工程と、
前記第1電極を介して前記単結晶シリコン基板に不純物元素を添加して前記第1不純物シリコン層を、前記第1電極を介して前記単結晶シリコン基板にイオン又はクラスターイオンを照射して脆化層を、それぞれ形成する工程と、
前記単結晶シリコン基板と前記基板とを貼り合わせ、前記単結晶シリコン基板の一部を分離する工程と、を有することを特徴とする光電変換装置の作製方法。 - 請求項1乃至4のいずれか一項において、
前記レーザビームの照射は、位相シフトマスク又はスリットパターンを有するマスクを用いて行うことを特徴とする光電変換装置の作製方法。
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US20110041910A1 (en) * | 2009-08-18 | 2011-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
US8704083B2 (en) | 2010-02-11 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and fabrication method thereof |
KR101068854B1 (ko) | 2010-02-19 | 2011-09-29 | 삼성코닝정밀소재 주식회사 | 패턴드 박막 기판 제조방법 |
DE102010010813A1 (de) * | 2010-03-03 | 2011-09-08 | Centrotherm Photovoltaics Ag | Verfahren zur Dotierung eines Halbleitersubstrats und Solarzelle mit zweistufiger Dotierung |
US8569098B2 (en) | 2010-06-18 | 2013-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing photoelectric conversion device |
WO2011158722A1 (en) | 2010-06-18 | 2011-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
US9076909B2 (en) | 2010-06-18 | 2015-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method for manufacturing the same |
US8858818B2 (en) * | 2010-09-30 | 2014-10-14 | Suvolta, Inc. | Method for minimizing defects in a semiconductor substrate due to ion implantation |
WO2012104997A1 (ja) * | 2011-02-01 | 2012-08-09 | 三菱電機株式会社 | 太陽電池セルとその製造方法、および太陽電池モジュール |
US8628996B2 (en) * | 2011-06-15 | 2014-01-14 | International Business Machines Corporation | Uniformly distributed self-assembled cone-shaped pillars for high efficiency solar cells |
CN103688367A (zh) * | 2011-07-25 | 2014-03-26 | 日立化成株式会社 | 太阳能电池基板、太阳能电池基板的制造方法、太阳能电池元件及太阳能电池 |
US20130045560A1 (en) * | 2011-08-16 | 2013-02-21 | Kenneth P. MacWilliams | Techniques and systems for fabricating anti-reflective and passivation layers on solar cells |
US8778786B1 (en) | 2012-05-29 | 2014-07-15 | Suvolta, Inc. | Method for substrate preservation during transistor fabrication |
JP5858889B2 (ja) * | 2012-09-24 | 2016-02-10 | 三菱電機株式会社 | 太陽電池用基板、その製造方法、太陽電池及びその製造方法 |
EP3109894B1 (en) * | 2014-02-18 | 2020-11-25 | NGK Insulators, Ltd. | Composite substrate for semiconductor, and method for manufacturing a composite substrate for semiconductor |
JP6534263B2 (ja) * | 2015-02-05 | 2019-06-26 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP6459948B2 (ja) * | 2015-12-15 | 2019-01-30 | 株式会社Sumco | 半導体エピタキシャルウェーハの製造方法および固体撮像素子の製造方法 |
JP2019102576A (ja) * | 2017-11-30 | 2019-06-24 | セイコーエプソン株式会社 | 電子機器および光電変換素子の製造方法 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2702304B2 (ja) * | 1991-03-27 | 1998-01-21 | 三洋電機株式会社 | 多結晶半導体層の形成方法及びこれを用いた光起電力装置の製造方法 |
US6697129B1 (en) | 1996-02-14 | 2004-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Guest-host mode liquid crystal display device of lateral electric field driving type |
JP3204986B2 (ja) * | 1996-05-28 | 2001-09-04 | ザ トラスティース オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 基板上の半導体膜領域の結晶化処理及びこの方法により製造されたデバイス |
JPH1093122A (ja) | 1996-09-10 | 1998-04-10 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜太陽電池の製造方法 |
JPH10335683A (ja) | 1997-05-28 | 1998-12-18 | Ion Kogaku Kenkyusho:Kk | タンデム型太陽電池およびその製造方法 |
JP2001053020A (ja) | 1999-08-06 | 2001-02-23 | Sony Corp | 半導体薄膜の結晶化方法及び薄膜半導体装置の製造方法 |
US6548370B1 (en) | 1999-08-18 | 2003-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces |
US6489222B2 (en) | 2000-06-02 | 2002-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
US7078321B2 (en) | 2000-06-19 | 2006-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
US7217605B2 (en) | 2000-11-29 | 2007-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method and method of manufacturing a semiconductor device |
JP2003258285A (ja) | 2002-02-27 | 2003-09-12 | Sharp Corp | 表面凹凸構造の作製方法及び太陽電池 |
JP2004119919A (ja) | 2002-09-30 | 2004-04-15 | Hitachi Ltd | 半導体薄膜および半導体薄膜の製造方法 |
JP4389514B2 (ja) * | 2003-08-08 | 2009-12-24 | 日立電線株式会社 | 薄膜半導体の形成方法 |
JP2005129769A (ja) | 2003-10-24 | 2005-05-19 | Hitachi Ltd | 半導体薄膜の改質方法、改質した半導体薄膜とその評価方法、およびこの半導体薄膜で形成した薄膜トランジスタ、並びにこの薄膜トランジスタを用いて構成した回路を有する画像表示装置 |
EP1770443B1 (en) | 2005-09-28 | 2016-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing apparatus and exposure method |
KR101477262B1 (ko) | 2005-12-28 | 2014-12-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 제조방법 |
TWI479660B (zh) | 2006-08-31 | 2015-04-01 | Semiconductor Energy Lab | 薄膜電晶體,其製造方法,及半導體裝置 |
JP2008112847A (ja) * | 2006-10-30 | 2008-05-15 | Shin Etsu Chem Co Ltd | 単結晶シリコン太陽電池の製造方法及び単結晶シリコン太陽電池 |
ATE518241T1 (de) * | 2007-01-24 | 2011-08-15 | Soitec Silicon On Insulator | Herstellungsverfahren für wafer aus silizium auf isolator und entsprechender wafer |
CN101652867B (zh) | 2007-04-06 | 2012-08-08 | 株式会社半导体能源研究所 | 光伏器件及其制造方法 |
EP2143146A1 (en) | 2007-04-13 | 2010-01-13 | Semiconductor Energy Laboratory Co, Ltd. | Photovoltaic device and method for manufacturing the same |
CN101842910B (zh) | 2007-11-01 | 2013-03-27 | 株式会社半导体能源研究所 | 用于制造光电转换器件的方法 |
KR101608953B1 (ko) | 2007-11-09 | 2016-04-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 광전 변환 장치 및 그 제조 방법 |
TWI452703B (zh) | 2007-11-16 | 2014-09-11 | Semiconductor Energy Lab | 光電轉換裝置及其製造方法 |
US20090139558A1 (en) | 2007-11-29 | 2009-06-04 | Shunpei Yamazaki | Photoelectric conversion device and manufacturing method thereof |
JP5286046B2 (ja) | 2007-11-30 | 2013-09-11 | 株式会社半導体エネルギー研究所 | 光電変換装置の製造方法 |
JP5248994B2 (ja) | 2007-11-30 | 2013-07-31 | 株式会社半導体エネルギー研究所 | 光電変換装置の製造方法 |
JP5248995B2 (ja) | 2007-11-30 | 2013-07-31 | 株式会社半導体エネルギー研究所 | 光電変換装置の製造方法 |
EP2075850A3 (en) | 2007-12-28 | 2011-08-24 | Semiconductor Energy Laboratory Co, Ltd. | Photoelectric conversion device and manufacturing method thereof |
JP5572307B2 (ja) | 2007-12-28 | 2014-08-13 | 株式会社半導体エネルギー研究所 | 光電変換装置の製造方法 |
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US20090209059A1 (en) | 2009-08-20 |
US20110318864A1 (en) | 2011-12-29 |
US8313975B2 (en) | 2012-11-20 |
US8017429B2 (en) | 2011-09-13 |
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