JP2013536151A5 - - Google Patents
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- Publication number
- JP2013536151A5 JP2013536151A5 JP2013525950A JP2013525950A JP2013536151A5 JP 2013536151 A5 JP2013536151 A5 JP 2013536151A5 JP 2013525950 A JP2013525950 A JP 2013525950A JP 2013525950 A JP2013525950 A JP 2013525950A JP 2013536151 A5 JP2013536151 A5 JP 2013536151A5
- Authority
- JP
- Japan
- Prior art keywords
- glass substrate
- layer
- metal
- silica
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 25
- 239000011521 glass Substances 0.000 claims 17
- 238000000034 method Methods 0.000 claims 16
- 239000010410 layer Substances 0.000 claims 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 11
- 239000001301 oxygen Substances 0.000 claims 9
- 229910052760 oxygen Inorganic materials 0.000 claims 9
- 239000002184 metal Substances 0.000 claims 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 6
- 239000011247 coating layer Substances 0.000 claims 5
- 229910021426 porous silicon Inorganic materials 0.000 claims 5
- 239000007789 gas Substances 0.000 claims 4
- 239000013078 crystal Substances 0.000 claims 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 2
- 239000002019 doping agent Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 238000001816 cooling Methods 0.000 claims 1
- 239000002178 crystalline material Substances 0.000 claims 1
- 238000002425 crystallisation Methods 0.000 claims 1
- 230000008025 crystallization Effects 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000000605 extraction Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims 1
- 238000013508 migration Methods 0.000 claims 1
- 230000005012 migration Effects 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US37637910P | 2010-08-24 | 2010-08-24 | |
| US61/376,379 | 2010-08-24 | ||
| US13/100,593 US8415555B2 (en) | 2010-08-24 | 2011-05-04 | Dimensional silica-based porous silicon structures and methods of fabrication |
| US13/100,593 | 2011-05-04 | ||
| PCT/US2011/047367 WO2012027121A2 (en) | 2010-08-24 | 2011-08-11 | Dimensional silica-based porous silicon structures and methods of fabrication |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013536151A JP2013536151A (ja) | 2013-09-19 |
| JP2013536151A5 true JP2013536151A5 (enExample) | 2014-09-25 |
| JP5878535B2 JP5878535B2 (ja) | 2016-03-08 |
Family
ID=45697815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013525950A Expired - Fee Related JP5878535B2 (ja) | 2010-08-24 | 2011-08-11 | 寸法のあるシリカ系シリコン構造およびその製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US8415555B2 (enExample) |
| EP (1) | EP2609234A4 (enExample) |
| JP (1) | JP5878535B2 (enExample) |
| KR (1) | KR20130108531A (enExample) |
| CN (1) | CN103069055B (enExample) |
| AU (1) | AU2011293715A1 (enExample) |
| TW (1) | TWI560163B (enExample) |
| WO (1) | WO2012027121A2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10629900B2 (en) | 2011-05-04 | 2020-04-21 | Corning Incorporated | Porous silicon compositions and devices and methods thereof |
| KR101344738B1 (ko) * | 2011-12-12 | 2013-12-26 | 한국과학기술연구원 | 고감도 투명 가스 센서 및 그 제조방법 |
| US9285332B2 (en) | 2011-12-12 | 2016-03-15 | Korea Institute Of Science And Technology | Low power consumption type gas sensor and method for manufacturing the same |
| KR101602418B1 (ko) * | 2012-04-06 | 2016-03-10 | 코닝정밀소재 주식회사 | 광추출 효율이 향상된 유기 발광소자용 기판, 그 제조방법 및 이를 구비하는 유기 발광소자 |
| US8921841B2 (en) * | 2012-05-09 | 2014-12-30 | Samsung Corning Precision Materials Co., Ltd. | Porous glass substrate for displays and method of manufacturing the same |
| JP2017514273A (ja) | 2014-04-09 | 2017-06-01 | コーニング インコーポレイテッド | リチウムイオン電池アノードのための方法及び材料 |
| KR102544089B1 (ko) | 2014-11-25 | 2023-06-15 | 코닝 인코포레이티드 | 리튬이온 배터리 애노드용 물질 및 방법 |
| CN107004630A (zh) * | 2014-12-10 | 2017-08-01 | 应用材料公司 | 用于全卷绕多孔硅形成的系统和方法 |
| WO2016111832A1 (en) * | 2015-01-09 | 2016-07-14 | Applied Materials, Inc. | Laminate and core shell formation of silicide nanowire |
| EP3380436B1 (en) | 2015-11-25 | 2023-07-26 | Corning Incorporated | Porous silicon alloy compositions, methods for making them and devices thereof |
| CN111051256A (zh) | 2017-07-31 | 2020-04-21 | 康宁股份有限公司 | 具有非玻璃芯体和玻璃包封物的层压制品及其方法 |
| CN119069675A (zh) * | 2017-12-01 | 2024-12-03 | 大洲电子材料株式会社 | 包含氧化硅复合物的用于非水电解质二次电池的负极活性物质及其制备方法 |
| US11605811B2 (en) | 2018-01-30 | 2023-03-14 | Lg Energy Solution, Ltd. | Negative electrode active material, preparation method thereof, negative electrode including the negative electrode active material, and secondary battery including the negative electrode |
| CN115010380B (zh) * | 2022-08-09 | 2022-11-15 | 中国华能集团清洁能源技术研究院有限公司 | 一种基于无序光子晶体的光伏玻璃的制备方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3757511A (en) * | 1971-05-17 | 1973-09-11 | Motorola Inc | Light emitting diode display for electronic timepiece |
| US6376859B1 (en) * | 1998-07-29 | 2002-04-23 | Texas Instruments Incorporated | Variable porosity porous silicon isolation |
| KR100434537B1 (ko) * | 1999-03-31 | 2004-06-05 | 삼성전자주식회사 | 다공질 실리콘 혹은 다공질 산화 실리콘을 이용한 두꺼운 희생층을 가진 다층 구조 웨이퍼 및 그 제조방법 |
| WO2006023594A2 (en) * | 2004-08-18 | 2006-03-02 | Corning Incorporated | High strain glass/glass-ceramic containing semiconductor-on-insulator structures |
| US7615206B2 (en) * | 2006-08-11 | 2009-11-10 | Georgia Tech Research Corporation | Methods of fabricating nanoscale-to-microscale structures |
| KR101375328B1 (ko) * | 2007-07-27 | 2014-03-19 | 삼성에스디아이 주식회사 | Ｓｉ／Ｃ 복합물, 이를 포함하는 음극활물질 및 리튬전지 |
| US20090056797A1 (en) * | 2007-08-28 | 2009-03-05 | Blue Square Energy Incorporated | Photovoltaic Thin-Film Solar Cell and Method Of Making The Same |
| US8813522B2 (en) * | 2008-10-14 | 2014-08-26 | University Of Central Florida Research Foundation, Inc. | Silicon photonic fiber and method of manufacture |
-
2011
- 2011-05-04 US US13/100,593 patent/US8415555B2/en not_active Expired - Fee Related
- 2011-08-11 KR KR20137002957A patent/KR20130108531A/ko not_active Ceased
- 2011-08-11 WO PCT/US2011/047367 patent/WO2012027121A2/en not_active Ceased
- 2011-08-11 EP EP11820371.0A patent/EP2609234A4/en not_active Withdrawn
- 2011-08-11 CN CN201180040775.6A patent/CN103069055B/zh not_active Expired - Fee Related
- 2011-08-11 AU AU2011293715A patent/AU2011293715A1/en not_active Abandoned
- 2011-08-11 JP JP2013525950A patent/JP5878535B2/ja not_active Expired - Fee Related
- 2011-08-24 TW TW100130322A patent/TWI560163B/zh not_active IP Right Cessation
-
2013
- 2013-03-20 US US13/847,740 patent/US20130209781A1/en not_active Abandoned
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