JP5878535B2 - 寸法のあるシリカ系シリコン構造およびその製造方法 - Google Patents

寸法のあるシリカ系シリコン構造およびその製造方法 Download PDF

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Publication number
JP5878535B2
JP5878535B2 JP2013525950A JP2013525950A JP5878535B2 JP 5878535 B2 JP5878535 B2 JP 5878535B2 JP 2013525950 A JP2013525950 A JP 2013525950A JP 2013525950 A JP2013525950 A JP 2013525950A JP 5878535 B2 JP5878535 B2 JP 5878535B2
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Japan
Prior art keywords
glass substrate
silica glass
silica
porous silicon
metal
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Expired - Fee Related
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JP2013525950A
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English (en)
Japanese (ja)
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JP2013536151A5 (enExample
JP2013536151A (ja
Inventor
エー ベルマン，ロバート
エー ベルマン，ロバート
ボレリ，ニコラス　エフ
エフ ボレリ，ニコラス
エー デネカ，ディヴィッド
エー デネカ，ディヴィッド
エム オマリー，シャウン
エム オマリー，シャウン
エム シュナイダー，ヴィター
エム シュナイダー，ヴィター
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Corning Inc
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Corning Inc
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0095—Solution impregnating; Solution doping; Molecular stuffing, e.g. of porous glass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/008—Other surface treatment of glass not in the form of fibres or filaments comprising a lixiviation step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H10P14/2922—
    • H10P14/3211—
    • H10P14/3256—
    • H10P14/3411—
    • H10P14/36—
    • H10P32/1414—
    • H10P32/171—
    • H10P36/03—
    • H10P90/00—
    • H10P90/1904—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249967—Inorganic matrix in void-containing component
    • Y10T428/249969—Of silicon-containing material [e.g., glass, etc.]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Recrystallisation Techniques (AREA)
  • Surface Treatment Of Glass (AREA)
  • Silicon Compounds (AREA)
  • Laminated Bodies (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Glass Compositions (AREA)
JP2013525950A 2010-08-24 2011-08-11 寸法のあるシリカ系シリコン構造およびその製造方法 Expired - Fee Related JP5878535B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US37637910P 2010-08-24 2010-08-24
US61/376,379 2010-08-24
US13/100,593 US8415555B2 (en) 2010-08-24 2011-05-04 Dimensional silica-based porous silicon structures and methods of fabrication
US13/100,593 2011-05-04
PCT/US2011/047367 WO2012027121A2 (en) 2010-08-24 2011-08-11 Dimensional silica-based porous silicon structures and methods of fabrication

Publications (3)

Publication Number Publication Date
JP2013536151A JP2013536151A (ja) 2013-09-19
JP2013536151A5 JP2013536151A5 (enExample) 2014-09-25
JP5878535B2 true JP5878535B2 (ja) 2016-03-08

Family

ID=45697815

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013525950A Expired - Fee Related JP5878535B2 (ja) 2010-08-24 2011-08-11 寸法のあるシリカ系シリコン構造およびその製造方法

Country Status (8)

Country Link
US (2) US8415555B2 (enExample)
EP (1) EP2609234A4 (enExample)
JP (1) JP5878535B2 (enExample)
KR (1) KR20130108531A (enExample)
CN (1) CN103069055B (enExample)
AU (1) AU2011293715A1 (enExample)
TW (1) TWI560163B (enExample)
WO (1) WO2012027121A2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10629900B2 (en) 2011-05-04 2020-04-21 Corning Incorporated Porous silicon compositions and devices and methods thereof
US9285332B2 (en) 2011-12-12 2016-03-15 Korea Institute Of Science And Technology Low power consumption type gas sensor and method for manufacturing the same
KR101344738B1 (ko) * 2011-12-12 2013-12-26 한국과학기술연구원 고감도 투명 가스 센서 및 그 제조방법
KR101602418B1 (ko) * 2012-04-06 2016-03-10 코닝정밀소재 주식회사 광추출 효율이 향상된 유기 발광소자용 기판, 그 제조방법 및 이를 구비하는 유기 발광소자
US8921841B2 (en) * 2012-05-09 2014-12-30 Samsung Corning Precision Materials Co., Ltd. Porous glass substrate for displays and method of manufacturing the same
WO2015157538A1 (en) 2014-04-09 2015-10-15 Corning Incorporated Method and material for lithium ion battery anodes
WO2016085953A1 (en) 2014-11-25 2016-06-02 Corning Incorporated Method and material for lithium ion battery anodes
WO2016094271A1 (en) * 2014-12-10 2016-06-16 Applied Materials, Inc. System and method for all wrap around porous silicon formation
WO2016111832A1 (en) * 2015-01-09 2016-07-14 Applied Materials, Inc. Laminate and core shell formation of silicide nanowire
EP3380436B1 (en) 2015-11-25 2023-07-26 Corning Incorporated Porous silicon alloy compositions, methods for making them and devices thereof
CN111051256A (zh) 2017-07-31 2020-04-21 康宁股份有限公司 具有非玻璃芯体和玻璃包封物的层压制品及其方法
KR102185490B1 (ko) * 2017-12-01 2020-12-02 대주전자재료 주식회사 규소산화물복합체를 포함하는 비수전해질 이차전지용 음극활물질 및 이의 제조방법
KR102290961B1 (ko) 2018-01-30 2021-08-20 주식회사 엘지에너지솔루션 음극 활물질, 상기 음극 활물질의 제조 방법, 상기 음극 활물질을 포함하는 음극, 및 상기 음극을 포함하는 이차 전지
CN115010380B (zh) * 2022-08-09 2022-11-15 中国华能集团清洁能源技术研究院有限公司 一种基于无序光子晶体的光伏玻璃的制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3757511A (en) * 1971-05-17 1973-09-11 Motorola Inc Light emitting diode display for electronic timepiece
US6376859B1 (en) * 1998-07-29 2002-04-23 Texas Instruments Incorporated Variable porosity porous silicon isolation
KR100434537B1 (ko) * 1999-03-31 2004-06-05 삼성전자주식회사 다공질 실리콘 혹은 다공질 산화 실리콘을 이용한 두꺼운 희생층을 가진 다층 구조 웨이퍼 및 그 제조방법
WO2006023594A2 (en) * 2004-08-18 2006-03-02 Corning Incorporated High strain glass/glass-ceramic containing semiconductor-on-insulator structures
US7615206B2 (en) * 2006-08-11 2009-11-10 Georgia Tech Research Corporation Methods of fabricating nanoscale-to-microscale structures
KR101375328B1 (ko) * 2007-07-27 2014-03-19 삼성에스디아이 주식회사 Ｓｉ／Ｃ 복합물, 이를 포함하는 음극활물질 및 리튬전지
US20090056797A1 (en) * 2007-08-28 2009-03-05 Blue Square Energy Incorporated Photovoltaic Thin-Film Solar Cell and Method Of Making The Same
US8813522B2 (en) * 2008-10-14 2014-08-26 University Of Central Florida Research Foundation, Inc. Silicon photonic fiber and method of manufacture

Also Published As

Publication number Publication date
TW201217290A (en) 2012-05-01
CN103069055A (zh) 2013-04-24
EP2609234A4 (en) 2015-11-04
CN103069055B (zh) 2016-08-03
US20120052656A1 (en) 2012-03-01
EP2609234A2 (en) 2013-07-03
JP2013536151A (ja) 2013-09-19
WO2012027121A3 (en) 2012-08-09
TWI560163B (en) 2016-12-01
AU2011293715A1 (en) 2013-01-31
US8415555B2 (en) 2013-04-09
US20130209781A1 (en) 2013-08-15
KR20130108531A (ko) 2013-10-04
WO2012027121A2 (en) 2012-03-01

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