CN103069055B - 尺寸性二氧化硅基多孔硅结构及其制造方法 - Google Patents

尺寸性二氧化硅基多孔硅结构及其制造方法 Download PDF

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Publication number
CN103069055B
CN103069055B CN201180040775.6A CN201180040775A CN103069055B CN 103069055 B CN103069055 B CN 103069055B CN 201180040775 A CN201180040775 A CN 201180040775A CN 103069055 B CN103069055 B CN 103069055B
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China
Prior art keywords
base material
glass base
silica glass
porous silicon
layer
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Expired - Fee Related
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CN201180040775.6A
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English (en)
Chinese (zh)
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CN103069055A (zh
Inventor
R·A·贝尔曼
N·F·伯雷利
D·A·德纳卡
S·M·奥马利
V·M·施耐德
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Corning Inc
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Corning Inc
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0095—Solution impregnating; Solution doping; Molecular stuffing, e.g. of porous glass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/008—Other surface treatment of glass not in the form of fibres or filaments comprising a lixiviation step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249967—Inorganic matrix in void-containing component
    • Y10T428/249969—Of silicon-containing material [e.g., glass, etc.]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Surface Treatment Of Glass (AREA)
  • Silicon Compounds (AREA)
  • Glass Compositions (AREA)
  • Laminated Bodies (AREA)
  • Photovoltaic Devices (AREA)
CN201180040775.6A 2010-08-24 2011-08-11 尺寸性二氧化硅基多孔硅结构及其制造方法 Expired - Fee Related CN103069055B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US37637910P 2010-08-24 2010-08-24
US61/376,379 2010-08-24
US13/100,593 US8415555B2 (en) 2010-08-24 2011-05-04 Dimensional silica-based porous silicon structures and methods of fabrication
US13/100,593 2011-05-04
PCT/US2011/047367 WO2012027121A2 (en) 2010-08-24 2011-08-11 Dimensional silica-based porous silicon structures and methods of fabrication

Publications (2)

Publication Number Publication Date
CN103069055A CN103069055A (zh) 2013-04-24
CN103069055B true CN103069055B (zh) 2016-08-03

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Country Link
US (2) US8415555B2 (enExample)
EP (1) EP2609234A4 (enExample)
JP (1) JP5878535B2 (enExample)
KR (1) KR20130108531A (enExample)
CN (1) CN103069055B (enExample)
AU (1) AU2011293715A1 (enExample)
TW (1) TWI560163B (enExample)
WO (1) WO2012027121A2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10629900B2 (en) 2011-05-04 2020-04-21 Corning Incorporated Porous silicon compositions and devices and methods thereof
KR101344738B1 (ko) * 2011-12-12 2013-12-26 한국과학기술연구원 고감도 투명 가스 센서 및 그 제조방법
US9285332B2 (en) 2011-12-12 2016-03-15 Korea Institute Of Science And Technology Low power consumption type gas sensor and method for manufacturing the same
KR101602418B1 (ko) * 2012-04-06 2016-03-10 코닝정밀소재 주식회사 광추출 효율이 향상된 유기 발광소자용 기판, 그 제조방법 및 이를 구비하는 유기 발광소자
US8921841B2 (en) * 2012-05-09 2014-12-30 Samsung Corning Precision Materials Co., Ltd. Porous glass substrate for displays and method of manufacturing the same
KR102421529B1 (ko) * 2014-04-09 2022-07-15 코닝 인코포레이티드 리튬 이온 배터리 애노드를 위한 방법 및 재료
US9917299B2 (en) 2014-11-25 2018-03-13 Corning Incorporated Method and material for lithium ion battery anodes
US20170317225A1 (en) * 2014-12-10 2017-11-02 Applied Materials, Inc. System and method for all wrap around porous silicon formation
US10593592B2 (en) 2015-01-09 2020-03-17 Applied Materials, Inc. Laminate and core shell formation of silicide nanowire
WO2017091543A1 (en) 2015-11-25 2017-06-01 Corning Incorporated Porous silicon compositions and devices and methods thereof
CN111051256A (zh) 2017-07-31 2020-04-21 康宁股份有限公司 具有非玻璃芯体和玻璃包封物的层压制品及其方法
CN119069675A (zh) * 2017-12-01 2024-12-03 大洲电子材料株式会社 包含氧化硅复合物的用于非水电解质二次电池的负极活性物质及其制备方法
EP3709405B1 (en) 2018-01-30 2024-08-07 LG Energy Solution, Ltd. Negative electrode active material, preparation method thereof, negative electrode including the negative electrode active material, and secondary battery including the negative electrode
CN115010380B (zh) * 2022-08-09 2022-11-15 中国华能集团清洁能源技术研究院有限公司 一种基于无序光子晶体的光伏玻璃的制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090056797A1 (en) * 2007-08-28 2009-03-05 Blue Square Energy Incorporated Photovoltaic Thin-Film Solar Cell and Method Of Making The Same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3757511A (en) * 1971-05-17 1973-09-11 Motorola Inc Light emitting diode display for electronic timepiece
US6376859B1 (en) * 1998-07-29 2002-04-23 Texas Instruments Incorporated Variable porosity porous silicon isolation
KR100434537B1 (ko) * 1999-03-31 2004-06-05 삼성전자주식회사 다공질 실리콘 혹은 다공질 산화 실리콘을 이용한 두꺼운 희생층을 가진 다층 구조 웨이퍼 및 그 제조방법
EP1782474B1 (en) * 2004-08-18 2013-11-27 Corning Incorporated High strain glass/glass-ceramic containing semiconductor-on-insulator structures
US7615206B2 (en) * 2006-08-11 2009-11-10 Georgia Tech Research Corporation Methods of fabricating nanoscale-to-microscale structures
KR101375328B1 (ko) * 2007-07-27 2014-03-19 삼성에스디아이 주식회사 Ｓｉ／Ｃ 복합물, 이를 포함하는 음극활물질 및 리튬전지
US8813522B2 (en) * 2008-10-14 2014-08-26 University Of Central Florida Research Foundation, Inc. Silicon photonic fiber and method of manufacture

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090056797A1 (en) * 2007-08-28 2009-03-05 Blue Square Energy Incorporated Photovoltaic Thin-Film Solar Cell and Method Of Making The Same

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
AUTODIFFUSED BORON EMITTER FOR N-TYPE MONOCRYSTALLINE SI THIN-FILM SOLAR CELLS;Andreas Wolf等;《conference record of the 2006 IEEE 4th world conference on photovoltaic energy conversion》;20060531;第992-995页 *
Ordered Mesoporous Silicon through Magnesium Reduction of Polymer;Erik K. Richman等;《NANO LETTERS》;20080815;第8卷(第9期);摘要及实验部分、第3075页右栏反应式（1）、第3078页左栏 *

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JP2013536151A (ja) 2013-09-19
WO2012027121A2 (en) 2012-03-01
AU2011293715A1 (en) 2013-01-31
EP2609234A4 (en) 2015-11-04
JP5878535B2 (ja) 2016-03-08
WO2012027121A3 (en) 2012-08-09
US8415555B2 (en) 2013-04-09
EP2609234A2 (en) 2013-07-03
US20120052656A1 (en) 2012-03-01
TW201217290A (en) 2012-05-01
CN103069055A (zh) 2013-04-24
US20130209781A1 (en) 2013-08-15
TWI560163B (en) 2016-12-01
KR20130108531A (ko) 2013-10-04

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