AU2011293715A1 - Dimensional silica-based porous silicon structures and methods of fabrication - Google Patents

Dimensional silica-based porous silicon structures and methods of fabrication Download PDF

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Publication number
AU2011293715A1
AU2011293715A1 AU2011293715A AU2011293715A AU2011293715A1 AU 2011293715 A1 AU2011293715 A1 AU 2011293715A1 AU 2011293715 A AU2011293715 A AU 2011293715A AU 2011293715 A AU2011293715 A AU 2011293715A AU 2011293715 A1 AU2011293715 A1 AU 2011293715A1
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AU
Australia
Prior art keywords
glass substrate
silica glass
silica
porous silicon
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2011293715A
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English (en)
Inventor
Robert A. Bellman
Nicholas F. Borrelli
David A. Deneka
Shawn M. O'malley
Vitor M. Schneider
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corning Inc
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Corning Inc
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Filing date
Publication date
Application filed by Corning Inc filed Critical Corning Inc
Publication of AU2011293715A1 publication Critical patent/AU2011293715A1/en
Abandoned legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0095—Solution impregnating; Solution doping; Molecular stuffing, e.g. of porous glass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/008—Other surface treatment of glass not in the form of fibres or filaments comprising a lixiviation step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3256—Microstructure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249967—Inorganic matrix in void-containing component
    • Y10T428/249969—Of silicon-containing material [e.g., glass, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Recrystallisation Techniques (AREA)
  • Surface Treatment Of Glass (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
  • Glass Compositions (AREA)
  • Laminated Bodies (AREA)
AU2011293715A 2010-08-24 2011-08-11 Dimensional silica-based porous silicon structures and methods of fabrication Abandoned AU2011293715A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US37637910P 2010-08-24 2010-08-24
US61/376,379 2010-08-24
US13/100,593 US8415555B2 (en) 2010-08-24 2011-05-04 Dimensional silica-based porous silicon structures and methods of fabrication
US13/100,593 2011-05-04
PCT/US2011/047367 WO2012027121A2 (en) 2010-08-24 2011-08-11 Dimensional silica-based porous silicon structures and methods of fabrication

Publications (1)

Publication Number Publication Date
AU2011293715A1 true AU2011293715A1 (en) 2013-01-31

Family

ID=45697815

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2011293715A Abandoned AU2011293715A1 (en) 2010-08-24 2011-08-11 Dimensional silica-based porous silicon structures and methods of fabrication

Country Status (8)

Country Link
US (2) US8415555B2 (enExample)
EP (1) EP2609234A4 (enExample)
JP (1) JP5878535B2 (enExample)
KR (1) KR20130108531A (enExample)
CN (1) CN103069055B (enExample)
AU (1) AU2011293715A1 (enExample)
TW (1) TWI560163B (enExample)
WO (1) WO2012027121A2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
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US10629900B2 (en) 2011-05-04 2020-04-21 Corning Incorporated Porous silicon compositions and devices and methods thereof
US9285332B2 (en) 2011-12-12 2016-03-15 Korea Institute Of Science And Technology Low power consumption type gas sensor and method for manufacturing the same
KR101344738B1 (ko) * 2011-12-12 2013-12-26 한국과학기술연구원 고감도 투명 가스 센서 및 그 제조방법
KR101602418B1 (ko) * 2012-04-06 2016-03-10 코닝정밀소재 주식회사 광추출 효율이 향상된 유기 발광소자용 기판, 그 제조방법 및 이를 구비하는 유기 발광소자
US8921841B2 (en) * 2012-05-09 2014-12-30 Samsung Corning Precision Materials Co., Ltd. Porous glass substrate for displays and method of manufacturing the same
JP2017514273A (ja) 2014-04-09 2017-06-01 コーニング インコーポレイテッド リチウムイオン電池アノードのための方法及び材料
EP3224881A1 (en) 2014-11-25 2017-10-04 Corning Incorporated Method and material for lithium ion battery anodes
CN107004630A (zh) * 2014-12-10 2017-08-01 应用材料公司 用于全卷绕多孔硅形成的系统和方法
US10593592B2 (en) 2015-01-09 2020-03-17 Applied Materials, Inc. Laminate and core shell formation of silicide nanowire
CN108290740B (zh) 2015-11-25 2022-03-04 康宁股份有限公司 多孔硅组合物和装置以及其方法
CN111051256A (zh) * 2017-07-31 2020-04-21 康宁股份有限公司 具有非玻璃芯体和玻璃包封物的层压制品及其方法
CN119069675A (zh) * 2017-12-01 2024-12-03 大洲电子材料株式会社 包含氧化硅复合物的用于非水电解质二次电池的负极活性物质及其制备方法
WO2019151774A1 (ko) 2018-01-30 2019-08-08 주식회사 엘지화학 음극 활물질, 상기 음극 활물질의 제조 방법, 상기 음극 활물질을 포함하는 음극, 및 상기 음극을 포함하는 이차 전지
KR102799193B1 (ko) 2019-07-26 2025-04-23 주식회사 엘지에너지솔루션 복합 음극 활물질, 이의 제조방법, 이를 포함하는 음극 및 이차전지
CN115010380B (zh) * 2022-08-09 2022-11-15 中国华能集团清洁能源技术研究院有限公司 一种基于无序光子晶体的光伏玻璃的制备方法

Family Cites Families (8)

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US3757511A (en) * 1971-05-17 1973-09-11 Motorola Inc Light emitting diode display for electronic timepiece
US6376859B1 (en) * 1998-07-29 2002-04-23 Texas Instruments Incorporated Variable porosity porous silicon isolation
KR100434537B1 (ko) 1999-03-31 2004-06-05 삼성전자주식회사 다공질 실리콘 혹은 다공질 산화 실리콘을 이용한 두꺼운 희생층을 가진 다층 구조 웨이퍼 및 그 제조방법
US7473969B2 (en) * 2004-08-18 2009-01-06 Corning Incorporated High strain glass/glass-ceramic containing semiconductor-on-insulator structures
US7615206B2 (en) * 2006-08-11 2009-11-10 Georgia Tech Research Corporation Methods of fabricating nanoscale-to-microscale structures
KR101375328B1 (ko) * 2007-07-27 2014-03-19 삼성에스디아이 주식회사 Ｓｉ／Ｃ 복합물, 이를 포함하는 음극활물질 및 리튬전지
US20090056797A1 (en) * 2007-08-28 2009-03-05 Blue Square Energy Incorporated Photovoltaic Thin-Film Solar Cell and Method Of Making The Same
US8813522B2 (en) * 2008-10-14 2014-08-26 University Of Central Florida Research Foundation, Inc. Silicon photonic fiber and method of manufacture

Also Published As

Publication number Publication date
US8415555B2 (en) 2013-04-09
JP2013536151A (ja) 2013-09-19
TWI560163B (en) 2016-12-01
EP2609234A4 (en) 2015-11-04
TW201217290A (en) 2012-05-01
WO2012027121A2 (en) 2012-03-01
WO2012027121A3 (en) 2012-08-09
CN103069055A (zh) 2013-04-24
KR20130108531A (ko) 2013-10-04
EP2609234A2 (en) 2013-07-03
CN103069055B (zh) 2016-08-03
US20130209781A1 (en) 2013-08-15
JP5878535B2 (ja) 2016-03-08
US20120052656A1 (en) 2012-03-01

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