JP2010153823A5 - - Google Patents

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Publication number
JP2010153823A5
JP2010153823A5 JP2009262954A JP2009262954A JP2010153823A5 JP 2010153823 A5 JP2010153823 A5 JP 2010153823A5 JP 2009262954 A JP2009262954 A JP 2009262954A JP 2009262954 A JP2009262954 A JP 2009262954A JP 2010153823 A5 JP2010153823 A5 JP 2010153823A5
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JP
Japan
Prior art keywords
substrate
single crystal
crystal semiconductor
semiconductor layer
providing
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JP2009262954A
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English (en)
Japanese (ja)
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JP5611571B2 (ja
JP2010153823A (ja
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Priority to JP2009262954A priority Critical patent/JP5611571B2/ja
Priority claimed from JP2009262954A external-priority patent/JP5611571B2/ja
Publication of JP2010153823A publication Critical patent/JP2010153823A/ja
Publication of JP2010153823A5 publication Critical patent/JP2010153823A5/ja
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Publication of JP5611571B2 publication Critical patent/JP5611571B2/ja
Expired - Fee Related legal-status Critical Current
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JP2009262954A 2008-11-27 2009-11-18 半導体基板の作製方法及び半導体装置の作製方法 Expired - Fee Related JP5611571B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009262954A JP5611571B2 (ja) 2008-11-27 2009-11-18 半導体基板の作製方法及び半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008302169 2008-11-27
JP2008302169 2008-11-27
JP2009262954A JP5611571B2 (ja) 2008-11-27 2009-11-18 半導体基板の作製方法及び半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2010153823A JP2010153823A (ja) 2010-07-08
JP2010153823A5 true JP2010153823A5 (enExample) 2013-01-10
JP5611571B2 JP5611571B2 (ja) 2014-10-22

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JP2009262954A Expired - Fee Related JP5611571B2 (ja) 2008-11-27 2009-11-18 半導体基板の作製方法及び半導体装置の作製方法

Country Status (3)

Country Link
US (1) US8043935B2 (enExample)
JP (1) JP5611571B2 (enExample)
KR (1) KR101582247B1 (enExample)

Families Citing this family (17)

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JP2954057B2 (ja) 1996-12-27 1999-09-27 株式会社リヒトラブ 表 紙
US8048754B2 (en) * 2008-09-29 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate and method for manufacturing single crystal semiconductor layer
JP2010114431A (ja) * 2008-10-10 2010-05-20 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法
US20110073967A1 (en) * 2009-08-28 2011-03-31 Analog Devices, Inc. Apparatus and method of forming a mems acoustic transducer with layer transfer processes
WO2011025939A1 (en) * 2009-08-28 2011-03-03 Analog Devices, Inc. Dual single-crystal backplate microphone system and method of fabricating same
JP5755931B2 (ja) 2010-04-28 2015-07-29 株式会社半導体エネルギー研究所 半導体膜の作製方法、電極の作製方法、２次電池の作製方法、および太陽電池の作製方法
KR101089948B1 (ko) * 2010-04-30 2011-12-05 삼성전기주식회사 회로기판 및 이의 제조방법
JP5912404B2 (ja) 2010-10-29 2016-04-27 株式会社半導体エネルギー研究所 光電変換装置
FR2967813B1 (fr) 2010-11-18 2013-10-04 Soitec Silicon On Insulator Procédé de réalisation d'une structure a couche métallique enterrée
DE102011080009A1 (de) * 2011-07-28 2013-01-31 Robert Bosch Gmbh Dünnschicht-Solarzelle
FR2998089A1 (fr) * 2012-11-09 2014-05-16 Soitec Silicon On Insulator Procede de transfert de couche
FR3061802B1 (fr) * 2017-01-11 2019-08-16 Soitec Substrat pour capteur d'image de type face avant et procede de fabrication d'un tel substrat
TWI692869B (zh) * 2019-05-03 2020-05-01 世界先進積體電路股份有限公司 基底及其製造方法
FR3098643B1 (fr) * 2019-07-09 2023-01-13 Commissariat Energie Atomique Fabrication d'un dispositif photosensible à semiconducteur
KR102590568B1 (ko) 2021-07-06 2023-10-18 한국과학기술연구원 이종 접합 반도체 기판, 그의 제조방법 및 그를 이용한 전자소자
KR102793509B1 (ko) 2022-11-29 2025-04-11 한국과학기술연구원 이종 접합 반도체 유연기판, 그의 제조방법 및 그를 이용한 전자소자
KR20240080377A (ko) 2022-11-30 2024-06-07 한국과학기술연구원 유전특성이 우수한 이종 접합 반도체 기판, 그의 제조방법 및 그를 이용한 전자소자

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FR2855909B1 (fr) * 2003-06-06 2005-08-26 Soitec Silicon On Insulator Procede d'obtention concomitante d'au moins une paire de structures comprenant au moins une couche utile reportee sur un substrat
JP4771510B2 (ja) * 2004-06-23 2011-09-14 キヤノン株式会社 半導体層の製造方法及び基板の製造方法
JP2006216896A (ja) * 2005-02-07 2006-08-17 Canon Inc 太陽電池の製造方法
US20070063306A1 (en) * 2005-09-22 2007-03-22 Intel Corporation Multiple crystal orientations on the same substrate
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WO2008126706A1 (en) * 2007-04-06 2008-10-23 Semiconductor Energy Laboratory Co., Ltd. Photovoltaic device and method for manufacturing the same
US7790563B2 (en) 2007-07-13 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device and method for manufacturing semiconductor device
US7795114B2 (en) 2007-08-10 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of SOI substrate and semiconductor device
US7781308B2 (en) 2007-12-03 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
CN101504930B (zh) * 2008-02-06 2013-10-16 株式会社半导体能源研究所 Soi衬底的制造方法
US8048754B2 (en) 2008-09-29 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate and method for manufacturing single crystal semiconductor layer

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