JP2014072418A5 - - Google Patents

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Publication number
JP2014072418A5
JP2014072418A5 JP2012218000A JP2012218000A JP2014072418A5 JP 2014072418 A5 JP2014072418 A5 JP 2014072418A5 JP 2012218000 A JP2012218000 A JP 2012218000A JP 2012218000 A JP2012218000 A JP 2012218000A JP 2014072418 A5 JP2014072418 A5 JP 2014072418A5
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JP
Japan
Prior art keywords
electrode
insulating film
semiconductor
semiconductor device
connection region
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Application number
JP2012218000A
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English (en)
Japanese (ja)
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JP6074985B2 (ja
JP2014072418A (ja
Filing date
Publication date
Priority claimed from JP2012218000A external-priority patent/JP6074985B2/ja
Priority to JP2012218000A priority Critical patent/JP6074985B2/ja
Application filed filed Critical
Priority to US14/017,816 priority patent/US9093575B2/en
Priority to CN201310429001.3A priority patent/CN103715175B/zh
Priority to CN201710447901.9A priority patent/CN107275354B/zh
Publication of JP2014072418A publication Critical patent/JP2014072418A/ja
Publication of JP2014072418A5 publication Critical patent/JP2014072418A5/ja
Priority to US14/743,299 priority patent/US9577005B2/en
Priority to US15/403,359 priority patent/US9947710B2/en
Publication of JP6074985B2 publication Critical patent/JP6074985B2/ja
Application granted granted Critical
Priority to US15/918,103 priority patent/US10319775B2/en
Priority to US16/137,600 priority patent/US10615214B2/en
Priority to US16/830,618 priority patent/US10930697B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012218000A 2012-09-28 2012-09-28 半導体装置、固体撮像装置、および半導体装置の製造方法 Expired - Fee Related JP6074985B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2012218000A JP6074985B2 (ja) 2012-09-28 2012-09-28 半導体装置、固体撮像装置、および半導体装置の製造方法
US14/017,816 US9093575B2 (en) 2012-09-28 2013-09-04 Semiconductor device and solid-state imaging device with tantalum oxide layer formed by diffusing a material of an electrode of necessity or a counter electrode
CN201310429001.3A CN103715175B (zh) 2012-09-28 2013-09-18 半导体器件、半导体器件制造方法以及固体摄像装置
CN201710447901.9A CN107275354B (zh) 2012-09-28 2013-09-18 半导体器件
US14/743,299 US9577005B2 (en) 2012-09-28 2015-06-18 Semiconductor device and solid-state imaging device with tantalum oxide layer formed by diffusing a material of an electrode of necessity or a counter electrode
US15/403,359 US9947710B2 (en) 2012-09-28 2017-01-11 Semiconductor device, solid-state imaging device with tantalum oxide layer formed by diffusing a material of an electrode of necessity or a counter electrode
US15/918,103 US10319775B2 (en) 2012-09-28 2018-03-12 Semiconductor device, solid-state imaging device with tantalum oxide layer formed by diffusing a material of an electrode of necessity or a counter electrode
US16/137,600 US10615214B2 (en) 2012-09-28 2018-09-21 Semiconductor device, solid-state imaging device with tantalum oxide layer formed by diffusing a material of an electrode of necessity or a counter electrode
US16/830,618 US10930697B2 (en) 2012-09-28 2020-03-26 Semiconductor device, solid-state imaging device with tantalum oxide layer formed by diffusing a material of an electrode of necessity or a counter electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012218000A JP6074985B2 (ja) 2012-09-28 2012-09-28 半導体装置、固体撮像装置、および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2014072418A JP2014072418A (ja) 2014-04-21
JP2014072418A5 true JP2014072418A5 (enExample) 2015-04-16
JP6074985B2 JP6074985B2 (ja) 2017-02-08

Family

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Family Applications (1)

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JP2012218000A Expired - Fee Related JP6074985B2 (ja) 2012-09-28 2012-09-28 半導体装置、固体撮像装置、および半導体装置の製造方法

Country Status (3)

Country Link
US (6) US9093575B2 (enExample)
JP (1) JP6074985B2 (enExample)
CN (2) CN107275354B (enExample)

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