JP6074985B2 - 半導体装置、固体撮像装置、および半導体装置の製造方法 - Google Patents

半導体装置、固体撮像装置、および半導体装置の製造方法 Download PDF

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JP6074985B2
JP6074985B2 JP2012218000A JP2012218000A JP6074985B2 JP 6074985 B2 JP6074985 B2 JP 6074985B2 JP 2012218000 A JP2012218000 A JP 2012218000A JP 2012218000 A JP2012218000 A JP 2012218000A JP 6074985 B2 JP6074985 B2 JP 6074985B2
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electrode
insulating film
semiconductor
layer
semiconductor device
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Expired - Fee Related
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JP2012218000A
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Japanese (ja)
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JP2014072418A5 (enExample
JP2014072418A (ja
Inventor
孝司 横山
孝司 横山
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Sony Corp
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Sony Corp
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Priority to JP2012218000A priority Critical patent/JP6074985B2/ja
Priority to US14/017,816 priority patent/US9093575B2/en
Priority to CN201310429001.3A priority patent/CN103715175B/zh
Priority to CN201710447901.9A priority patent/CN107275354B/zh
Publication of JP2014072418A publication Critical patent/JP2014072418A/ja
Publication of JP2014072418A5 publication Critical patent/JP2014072418A5/ja
Priority to US14/743,299 priority patent/US9577005B2/en
Priority to US15/403,359 priority patent/US9947710B2/en
Application granted granted Critical
Publication of JP6074985B2 publication Critical patent/JP6074985B2/ja
Priority to US15/918,103 priority patent/US10319775B2/en
Priority to US16/137,600 priority patent/US10615214B2/en
Priority to US16/830,618 priority patent/US10930697B2/en
Expired - Fee Related legal-status Critical Current
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    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
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    • H10F39/80—Constructional details of image sensors
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  • Engineering & Computer Science (AREA)
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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2012218000A 2012-09-28 2012-09-28 半導体装置、固体撮像装置、および半導体装置の製造方法 Expired - Fee Related JP6074985B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2012218000A JP6074985B2 (ja) 2012-09-28 2012-09-28 半導体装置、固体撮像装置、および半導体装置の製造方法
US14/017,816 US9093575B2 (en) 2012-09-28 2013-09-04 Semiconductor device and solid-state imaging device with tantalum oxide layer formed by diffusing a material of an electrode of necessity or a counter electrode
CN201310429001.3A CN103715175B (zh) 2012-09-28 2013-09-18 半导体器件、半导体器件制造方法以及固体摄像装置
CN201710447901.9A CN107275354B (zh) 2012-09-28 2013-09-18 半导体器件
US14/743,299 US9577005B2 (en) 2012-09-28 2015-06-18 Semiconductor device and solid-state imaging device with tantalum oxide layer formed by diffusing a material of an electrode of necessity or a counter electrode
US15/403,359 US9947710B2 (en) 2012-09-28 2017-01-11 Semiconductor device, solid-state imaging device with tantalum oxide layer formed by diffusing a material of an electrode of necessity or a counter electrode
US15/918,103 US10319775B2 (en) 2012-09-28 2018-03-12 Semiconductor device, solid-state imaging device with tantalum oxide layer formed by diffusing a material of an electrode of necessity or a counter electrode
US16/137,600 US10615214B2 (en) 2012-09-28 2018-09-21 Semiconductor device, solid-state imaging device with tantalum oxide layer formed by diffusing a material of an electrode of necessity or a counter electrode
US16/830,618 US10930697B2 (en) 2012-09-28 2020-03-26 Semiconductor device, solid-state imaging device with tantalum oxide layer formed by diffusing a material of an electrode of necessity or a counter electrode

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JP2012218000A JP6074985B2 (ja) 2012-09-28 2012-09-28 半導体装置、固体撮像装置、および半導体装置の製造方法

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JP2014072418A JP2014072418A (ja) 2014-04-21
JP2014072418A5 JP2014072418A5 (enExample) 2015-04-16
JP6074985B2 true JP6074985B2 (ja) 2017-02-08

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JP6074985B2 (ja) 2012-09-28 2017-02-08 ソニー株式会社 半導体装置、固体撮像装置、および半導体装置の製造方法
JP2014194976A (ja) * 2013-03-28 2014-10-09 Nippon Hoso Kyokai <Nhk> 設計装置、設計方法及びプログラム
KR101729378B1 (ko) * 2014-05-30 2017-04-21 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 반도체 디바이스 및 반도체 디바이스 제조 방법
WO2016073049A1 (en) * 2014-08-11 2016-05-12 Massachusetts Institute Of Technology Semiconductor structures for assembly in multi-layer semiconductor devices including at least one semiconductor structure
JP6766808B2 (ja) * 2015-05-18 2020-10-14 ソニー株式会社 半導体装置および撮像装置
KR102653044B1 (ko) * 2015-09-01 2024-04-01 소니그룹주식회사 적층체
US10020336B2 (en) 2015-12-28 2018-07-10 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device using three dimentional (3D) integration
WO2017169480A1 (ja) 2016-03-31 2017-10-05 株式会社ニコン 撮像素子および撮像装置
US10277227B2 (en) * 2016-05-31 2019-04-30 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device layout
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