JP2019525488A5 - - Google Patents

Download PDF

Info

Publication number
JP2019525488A5
JP2019525488A5 JP2019507768A JP2019507768A JP2019525488A5 JP 2019525488 A5 JP2019525488 A5 JP 2019525488A5 JP 2019507768 A JP2019507768 A JP 2019507768A JP 2019507768 A JP2019507768 A JP 2019507768A JP 2019525488 A5 JP2019525488 A5 JP 2019525488A5
Authority
JP
Japan
Prior art keywords
die
layer
mold compound
contacts
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2019507768A
Other languages
English (en)
Japanese (ja)
Other versions
JP7037544B2 (ja
JP2019525488A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2017/046758 external-priority patent/WO2018031995A1/en
Publication of JP2019525488A publication Critical patent/JP2019525488A/ja
Publication of JP2019525488A5 publication Critical patent/JP2019525488A5/ja
Priority to JP2022032477A priority Critical patent/JP7265052B2/ja
Application granted granted Critical
Publication of JP7037544B2 publication Critical patent/JP7037544B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2019507768A 2016-08-12 2017-08-14 性能を向上させたウエハレベルパッケージ Active JP7037544B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022032477A JP7265052B2 (ja) 2016-08-12 2022-03-03 性能を向上させたウエハレベルパッケージ

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201662374318P 2016-08-12 2016-08-12
US201662374332P 2016-08-12 2016-08-12
US201662374439P 2016-08-12 2016-08-12
US62/374,439 2016-08-12
US62/374,318 2016-08-12
US62/374,332 2016-08-12
PCT/US2017/046758 WO2018031995A1 (en) 2016-08-12 2017-08-14 Wafer-level package with enhanced performance

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022032477A Division JP7265052B2 (ja) 2016-08-12 2022-03-03 性能を向上させたウエハレベルパッケージ

Publications (3)

Publication Number Publication Date
JP2019525488A JP2019525488A (ja) 2019-09-05
JP2019525488A5 true JP2019525488A5 (enExample) 2020-09-24
JP7037544B2 JP7037544B2 (ja) 2022-03-16

Family

ID=59684109

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2019507768A Active JP7037544B2 (ja) 2016-08-12 2017-08-14 性能を向上させたウエハレベルパッケージ
JP2022032477A Active JP7265052B2 (ja) 2016-08-12 2022-03-03 性能を向上させたウエハレベルパッケージ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2022032477A Active JP7265052B2 (ja) 2016-08-12 2022-03-03 性能を向上させたウエハレベルパッケージ

Country Status (6)

Country Link
US (2) US10109550B2 (enExample)
EP (1) EP3497717A1 (enExample)
JP (2) JP7037544B2 (enExample)
CN (2) CN109844938B (enExample)
SG (1) SG11201901194SA (enExample)
WO (1) WO2018031995A1 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10085352B2 (en) 2014-10-01 2018-09-25 Qorvo Us, Inc. Method for manufacturing an integrated circuit package
US10773952B2 (en) 2016-05-20 2020-09-15 Qorvo Us, Inc. Wafer-level package with enhanced performance
US10784149B2 (en) 2016-05-20 2020-09-22 Qorvo Us, Inc. Air-cavity module with enhanced device isolation
US10103080B2 (en) 2016-06-10 2018-10-16 Qorvo Us, Inc. Thermally enhanced semiconductor package with thermal additive and process for making the same
CN109844938B (zh) 2016-08-12 2023-07-18 Qorvo美国公司 具有增强性能的晶片级封装
CN109716511A (zh) * 2016-08-12 2019-05-03 Qorvo美国公司 具有增强性能的晶片级封装
US10109502B2 (en) 2016-09-12 2018-10-23 Qorvo Us, Inc. Semiconductor package with reduced parasitic coupling effects and process for making the same
US10068831B2 (en) 2016-12-09 2018-09-04 Qorvo Us, Inc. Thermally enhanced semiconductor package and process for making the same
US10490471B2 (en) 2017-07-06 2019-11-26 Qorvo Us, Inc. Wafer-level packaging for enhanced performance
US10784233B2 (en) 2017-09-05 2020-09-22 Qorvo Us, Inc. Microelectronics package with self-aligned stacked-die assembly
US11152363B2 (en) 2018-03-28 2021-10-19 Qorvo Us, Inc. Bulk CMOS devices with enhanced performance and methods of forming the same utilizing bulk CMOS process
WO2019195428A1 (en) 2018-04-04 2019-10-10 Qorvo Us, Inc. Gallium-nitride-based module with enhanced electrical performance and process for making the same
US10679946B2 (en) * 2018-04-10 2020-06-09 Wispry, Inc. Methods and devices for solderless integration of multiple semiconductor dies on flexible substrates
US12046505B2 (en) 2018-04-20 2024-07-23 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same utilizing localized SOI formation
US10804246B2 (en) 2018-06-11 2020-10-13 Qorvo Us, Inc. Microelectronics package with vertically stacked dies
CN118213279A (zh) 2018-07-02 2024-06-18 Qorvo美国公司 Rf半导体装置及其制造方法
US11069590B2 (en) * 2018-10-10 2021-07-20 Qorvo Us, Inc. Wafer-level fan-out package with enhanced performance
US10964554B2 (en) 2018-10-10 2021-03-30 Qorvo Us, Inc. Wafer-level fan-out package with enhanced performance
US11646242B2 (en) 2018-11-29 2023-05-09 Qorvo Us, Inc. Thermally enhanced semiconductor package with at least one heat extractor and process for making the same
US12057374B2 (en) 2019-01-23 2024-08-06 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US11387157B2 (en) 2019-01-23 2022-07-12 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
WO2020153983A1 (en) 2019-01-23 2020-07-30 Qorvo Us, Inc. Rf semiconductor device and manufacturing method thereof
US12046483B2 (en) 2019-01-23 2024-07-23 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US12046570B2 (en) 2019-01-23 2024-07-23 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US12125825B2 (en) 2019-01-23 2024-10-22 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US11024616B2 (en) * 2019-05-16 2021-06-01 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure and method of manufacturing the same
US11139268B2 (en) * 2019-08-06 2021-10-05 Advanced Semiconductor Engineering, Inc. Semiconductor package structure and method of manufacturing the same
CN110544679B (zh) * 2019-08-30 2021-05-18 颀中科技（苏州）有限公司 芯片重布线结构及其制备方法
US12074086B2 (en) 2019-11-01 2024-08-27 Qorvo Us, Inc. RF devices with nanotube particles for enhanced performance and methods of forming the same
US11646289B2 (en) 2019-12-02 2023-05-09 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US11923238B2 (en) 2019-12-12 2024-03-05 Qorvo Us, Inc. Method of forming RF devices with enhanced performance including attaching a wafer to a support carrier by a bonding technique without any polymer adhesive
US12129168B2 (en) * 2019-12-23 2024-10-29 Qorvo Us, Inc. Microelectronics package with vertically stacked MEMS device and controller device
US11380649B2 (en) * 2020-09-08 2022-07-05 Sj Semiconductor (Jiangyin) Corporation Fan-out wafer-level packaging structure and method packaging the same
CN116583949A (zh) 2020-12-11 2023-08-11 Qorvo美国公司 多级3d堆叠式封装和其形成方法
US12062571B2 (en) 2021-03-05 2024-08-13 Qorvo Us, Inc. Selective etching process for SiGe and doped epitaxial silicon
US12354997B2 (en) * 2021-08-31 2025-07-08 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure and manufacturing method thereof
WO2024106030A1 (ja) * 2022-11-15 2024-05-23 株式会社村田製作所 モジュール及びモジュールの製造方法
US20250117561A1 (en) * 2023-10-06 2025-04-10 Applied Materials, Inc. Structure and technique of photo-defined semiconductor device with selective dielectric constant reduction

Family Cites Families (255)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS505733Y1 (enExample) 1970-02-23 1975-02-18
JPS6013257B2 (ja) 1976-02-20 1985-04-05 松下電器産業株式会社 二次電子増倍体およびその製造方法
US4366202A (en) 1981-06-19 1982-12-28 Kimberly-Clark Corporation Ceramic/organic web
US5061663A (en) 1986-09-04 1991-10-29 E. I. Du Pont De Nemours And Company AlN and AlN-containing composites
US5069626A (en) 1987-07-01 1991-12-03 Western Digital Corporation Plated plastic castellated interconnect for electrical components
US5013681A (en) 1989-09-29 1991-05-07 The United States Of America As Represented By The Secretary Of The Navy Method of producing a thin silicon-on-insulator layer
US5362972A (en) 1990-04-20 1994-11-08 Hitachi, Ltd. Semiconductor device using whiskers
JP2821830B2 (ja) 1992-05-14 1998-11-05 セイコーインスツルメンツ株式会社 半導体薄膜素子その応用装置および半導体薄膜素子の製造方法
DE69333545T2 (de) 1992-12-24 2005-08-25 Canon K.K. Kunststoffzusatzmittel, Kunststoffzusammensetzung und Kunststoffformmasse, die dieses enthalten
US5459368A (en) 1993-08-06 1995-10-17 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device mounted module
DE4329696C2 (de) 1993-09-02 1995-07-06 Siemens Ag Auf Leiterplatten oberflächenmontierbares Multichip-Modul mit SMD-fähigen Anschlußelementen
US5391257A (en) 1993-12-10 1995-02-21 Rockwell International Corporation Method of transferring a thin film to an alternate substrate
EP0759231B1 (de) 1994-05-02 1998-12-23 SIEMENS MATSUSHITA COMPONENTS GmbH & CO. KG Verkapselung für elektronische bauelemente
US6124179A (en) 1996-09-05 2000-09-26 Adamic, Jr.; Fred W. Inverted dielectric isolation process
JP3301262B2 (ja) 1995-03-28 2002-07-15 松下電器産業株式会社 弾性表面波装置
US5729075A (en) 1995-06-12 1998-03-17 National Semiconductor Corporation Tuneable microelectromechanical system resonator
US6013948A (en) 1995-11-27 2000-01-11 Micron Technology, Inc. Stackable chip scale semiconductor package with mating contacts on opposed surfaces
EP0794616B1 (en) 1996-03-08 2003-01-29 Matsushita Electric Industrial Co., Ltd. An electronic part and a method of production thereof
US5709960A (en) 1996-06-21 1998-01-20 Motorola, Inc. Mold compound
US6250192B1 (en) 1996-11-12 2001-06-26 Micron Technology, Inc. Method for sawing wafers employing multiple indexing techniques for multiple die dimensions
US6117705A (en) 1997-04-18 2000-09-12 Amkor Technology, Inc. Method of making integrated circuit package having adhesive bead supporting planar lid above planar substrate
JPH11220077A (ja) 1997-10-15 1999-08-10 Toshiba Corp 半導体装置および半導体装置の製造方法
KR100253363B1 (ko) 1997-12-02 2000-04-15 김영환 반도체 패키지용 기판과 그 기판을 이용한 랜드 그리드 어레이반도체 패키지 및 그들의 제조 방법
JP3565547B2 (ja) 1998-07-31 2004-09-15 シャープ株式会社 カラー液晶表示装置およびその製造方法
US6236061B1 (en) 1999-01-08 2001-05-22 Lakshaman Mahinda Walpita Semiconductor crystallization on composite polymer substrates
US6271469B1 (en) 1999-11-12 2001-08-07 Intel Corporation Direct build-up layer on an encapsulated die package
US6154366A (en) 1999-11-23 2000-11-28 Intel Corporation Structures and processes for fabricating moisture resistant chip-on-flex packages
JP4528397B2 (ja) 1999-12-17 2010-08-18 ポリマテック株式会社 接着方法および電子部品
US6426559B1 (en) 2000-06-29 2002-07-30 National Semiconductor Corporation Miniature 3D multi-chip module
JP2002093957A (ja) 2000-09-11 2002-03-29 Sony Corp 電子回路装置およびその製造方法
US6713859B1 (en) 2000-09-13 2004-03-30 Intel Corporation Direct build-up layer on an encapsulated die package having a moisture barrier structure
US6423570B1 (en) 2000-10-18 2002-07-23 Intel Corporation Method to protect an encapsulated die package during back grinding with a solder metallization layer and devices formed thereby
US6377112B1 (en) 2000-12-05 2002-04-23 Semiconductor Components Industries Llc Circuit and method for PMOS device N-well bias control
US20020070443A1 (en) 2000-12-08 2002-06-13 Xiao-Chun Mu Microelectronic package having an integrated heat sink and build-up layers
US6555906B2 (en) 2000-12-15 2003-04-29 Intel Corporation Microelectronic package having a bumpless laminated interconnection layer
JP4673986B2 (ja) 2001-02-23 2011-04-20 星和電機株式会社 表面実装方発光ダイオードの製造方法
US6703688B1 (en) 2001-03-02 2004-03-09 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6943429B1 (en) 2001-03-08 2005-09-13 Amkor Technology, Inc. Wafer having alignment marks extending from a first to a second surface of the wafer
US6706553B2 (en) 2001-03-26 2004-03-16 Intel Corporation Dispensing process for fabrication of microelectronic packages
US6596570B2 (en) 2001-06-06 2003-07-22 International Business Machines Corporation SOI device with reduced junction capacitance
US7332819B2 (en) 2002-01-09 2008-02-19 Micron Technology, Inc. Stacked die in die BGA package
US6841413B2 (en) 2002-01-07 2005-01-11 Intel Corporation Thinned die integrated circuit package
DE10206919A1 (de) 2002-02-19 2003-08-28 Infineon Technologies Ag Verfahren zur Erzeugung einer Abdeckung, Verfahren zum Herstellen eines gehäusten Bauelements
KR100476901B1 (ko) 2002-05-22 2005-03-17 삼성전자주식회사 소이 반도체기판의 형성방법
FR2842832B1 (fr) 2002-07-24 2006-01-20 Lumilog Procede de realisation par epitaxie en phase vapeur d'un film de nitrure de gallium a faible densite de defaut
US7042072B1 (en) 2002-08-02 2006-05-09 Amkor Technology, Inc. Semiconductor package and method of manufacturing the same which reduces warpage
US20040021152A1 (en) 2002-08-05 2004-02-05 Chanh Nguyen Ga/A1GaN Heterostructure Field Effect Transistor with dielectric recessed gate
US7710771B2 (en) 2002-11-20 2010-05-04 The Regents Of The University Of California Method and apparatus for capacitorless double-gate storage
AU2003300040A1 (en) 2002-12-31 2004-07-29 Massachusetts Institute Of Technology Multi-layer integrated semiconductor structure having an electrical shielding portion
US6855606B2 (en) 2003-02-20 2005-02-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor nano-rod devices
KR100486627B1 (ko) 2003-02-21 2005-05-03 엘지전자 주식회사 반도체 패키지
JP2004273604A (ja) 2003-03-06 2004-09-30 Fujitsu Ltd 半導体装置と半導体電子部品との製造方法と半導体電子部品
JP3917946B2 (ja) 2003-03-11 2007-05-23 富士通株式会社 積層型半導体装置
US6864156B1 (en) 2003-04-04 2005-03-08 Xilinx, Inc. Semiconductor wafer with well contacts on back side
JP3826898B2 (ja) 2003-04-22 2006-09-27 松下電工株式会社 電子部品の製造方法及び半導体装置
US7109635B1 (en) 2003-06-11 2006-09-19 Sawtek, Inc. Wafer level packaging of materials with different coefficients of thermal expansion
US7596849B1 (en) 2003-06-11 2009-10-06 Triquint Semiconductor, Inc. Method of assembling a wafer-level package filter
JPWO2005010987A1 (ja) 2003-07-24 2006-09-14 松下電器産業株式会社 球状半導体素子埋設配線板
JP2005064188A (ja) 2003-08-11 2005-03-10 Sumitomo Electric Ind Ltd 基板の回収方法および再生方法、ならびに半導体ウエハの製造方法
JPWO2005063876A1 (ja) 2003-12-25 2007-07-19 Jsr株式会社 熱可塑性エラストマー組成物およびその製造方法並びに成形品
US7489032B2 (en) 2003-12-25 2009-02-10 Casio Computer Co., Ltd. Semiconductor device including a hard sheet to reduce warping of a base plate and method of fabricating the same
US6992400B2 (en) 2004-01-30 2006-01-31 Nokia Corporation Encapsulated electronics device with improved heat dissipation
US20050212419A1 (en) 2004-03-23 2005-09-29 Eastman Kodak Company Encapsulating oled devices
JP3925809B2 (ja) 2004-03-31 2007-06-06 カシオ計算機株式会社 半導体装置およびその製造方法
JP4398305B2 (ja) 2004-06-02 2010-01-13 カシオ計算機株式会社 半導体装置およびその製造方法
JP3801601B2 (ja) 2004-06-15 2006-07-26 シャープ株式会社 蓋部を備えた半導体ウェハの製造方法及び半導体装置の製造方法
US7238560B2 (en) 2004-07-23 2007-07-03 Cree, Inc. Methods of fabricating nitride-based transistors with a cap layer and a recessed gate
US7591958B2 (en) 2004-09-14 2009-09-22 Stmicroelectronics Sa Thin glass chip for an electronic component and manufacturing method
US20060099733A1 (en) 2004-11-09 2006-05-11 Geefay Frank S Semiconductor package and fabrication method
US7098070B2 (en) 2004-11-16 2006-08-29 International Business Machines Corporation Device and method for fabricating double-sided SOI wafer scale package with through via connections
TWI259538B (en) 2004-11-22 2006-08-01 Au Optronics Corp Thin film transistor and fabrication method thereof
US7519257B2 (en) 2004-11-24 2009-04-14 Cornell Research Foundation, Inc. Waveguide structure for guiding light in low-index material
JP4581768B2 (ja) 2005-03-16 2010-11-17 ソニー株式会社 半導体装置の製造方法
US7393770B2 (en) 2005-05-19 2008-07-01 Micron Technology, Inc. Backside method for fabricating semiconductor components with conductive interconnects
US7619347B1 (en) 2005-05-24 2009-11-17 Rf Micro Devices, Inc. Layer acoustic wave device and method of making the same
WO2006134928A1 (ja) 2005-06-16 2006-12-21 Murata Manufacturing Co., Ltd. 圧電デバイス及びその製造方法
US20080076371A1 (en) 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
CN101292341A (zh) 2005-08-26 2008-10-22 Memc电子材料有限公司 绝缘体上应变硅结构的制造方法
JP4644577B2 (ja) 2005-09-30 2011-03-02 セイコーエプソン株式会社 半導体装置および半導体装置の製造方法
US8465175B2 (en) 2005-11-29 2013-06-18 GE Lighting Solutions, LLC LED lighting assemblies with thermal overmolding
KR100996842B1 (ko) 2005-12-26 2010-11-26 샤프 가부시키가이샤 고체 촬상 소자 모듈의 제조 방법
JP4476939B2 (ja) 2006-01-12 2010-06-09 株式会社東芝 半導体装置
US20070194342A1 (en) 2006-01-12 2007-08-23 Kinzer Daniel M GaN SEMICONDUCTOR DEVICE AND PROCESS EMPLOYING GaN ON THIN SAPHIRE LAYER ON POLYCRYSTALLINE SILICON CARBIDE
US20070190747A1 (en) 2006-01-23 2007-08-16 Tessera Technologies Hungary Kft. Wafer level packaging to lidded chips
US7863727B2 (en) 2006-02-06 2011-01-04 Micron Technology, Inc. Microelectronic devices and methods for manufacturing microelectronic devices
JP4591378B2 (ja) 2006-02-21 2010-12-01 株式会社デンソー 半導体装置の製造方法
US20070243662A1 (en) 2006-03-17 2007-10-18 Johnson Donald W Packaging of MEMS devices
KR101478810B1 (ko) 2006-07-28 2015-01-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 축전 장치
US7749882B2 (en) 2006-08-23 2010-07-06 Micron Technology, Inc. Packaged microelectronic devices and methods for manufacturing packaged microelectronic devices
KR20080017965A (ko) 2006-08-23 2008-02-27 삼성전자주식회사 가요성 표시 장치용 표시판의 제조 방법
US7960218B2 (en) 2006-09-08 2011-06-14 Wisconsin Alumni Research Foundation Method for fabricating high-speed thin-film transistors
JP5018066B2 (ja) 2006-12-19 2012-09-05 信越半導体株式会社 歪Ｓｉ基板の製造方法
US7888742B2 (en) 2007-01-10 2011-02-15 International Business Machines Corporation Self-aligned metal-semiconductor alloy and metallization for sub-lithographic source and drain contacts
JP2008235490A (ja) 2007-03-19 2008-10-02 Sumitomo Bakelite Co Ltd 中空構造体の製造方法および中空構造体
US7960772B2 (en) 2007-04-26 2011-06-14 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
US8183151B2 (en) 2007-05-04 2012-05-22 Micron Technology, Inc. Methods of forming conductive vias through substrates, and structures and assemblies resulting therefrom
US20080277778A1 (en) 2007-05-10 2008-11-13 Furman Bruce K Layer Transfer Process and Functionally Enhanced Integrated Circuits Products Thereby
JP2008279567A (ja) 2007-05-11 2008-11-20 Denso Corp 半導体装置の製造方法
US7553752B2 (en) 2007-06-20 2009-06-30 Stats Chippac, Ltd. Method of making a wafer level integration package
KR20090004147A (ko) 2007-07-06 2009-01-12 삼성전자주식회사 반도체 소자 및 그 형성 방법
US20090014856A1 (en) 2007-07-10 2009-01-15 International Business Machine Corporation Microbump seal
JP5013467B2 (ja) 2007-07-18 2012-08-29 株式会社デンソー 半導体装置の製造方法
US9391588B2 (en) 2007-08-31 2016-07-12 Rf Micro Devices, Inc. MEMS vibrating structure using an orientation dependent single-crystal piezoelectric thin film layer
US9941245B2 (en) 2007-09-25 2018-04-10 Intel Corporation Integrated circuit packages including high density bump-less build up layers and a lesser density core or coreless substrate
US7704844B2 (en) 2007-10-04 2010-04-27 International Business Machines Corporation High performance MOSFET
US7868419B1 (en) 2007-10-18 2011-01-11 Rf Micro Devices, Inc. Linearity improvements of semiconductor substrate based radio frequency devices
US7790543B2 (en) 2008-01-11 2010-09-07 International Business Machines Corporation Device structures for a metal-oxide-semiconductor field effect transistor and methods of fabricating such device structures
JP4840373B2 (ja) 2008-01-31 2011-12-21 カシオ計算機株式会社 半導体装置およびその製造方法
JP4568337B2 (ja) 2008-02-22 2010-10-27 株式会社東芝 集積半導体装置
US20110102002A1 (en) 2008-04-09 2011-05-05 Riehl Bill L Electrode and sensor having carbon nanostructures
JP5415823B2 (ja) 2008-05-16 2014-02-12 株式会社デンソー 電子回路装置及びその製造方法
US7745920B2 (en) 2008-06-10 2010-06-29 Micron Technology, Inc. Packaged microelectronic devices and methods for manufacturing packaged microelectronic devices
US20100012354A1 (en) 2008-07-14 2010-01-21 Logan Brook Hedin Thermally conductive polymer based printed circuit board
US8236609B2 (en) * 2008-08-01 2012-08-07 Freescale Semiconductor, Inc. Packaging an integrated circuit die with backside metallization
US7843072B1 (en) 2008-08-12 2010-11-30 Amkor Technology, Inc. Semiconductor package having through holes
JP4638530B2 (ja) 2008-08-19 2011-02-23 日本電波工業株式会社 圧電部品及びその製造方法
US20100081237A1 (en) 2008-09-30 2010-04-01 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Integrated Circuit Assemblies and Methods for Encapsulating a Semiconductor Device
US9059174B2 (en) 2008-11-05 2015-06-16 Stmicroelectronics, Inc. Method to reduce metal fuse thickness without extra mask
JP5161732B2 (ja) 2008-11-11 2013-03-13 新光電気工業株式会社 半導体装置の製造方法
JP5468242B2 (ja) 2008-11-21 2014-04-09 株式会社東芝 Ｍｅｍｓパッケージおよびｍｅｍｓパッケージの製造方法
US7927904B2 (en) 2009-01-05 2011-04-19 Dalsa Semiconductor Inc. Method of making BIOMEMS devices
JP5556072B2 (ja) 2009-01-07 2014-07-23 ソニー株式会社 半導体装置、その製造方法、ミリ波誘電体内伝送装置
SG163445A1 (en) * 2009-01-12 2010-08-30 Kolan Ravi Kanth Method for manufacturing a low cost three dimensional stack package and resulting structures using through silicon vias and assemblies
JP4984179B2 (ja) 2009-02-06 2012-07-25 ソニー株式会社 半導体装置
US8508056B2 (en) 2009-06-16 2013-08-13 Dongbu Hitek Co., Ltd. Heat releasing semiconductor package, method for manufacturing the same, and display apparatus including the same
JP5175803B2 (ja) 2009-07-01 2013-04-03 新光電気工業株式会社 半導体装置の製造方法
US8921168B2 (en) 2009-07-15 2014-12-30 Silanna Semiconductor U.S.A., Inc. Thin integrated circuit chip-on-board assembly and method of making
US8432016B1 (en) 2009-07-29 2013-04-30 Rf Micro Devices, Inc. Stacked body-contacted field effect transistor
ES2785075T3 (es) 2009-07-30 2020-10-05 Qualcomm Inc Sistemas en paquetes
WO2011022397A1 (en) 2009-08-17 2011-02-24 First Solar, Inc. Barrier layer
US8164158B2 (en) 2009-09-11 2012-04-24 Stats Chippac, Ltd. Semiconductor device and method of forming integrated passive device
US8362599B2 (en) 2009-09-24 2013-01-29 Qualcomm Incorporated Forming radio frequency integrated circuits
WO2011060558A1 (en) 2009-11-18 2011-05-26 Sensirion Ag Sensor mounted in flip-chip technology on a substrate
US9202769B2 (en) * 2009-11-25 2015-12-01 Stats Chippac, Ltd. Semiconductor device and method of forming thermal lid for balancing warpage and thermal management
US8030145B2 (en) 2010-01-08 2011-10-04 International Business Machines Corporation Back-gated fully depleted SOI transistor
US9576919B2 (en) 2011-12-30 2017-02-21 Deca Technologies Inc. Semiconductor device and method comprising redistribution layers
US9196509B2 (en) 2010-02-16 2015-11-24 Deca Technologies Inc Semiconductor device and method of adaptive patterning for panelized packaging
JP5544986B2 (ja) 2010-04-01 2014-07-09 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法、及び貼り合わせｓｏｉウェーハ
US9431316B2 (en) 2010-05-04 2016-08-30 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming channels in back surface of FO-WLCSP for heat dissipation
JP5584011B2 (ja) 2010-05-10 2014-09-03 新光電気工業株式会社 半導体パッケージの製造方法
JP2011243596A (ja) 2010-05-14 2011-12-01 Panasonic Corp パッケージ部品の製造方法およびパッケージ部品
JP2011248072A (ja) 2010-05-26 2011-12-08 Hitachi Displays Ltd 画像表示装置の製造方法
US8557679B2 (en) 2010-06-30 2013-10-15 Corning Incorporated Oxygen plasma conversion process for preparing a surface for bonding
KR101698932B1 (ko) 2010-08-17 2017-01-23 삼성전자 주식회사 반도체 패키지 및 그 제조방법
US8551798B2 (en) 2010-09-21 2013-10-08 Taiwan Semiconductor Manufacturing Company, Ltd. Microstructure with an enhanced anchor
US20120094418A1 (en) 2010-10-18 2012-04-19 Triquint Semiconductor, Inc. Wafer Level Package and Manufacturing Method Using Photodefinable Polymer for Enclosing Acoustic Devices
US8716051B2 (en) 2010-10-21 2014-05-06 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS device with release aperture
CN102456737B (zh) 2010-10-27 2016-03-30 中国科学院微电子研究所 半导体结构及其制造方法
KR20120053332A (ko) 2010-11-17 2012-05-25 삼성전자주식회사 반도체 패키지 및 이의 제조 방법
US8492210B2 (en) 2010-12-17 2013-07-23 Institute of Microelectronics, Chinese Academy of Sciences Transistor, semiconductor device comprising the transistor and method for manufacturing the same
US8716800B2 (en) 2010-12-31 2014-05-06 Institute of Microelectronics, Chinese Academy of Sciences Semiconductor structure and method for manufacturing the same
JP5715835B2 (ja) 2011-01-25 2015-05-13 新光電気工業株式会社 半導体パッケージ及びその製造方法
US8420447B2 (en) 2011-03-23 2013-04-16 Stats Chippac Ltd. Integrated circuit packaging system with flipchip leadframe and method of manufacture thereof
US8399957B2 (en) 2011-04-08 2013-03-19 International Business Machines Corporation Dual-depth self-aligned isolation structure for a back gate electrode
US8507989B2 (en) 2011-05-16 2013-08-13 International Business Machine Corporation Extremely thin semiconductor-on-insulator (ETSOI) FET with a back gate and reduced parasitic capacitance
US8415743B2 (en) 2011-05-24 2013-04-09 International Business Machines Corporation ETSOI CMOS with back gates
US9633854B2 (en) 2011-06-23 2017-04-25 Institute of Microelectronics, Chinese Academy of Sciences MOSFET and method for manufacturing the same
US8772853B2 (en) 2011-07-12 2014-07-08 The Regents Of The University Of California All graphene flash memory device
US9390364B2 (en) 2011-08-08 2016-07-12 Féinics Amatech Teoranta Transponder chip module with coupling frame on a common substrate for secure and non-secure smartcards and tags
US20130037929A1 (en) * 2011-08-09 2013-02-14 Kay S. Essig Stackable wafer level packages and related methods
US9064883B2 (en) 2011-08-25 2015-06-23 Intel Mobile Communications GmbH Chip with encapsulated sides and exposed surface
CN102983116B (zh) 2011-09-07 2015-09-30 中国科学院微电子研究所 半导体衬底、具有该半导体衬底的集成电路及其制造方法
US8963321B2 (en) 2011-09-12 2015-02-24 Infineon Technologies Ag Semiconductor device including cladded base plate
CN103000671B (zh) 2011-09-16 2015-07-15 中国科学院微电子研究所 Mosfet及其制造方法
US8803242B2 (en) 2011-09-19 2014-08-12 Eta Semiconductor Inc. High mobility enhancement mode FET
US9368429B2 (en) 2011-10-25 2016-06-14 Intel Corporation Interposer for hermetic sealing of sensor chips and for their integration with integrated circuit chips
US9190391B2 (en) 2011-10-26 2015-11-17 Maxim Integrated Products, Inc. Three-dimensional chip-to-wafer integration
US8664044B2 (en) 2011-11-02 2014-03-04 Stmicroelectronics Pte Ltd. Method of fabricating land grid array semiconductor package
US8643148B2 (en) 2011-11-30 2014-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Chip-on-Wafer structures and methods for forming the same
KR20130064289A (ko) 2011-12-08 2013-06-18 에스케이하이닉스 주식회사 반도체 소자 및 그 제조 방법
US20130193445A1 (en) 2012-01-26 2013-08-01 International Business Machines Corporation Soi structures including a buried boron nitride dielectric
JP2013162096A (ja) 2012-02-08 2013-08-19 Fujitsu Semiconductor Ltd 半導体チップの製造方法及びラミネート装置
KR101918608B1 (ko) * 2012-02-28 2018-11-14 삼성전자 주식회사 반도체 패키지
US8835978B2 (en) 2012-05-14 2014-09-16 Infineon Technologies Ag Lateral transistor on polymer
US8698323B2 (en) * 2012-06-18 2014-04-15 Invensas Corporation Microelectronic assembly tolerant to misplacement of microelectronic elements therein
US8878360B2 (en) 2012-07-13 2014-11-04 Intel Mobile Communications GmbH Stacked fan-out semiconductor chip
US8653626B2 (en) * 2012-07-18 2014-02-18 Taiwan Semiconductor Manufacturing Company, Ltd. Package structures including a capacitor and methods of forming the same
US8963336B2 (en) 2012-08-03 2015-02-24 Samsung Electronics Co., Ltd. Semiconductor packages, methods of manufacturing the same, and semiconductor package structures including the same
KR101970291B1 (ko) 2012-08-03 2019-04-18 삼성전자주식회사 반도체 패키지의 제조 방법
JP6024400B2 (ja) 2012-11-07 2016-11-16 ソニー株式会社 半導体装置、半導体装置の製造方法、及びアンテナスイッチモジュール
US8796072B2 (en) 2012-11-15 2014-08-05 Amkor Technology, Inc. Method and system for a semiconductor device package with a die-to-die first bond
US9431369B2 (en) 2012-12-13 2016-08-30 Taiwan Semiconductor Manufacturing Company, Ltd. Antenna apparatus and method
KR102031731B1 (ko) 2012-12-18 2019-10-14 삼성전자주식회사 반도체 패키지 및 이의 제조방법
US8927405B2 (en) 2012-12-18 2015-01-06 International Business Machines Corporation Accurate control of distance between suspended semiconductor nanowires and substrate surface
US8786105B1 (en) 2013-01-11 2014-07-22 Intel Mobile Communications GmbH Semiconductor device with chip having low-k-layers
US9733428B2 (en) 2013-02-04 2017-08-15 American Semiconductor, Inc. Flexible 3-D photonic device
US9812350B2 (en) 2013-03-06 2017-11-07 Qorvo Us, Inc. Method of manufacture for a silicon-on-plastic semiconductor device with interfacial adhesion layer
US9214337B2 (en) 2013-03-06 2015-12-15 Rf Micro Devices, Inc. Patterned silicon-on-plastic (SOP) technology and methods of manufacturing the same
US20140252566A1 (en) 2013-03-06 2014-09-11 Rf Micro Devices, Inc. Silicon-on-dual plastic (sodp) technology and methods of manufacturing the same
US9583414B2 (en) 2013-10-31 2017-02-28 Qorvo Us, Inc. Silicon-on-plastic semiconductor device and method of making the same
US20140306324A1 (en) 2013-03-06 2014-10-16 Rf Micro Devices, Inc. Semiconductor device with a polymer substrate and methods of manufacturing the same
US8941248B2 (en) 2013-03-13 2015-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device package and method
US8987876B2 (en) 2013-03-14 2015-03-24 General Electric Company Power overlay structure and method of making same
US9070660B2 (en) 2013-03-15 2015-06-30 Intel Corporation Polymer thermal interface material having enhanced thermal conductivity
WO2014153513A1 (en) 2013-03-22 2014-09-25 Henkel IP & Holding GmbH Diene/dienophile couples and thermosetting resin compositions having reworkability
US9349700B2 (en) 2013-04-24 2016-05-24 Stats Chippac, Ltd. Semiconductor device and method of forming stress-reduced conductive joint structures
CN105144385B (zh) 2013-04-26 2018-06-29 奥林巴斯株式会社 摄像装置
US9275916B2 (en) * 2013-05-03 2016-03-01 Infineon Technologies Ag Removable indicator structure in electronic chips of a common substrate for process adjustment
EP3000062A4 (en) 2013-05-20 2017-01-11 Synopsys, Inc. Semi-local ballistic mobility model
US9281198B2 (en) 2013-05-23 2016-03-08 GlobalFoundries, Inc. Method of fabricating a semiconductor device including embedded crystalline back-gate bias planes
KR102130700B1 (ko) 2013-05-30 2020-07-07 삼성디스플레이 주식회사 표시장치용 윈도우 및 이를 포함하는 표시 장치
US9059123B2 (en) 2013-07-24 2015-06-16 International Business Machines Corporation Active matrix using hybrid integrated circuit and bipolar transistor
KR101934945B1 (ko) 2013-10-15 2019-01-04 인텔 코포레이션 자기 차폐형 집적 회로 패키지
US9627287B2 (en) 2013-10-18 2017-04-18 Infineon Technologies Ag Thinning in package using separation structure as stop
US9576930B2 (en) 2013-11-08 2017-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Thermally conductive structure for heat dissipation in semiconductor packages
US9352956B2 (en) 2014-01-16 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS devices and methods for forming same
US9653443B2 (en) 2014-02-14 2017-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal performance structure for semiconductor packages and method of forming same
US10056267B2 (en) 2014-02-14 2018-08-21 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate design for semiconductor packages and method of forming same
US9368455B2 (en) 2014-03-28 2016-06-14 Intel Corporation Electromagnetic interference shield for semiconductor chip packages
US20150311132A1 (en) 2014-04-28 2015-10-29 Taiwan Semiconductor Manufacturing Company, Ltd. Scribe line structure and method of forming same
US9165793B1 (en) 2014-05-02 2015-10-20 Invensas Corporation Making electrical components in handle wafers of integrated circuit packages
US10141201B2 (en) 2014-06-13 2018-11-27 Taiwan Semiconductor Manufacturing Company Integrated circuit packages and methods of forming same
KR102245003B1 (ko) 2014-06-27 2021-04-28 삼성전자주식회사 오버행을 극복할 수 있는 반도체 패키지 및 그 제조방법
US9397118B2 (en) 2014-06-30 2016-07-19 International Business Machines Corporation Thin-film ambipolar logic
JP6751385B2 (ja) 2014-07-08 2020-09-02 マサチューセッツ インスティテュート オブ テクノロジー 基板の製造方法
TWI582847B (zh) 2014-09-12 2017-05-11 Ｒｆ微型儀器公司 包含具有聚合物基板之半導體裝置的印刷電路模組及其製造方法
US10085352B2 (en) 2014-10-01 2018-09-25 Qorvo Us, Inc. Method for manufacturing an integrated circuit package
US9530709B2 (en) 2014-11-03 2016-12-27 Qorvo Us, Inc. Methods of manufacturing a printed circuit module having a semiconductor device with a protective layer in place of a low-resistivity handle layer
KR101647559B1 (ko) 2014-11-07 2016-08-10 앰코 테크놀로지 코리아 주식회사 반도체 패키지의 제조 방법 및 반도체 패키지
JP6233285B2 (ja) 2014-11-28 2017-11-22 三菱電機株式会社 半導体モジュール、電力変換装置
DE102014117594A1 (de) * 2014-12-01 2016-06-02 Infineon Technologies Ag Halbleiter-Package und Verfahren zu seiner Herstellung
US9548273B2 (en) * 2014-12-04 2017-01-17 Invensas Corporation Integrated circuit assemblies with rigid layers used for protection against mechanical thinning and for other purposes, and methods of fabricating such assemblies
US9613831B2 (en) 2015-03-25 2017-04-04 Qorvo Us, Inc. Encapsulated dies with enhanced thermal performance
US9960145B2 (en) 2015-03-25 2018-05-01 Qorvo Us, Inc. Flip chip module with enhanced properties
US9875971B2 (en) 2015-03-26 2018-01-23 Globalfoundries Singapore Pte. Ltd. Magnetic shielding of MRAM package
US9653428B1 (en) 2015-04-14 2017-05-16 Amkor Technology, Inc. Semiconductor package and fabricating method thereof
US20160343604A1 (en) 2015-05-22 2016-11-24 Rf Micro Devices, Inc. Substrate structure with embedded layer for post-processing silicon handle elimination
US9969614B2 (en) 2015-05-29 2018-05-15 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS packages and methods of manufacture thereof
US9815685B2 (en) 2015-06-15 2017-11-14 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor sensing structure and manufacturing method thereof
US9461001B1 (en) 2015-07-22 2016-10-04 Advanced Semiconductor Engineering, Inc. Semiconductor device package integrated with coil for wireless charging and electromagnetic interference shielding, and method of manufacturing the same
US9899285B2 (en) 2015-07-30 2018-02-20 Semtech Corporation Semiconductor device and method of forming small Z semiconductor package
WO2017034929A1 (en) 2015-08-21 2017-03-02 Skyworks Solutions, Inc. Non-uniform spacing in transistor stacks
US10276495B2 (en) 2015-09-11 2019-04-30 Qorvo Us, Inc. Backside semiconductor die trimming
US9850126B2 (en) * 2015-12-31 2017-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit package and method of forming same
US10020405B2 (en) 2016-01-19 2018-07-10 Qorvo Us, Inc. Microelectronics package with integrated sensors
US10062583B2 (en) 2016-05-09 2018-08-28 Qorvo Us, Inc. Microelectronics package with inductive element and magnetically enhanced mold compound component
US10773952B2 (en) 2016-05-20 2020-09-15 Qorvo Us, Inc. Wafer-level package with enhanced performance
US10784149B2 (en) 2016-05-20 2020-09-22 Qorvo Us, Inc. Air-cavity module with enhanced device isolation
US10468329B2 (en) 2016-07-18 2019-11-05 Qorvo Us, Inc. Thermally enhanced semiconductor package having field effect transistors with back-gate feature
US10103080B2 (en) 2016-06-10 2018-10-16 Qorvo Us, Inc. Thermally enhanced semiconductor package with thermal additive and process for making the same
US9859254B1 (en) * 2016-06-30 2018-01-02 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and a manufacturing method thereof
CN109844938B (zh) 2016-08-12 2023-07-18 Qorvo美国公司 具有增强性能的晶片级封装
WO2018031994A1 (en) 2016-08-12 2018-02-15 Qorvo Us, Inc. Wafer-level package with enhanced performance
CN109716511A (zh) 2016-08-12 2019-05-03 Qorvo美国公司 具有增强性能的晶片级封装
US9786586B1 (en) 2016-08-21 2017-10-10 Micron Technology, Inc. Semiconductor package and fabrication method thereof
US11069560B2 (en) 2016-11-01 2021-07-20 Shin-Etsu Chemical Co., Ltd. Method of transferring device layer to transfer substrate and highly thermal conductive substrate
US10749518B2 (en) 2016-11-18 2020-08-18 Qorvo Us, Inc. Stacked field-effect transistor switch
US10068831B2 (en) 2016-12-09 2018-09-04 Qorvo Us, Inc. Thermally enhanced semiconductor package and process for making the same
WO2018125242A1 (en) 2016-12-30 2018-07-05 Intel Corporation Microelectronic devices designed with 3d stacked ultra thin package modules for high frequency communications
US10529698B2 (en) 2017-03-15 2020-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor packages and methods of forming same
US10134837B1 (en) 2017-06-30 2018-11-20 Qualcomm Incorporated Porous silicon post processing
US10128199B1 (en) 2017-07-17 2018-11-13 International Business Machines Corporation Interchip backside connection
US10410999B2 (en) 2017-12-19 2019-09-10 Amkor Technology, Inc. Semiconductor device with integrated heat distribution and manufacturing method thereof
US10727212B2 (en) 2018-03-15 2020-07-28 Samsung Electronics Co., Ltd. Semiconductor package
US10497648B2 (en) 2018-04-03 2019-12-03 General Electric Company Embedded electronics package with multi-thickness interconnect structure and method of making same

Similar Documents

Publication Publication Date Title
JP2019525488A5 (enExample)
JP2019525486A5 (enExample)
CN103972159B (zh) 三维封装结构及其形成方法
CN100595897C (zh) 晶圆级封装对象及其形成的方法
CN105502280B (zh) Mems器件的形成方法
TWI505413B (zh) 晶片封裝體及其製造方法
JP2019525487A5 (enExample)
JP2009516929A5 (enExample)
WO2009140798A1 (zh) 电子元件封装体及其制作方法
TWI594369B (zh) 與互補式金屬氧化物半導體相容的晶圓接合層及製程
CN104377138A (zh) 具有背面管芯金属化的模制的半导体封装
CN103390601A (zh) 晶片封装体及其形成方法
TWI543320B (zh) 半導體封裝件及其製法
KR20140059297A (ko) 솔더링 릴리프 방법 및 솔더링 릴리프 방법을 사용하는 반도체 디바이스
JP2013513971A5 (enExample)
TW201232736A (en) Chip package and method for forming the same
JP2011523203A5 (enExample)
TWI503937B (zh) 晶片封裝體及其形成方法
KR20170049695A (ko) 유연한 연결부를 갖는 반도체 장치 및 그 제조방법
JP2010538847A (ja) 複数のチップの製造方法
TW201622124A (zh) 節省空間的可安裝ｐｃｂ的圖像感測器和其製造方法
TWI541946B (zh) 半導體封裝件及其製法
KR20200015805A (ko) 웨이퍼 수준 패키징을 위한 방법 및 장치
CN105575827A (zh) 用于把半导体管芯附接到载体的方法
TWI473228B (zh) 半導體封裝件之製法