JP2009516929A5 - - Google Patents

Download PDF

Info

Publication number
JP2009516929A5
JP2009516929A5 JP2008542321A JP2008542321A JP2009516929A5 JP 2009516929 A5 JP2009516929 A5 JP 2009516929A5 JP 2008542321 A JP2008542321 A JP 2008542321A JP 2008542321 A JP2008542321 A JP 2008542321A JP 2009516929 A5 JP2009516929 A5 JP 2009516929A5
Authority
JP
Japan
Prior art keywords
semiconductor
glass
layer
glass ceramic
ceramic substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2008542321A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009516929A (ja
Filing date
Publication date
Priority claimed from US11/517,908 external-priority patent/US7691730B2/en
Application filed filed Critical
Publication of JP2009516929A publication Critical patent/JP2009516929A/ja
Publication of JP2009516929A5 publication Critical patent/JP2009516929A5/ja
Abandoned legal-status Critical Current

Links

JP2008542321A 2005-11-22 2006-10-26 ガラス絶縁体上の大面積半導体 Abandoned JP2009516929A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US73963105P 2005-11-22 2005-11-22
US11/517,908 US7691730B2 (en) 2005-11-22 2006-09-08 Large area semiconductor on glass insulator
PCT/US2006/041660 WO2007061563A1 (en) 2005-11-22 2006-10-26 Large area semiconductor on glass insulator

Publications (2)

Publication Number Publication Date
JP2009516929A JP2009516929A (ja) 2009-04-23
JP2009516929A5 true JP2009516929A5 (enExample) 2009-12-17

Family

ID=37636113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008542321A Abandoned JP2009516929A (ja) 2005-11-22 2006-10-26 ガラス絶縁体上の大面積半導体

Country Status (5)

Country Link
US (2) US7691730B2 (enExample)
EP (1) EP1955371A1 (enExample)
JP (1) JP2009516929A (enExample)
KR (1) KR20080080571A (enExample)
WO (1) WO2007061563A1 (enExample)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8728937B2 (en) * 2004-07-30 2014-05-20 Osram Opto Semiconductors Gmbh Method for producing semiconductor chips using thin film technology
US7691730B2 (en) * 2005-11-22 2010-04-06 Corning Incorporated Large area semiconductor on glass insulator
US7456057B2 (en) 2005-12-31 2008-11-25 Corning Incorporated Germanium on glass and glass-ceramic structures
KR20080092403A (ko) * 2006-01-03 2008-10-15 코닝 인코포레이티드 게르마늄 온 유리 및 유리-세라믹 구조체
US20080157090A1 (en) * 2006-12-28 2008-07-03 Darren Brent Thomson Transplanted epitaxial regrowth for fabricating large area substrates for electronic devices
US7825007B2 (en) * 2007-05-11 2010-11-02 Semiconductor Energy Laboratory Co., Ltd. Method of joining a plurality of SOI substrates on a glass substrate by a heat treatment
US9434642B2 (en) 2007-05-21 2016-09-06 Corning Incorporated Mechanically flexible and durable substrates
KR101495153B1 (ko) * 2007-06-01 2015-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기판의 제작 방법 및 반도체장치
US7776718B2 (en) * 2007-06-25 2010-08-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor substrate with reduced gap size between single-crystalline layers
CN101743616B (zh) * 2007-06-28 2012-02-22 株式会社半导体能源研究所 半导体装置的制造方法
US7807520B2 (en) * 2007-06-29 2010-10-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8431451B2 (en) 2007-06-29 2013-04-30 Semicondutor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US7795114B2 (en) * 2007-08-10 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of SOI substrate and semiconductor device
JP5460984B2 (ja) * 2007-08-17 2014-04-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2009076729A (ja) * 2007-09-21 2009-04-09 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP5250228B2 (ja) * 2007-09-21 2013-07-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2009094488A (ja) * 2007-09-21 2009-04-30 Semiconductor Energy Lab Co Ltd 半導体膜付き基板の作製方法
JP5452900B2 (ja) * 2007-09-21 2014-03-26 株式会社半導体エネルギー研究所 半導体膜付き基板の作製方法
US8217498B2 (en) * 2007-10-18 2012-07-10 Corning Incorporated Gallium nitride semiconductor device on SOI and process for making same
US7977206B2 (en) * 2008-01-16 2011-07-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate using the heat treatment apparatus
JP2010087345A (ja) * 2008-10-01 2010-04-15 Semiconductor Energy Lab Co Ltd 半導体基板の作製方法
US8443863B2 (en) * 2008-10-23 2013-05-21 Corning Incorporated High temperature sheet handling system and methods
US7816225B2 (en) * 2008-10-30 2010-10-19 Corning Incorporated Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation
TWI430338B (zh) 2008-10-30 2014-03-11 Corning Inc 使用定向剝離作用製造絕緣體上半導體結構之方法及裝置
US8003491B2 (en) * 2008-10-30 2011-08-23 Corning Incorporated Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation
JP5562696B2 (ja) * 2009-03-27 2014-07-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101058105B1 (ko) * 2009-04-06 2011-08-24 삼성모바일디스플레이주식회사 액티브 매트릭스 기판의 제조방법 및 유기 발광 표시장치의 제조방법
KR101127574B1 (ko) 2009-04-06 2012-03-23 삼성모바일디스플레이주식회사 액티브 매트릭스 기판의 제조방법 및 유기 발광 표시장치의 제조방법
EP2364957A1 (en) * 2010-02-26 2011-09-14 Corning Incorporated Glass ceramics with bulk scattering properties and methods of making them
WO2012060430A1 (ja) 2010-11-05 2012-05-10 シャープ株式会社 半導体基板、半導体基板の製造方法、薄膜トランジスタ、半導体回路、液晶表示装置、エレクトロルミネセンス装置、無線通信装置、及び発光装置
WO2013002227A1 (ja) 2011-06-30 2013-01-03 シャープ株式会社 半導体基板の製造方法、半導体基板作成用基板、積層基板、半導体基板、及び電子デバイス
JP5725430B2 (ja) * 2011-10-18 2015-05-27 富士電機株式会社 固相接合ウエハの支持基板の剥離方法および半導体装置の製造方法
US9041147B2 (en) 2012-01-10 2015-05-26 Sharp Kabushiki Kaisha Semiconductor substrate, thin film transistor, semiconductor circuit, liquid crystal display apparatus, electroluminescent apparatus, semiconductor substrate manufacturing method, and semiconductor substrate manufacturing apparatus
SG11201404765QA (en) 2012-02-22 2014-10-30 Grace W R & Co Functionalized polyamines for clay mitigation
US8587025B1 (en) * 2012-07-03 2013-11-19 Infineon Technologies Ag Method for forming laterally varying doping concentrations and a semiconductor device
TWI771375B (zh) 2017-02-24 2022-07-21 美商康寧公司 高寬高比玻璃晶圓
WO2019156695A1 (en) 2018-02-09 2019-08-15 Didrew Technology (Bvi) Limited Method of manufacturing fan out package with carrier-less molded cavity
CN112005338B (zh) 2018-02-15 2024-07-16 成都奕成集成电路有限公司 在具有翘曲控制增强件的大载体上同时制造多晶圆的方法
CN112005369B (zh) 2018-02-15 2024-05-28 成都奕成集成电路有限公司 制造半导体器件的方法及半导体器件
CN111989771A (zh) * 2018-02-19 2020-11-24 迪德鲁科技(Bvi)有限公司 制造玻璃框架扇出型封装的系统和方法

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9020908D0 (en) 1990-09-26 1990-11-07 Nat Res Dev Field-assisted bonding
US5206749A (en) * 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
US5376561A (en) * 1990-12-31 1994-12-27 Kopin Corporation High density electronic circuit modules
US6593978B2 (en) * 1990-12-31 2003-07-15 Kopin Corporation Method for manufacturing active matrix liquid crystal displays
US5256562A (en) * 1990-12-31 1993-10-26 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US5300788A (en) * 1991-01-18 1994-04-05 Kopin Corporation Light emitting diode bars and arrays and method of making same
US5499124A (en) * 1990-12-31 1996-03-12 Vu; Duy-Phach Polysilicon transistors formed on an insulation layer which is adjacent to a liquid crystal material
US5258325A (en) * 1990-12-31 1993-11-02 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
FR2715501B1 (fr) * 1994-01-26 1996-04-05 Commissariat Energie Atomique Procédé de dépôt de lames semiconductrices sur un support.
US5656844A (en) * 1995-07-27 1997-08-12 Motorola, Inc. Semiconductor-on-insulator transistor having a doping profile for fully-depleted operation
CA2232796C (en) * 1997-03-26 2002-01-22 Canon Kabushiki Kaisha Thin film forming process
US6048411A (en) * 1997-05-12 2000-04-11 Silicon Genesis Corporation Silicon-on-silicon hybrid wafer assembly
US6376337B1 (en) * 1997-11-10 2002-04-23 Nanodynamics, Inc. Epitaxial SiOx barrier/insulation layer
JPH11307747A (ja) * 1998-04-17 1999-11-05 Nec Corp Ｓｏｉ基板およびその製造方法
US6093623A (en) * 1998-08-04 2000-07-25 Micron Technology, Inc. Methods for making silicon-on-insulator structures
JP4476390B2 (ja) * 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3911901B2 (ja) * 1999-04-09 2007-05-09 信越半導体株式会社 Ｓｏｉウエーハおよびｓｏｉウエーハの製造方法
US6323108B1 (en) * 1999-07-27 2001-11-27 The United States Of America As Represented By The Secretary Of The Navy Fabrication ultra-thin bonded semiconductor layers
EP1482549B1 (en) * 2003-05-27 2011-03-30 S.O.I. Tec Silicon on Insulator Technologies S.A. Method of fabrication of a heteroepitaxial microstructure
JP4304879B2 (ja) * 2001-04-06 2009-07-29 信越半導体株式会社 水素イオンまたは希ガスイオンの注入量の決定方法
US7018910B2 (en) * 2002-07-09 2006-03-28 S.O.I.Tec Silicon On Insulator Technologies S.A. Transfer of a thin layer from a wafer comprising a buffer layer
JP2004103946A (ja) 2002-09-11 2004-04-02 Canon Inc 基板及びその製造方法
US6818529B2 (en) * 2002-09-12 2004-11-16 Applied Materials, Inc. Apparatus and method for forming a silicon film across the surface of a glass substrate
US6995427B2 (en) * 2003-01-29 2006-02-07 S.O.I.Tec Silicon On Insulator Technologies S.A. Semiconductor structure for providing strained crystalline layer on insulator and method for fabricating same
US6812504B2 (en) * 2003-02-10 2004-11-02 Micron Technology, Inc. TFT-based random access memory cells comprising thyristors
US7176528B2 (en) * 2003-02-18 2007-02-13 Corning Incorporated Glass-based SOI structures
KR100426073B1 (ko) 2003-09-24 2004-04-06 전병준 프로브 카드의 탐침 구조
ATE405947T1 (de) * 2003-09-26 2008-09-15 Soitec Silicon On Insulator Verfahren zur herstellung vonn substraten für epitakitisches wachstum
US7435665B2 (en) * 2004-10-06 2008-10-14 Okmetic Oyj CVD doped structures
US7410883B2 (en) 2005-04-13 2008-08-12 Corning Incorporated Glass-based semiconductor on insulator structures and methods of making same
US7691730B2 (en) * 2005-11-22 2010-04-06 Corning Incorporated Large area semiconductor on glass insulator

Similar Documents

Publication Publication Date Title
JP2009516929A5 (enExample)
JP3439968B2 (ja) お互いに接触している１つの構造体を構成する少なくとも２つの構成材料をイオン注入により分離するためのプロセス
CN103811419B (zh) 半导体片芯单颗化方法和装置
JP2019525488A5 (enExample)
US8754505B2 (en) Method of producing a heterostructure with local adaptation of the thermal expansion coefficient
JP2009516863A (ja) 複数の薄膜部品を含むスクリーン形の可撓性電子デバイスを製造する方法
JPS61112345A (ja) 半導体装置の製造方法
JP2010141287A (ja) 薄膜素子の製造方法
WO2019114072A1 (zh) 柔性显示面板的制作方法
CN101882624A (zh) 在绝缘衬底上形成有高Ge应变层的结构及形成方法
CN103268056A (zh) 柔性掩膜板及其制备方法
TWI417164B (zh) 靜電夾盤及其製造方法
JP6723236B2 (ja) バイアボトムアップ電解メッキ方法
WO2020258644A1 (zh) 一种microled芯片的转移方法
TW201908124A (zh) 高熱傳導性之元件基板及其製造方法
TW201123318A (en) Method for making a chip package
JP2009117688A5 (enExample)
JPH0312775B2 (enExample)
CN103000491A (zh) 可挠性显示设备的制造方法
CN100543962C (zh) 将电路转移到接地层的方法
KR101840718B1 (ko) 이중층 전이를 위한 기계적 분리 방법
JP2009095962A (ja) 薄膜半導体装置の製造方法
JP2019527937A (ja) ドナー基板から圧電層を剥離するための電界の使用
JPH01133341A (ja) 半導体基板の製造方法及び半導体装置の製造方法
CN102265380A (zh) 半导体装置及其制造方法