GB9020908D0 - Field-assisted bonding - Google Patents
Field-assisted bondingInfo
- Publication number
- GB9020908D0 GB9020908D0 GB909020908A GB9020908A GB9020908D0 GB 9020908 D0 GB9020908 D0 GB 9020908D0 GB 909020908 A GB909020908 A GB 909020908A GB 9020908 A GB9020908 A GB 9020908A GB 9020908 D0 GB9020908 D0 GB 9020908D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- field
- assisted bonding
- assisted
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB909020908A GB9020908D0 (en) | 1990-09-26 | 1990-09-26 | Field-assisted bonding |
JP3517404A JPH06504877A (en) | 1990-09-26 | 1991-09-26 | Electric field-assisted adhesion |
PCT/GB1991/001659 WO1992005575A1 (en) | 1990-09-26 | 1991-09-26 | Field-assisted bonding |
EP91917115A EP0551323A1 (en) | 1990-09-26 | 1991-09-26 | Field-assisted bonding |
GB9306356A GB2264003A (en) | 1990-09-26 | 1993-03-26 | Field-assisted bonding |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB909020908A GB9020908D0 (en) | 1990-09-26 | 1990-09-26 | Field-assisted bonding |
Publications (1)
Publication Number | Publication Date |
---|---|
GB9020908D0 true GB9020908D0 (en) | 1990-11-07 |
Family
ID=10682759
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB909020908A Pending GB9020908D0 (en) | 1990-09-26 | 1990-09-26 | Field-assisted bonding |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0551323A1 (en) |
JP (1) | JPH06504877A (en) |
GB (1) | GB9020908D0 (en) |
WO (1) | WO1992005575A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0539741B1 (en) * | 1991-09-30 | 2003-01-15 | Canon Kabushiki Kaisha | Anodic bonding process with light irradiation |
FR2715502B1 (en) * | 1994-01-26 | 1996-04-05 | Commissariat Energie Atomique | Structure having cavities and method for producing such a structure. |
US7176528B2 (en) * | 2003-02-18 | 2007-02-13 | Corning Incorporated | Glass-based SOI structures |
US7691730B2 (en) * | 2005-11-22 | 2010-04-06 | Corning Incorporated | Large area semiconductor on glass insulator |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4285714A (en) * | 1978-12-07 | 1981-08-25 | Spire Corporation | Electrostatic bonding using externally applied pressure |
-
1990
- 1990-09-26 GB GB909020908A patent/GB9020908D0/en active Pending
-
1991
- 1991-09-26 WO PCT/GB1991/001659 patent/WO1992005575A1/en not_active Application Discontinuation
- 1991-09-26 EP EP91917115A patent/EP0551323A1/en not_active Withdrawn
- 1991-09-26 JP JP3517404A patent/JPH06504877A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
WO1992005575A1 (en) | 1992-04-02 |
EP0551323A1 (en) | 1993-07-21 |
JPH06504877A (en) | 1994-06-02 |
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