JP2011066400A5 - - Google Patents

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Publication number
JP2011066400A5
JP2011066400A5 JP2010182024A JP2010182024A JP2011066400A5 JP 2011066400 A5 JP2011066400 A5 JP 2011066400A5 JP 2010182024 A JP2010182024 A JP 2010182024A JP 2010182024 A JP2010182024 A JP 2010182024A JP 2011066400 A5 JP2011066400 A5 JP 2011066400A5
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JP
Japan
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semiconductor layer
layer
single crystal
photoelectric conversion
crystal semiconductor
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JP2010182024A
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English (en)
Japanese (ja)
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JP5564358B2 (ja
JP2011066400A (ja
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Publication of JP2011066400A5 publication Critical patent/JP2011066400A5/ja
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JP2010182024A 2009-08-18 2010-08-17 光電変換装置及びその作製方法 Expired - Fee Related JP5564358B2 (ja)

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JP2010182024A JP5564358B2 (ja) 2009-08-18 2010-08-17 光電変換装置及びその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009189068 2009-08-18
JP2009189068 2009-08-18
JP2010182024A JP5564358B2 (ja) 2009-08-18 2010-08-17 光電変換装置及びその作製方法

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JP2011066400A JP2011066400A (ja) 2011-03-31
JP2011066400A5 true JP2011066400A5 (enExample) 2013-09-12
JP5564358B2 JP5564358B2 (ja) 2014-07-30

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JP2010182024A Expired - Fee Related JP5564358B2 (ja) 2009-08-18 2010-08-17 光電変換装置及びその作製方法

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US (1) US20110041910A1 (enExample)
JP (1) JP5564358B2 (enExample)

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JP5917082B2 (ja) 2011-10-20 2016-05-11 株式会社半導体エネルギー研究所 光電変換装置の作製方法
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JP2015133339A (ja) * 2012-04-25 2015-07-23 パナソニック株式会社 光電変換装置
JP6115806B2 (ja) * 2012-11-29 2017-04-19 パナソニックＩｐマネジメント株式会社 光起電力装置
JP6125042B2 (ja) * 2013-12-04 2017-05-10 三菱電機株式会社 太陽電池セルの製造方法
CN104966789A (zh) * 2015-06-30 2015-10-07 深圳市华星光电技术有限公司 一种电荷连接层及其制造方法、叠层oled器件
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CN208691627U (zh) * 2018-08-03 2019-04-02 奥特斯科技(重庆)有限公司 具有嵌入腔中的部件且前侧上具有双介电层的部件承载件
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US11367803B2 (en) 2020-04-01 2022-06-21 Taiwan Semiconductor Manufacturing Company Ltd. Light detecting device, optical device and method of manufacturing the same
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US11443940B2 (en) * 2020-06-24 2022-09-13 Canon Kabushiki Kaisha Apparatus for uniform light intensity and methods of using the same

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