WO2014011260A3 - High efficiency solar cell structures and manufacturing methods - Google Patents

High efficiency solar cell structures and manufacturing methods Download PDF

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Publication number
WO2014011260A3
WO2014011260A3 PCT/US2013/035029 US2013035029W WO2014011260A3 WO 2014011260 A3 WO2014011260 A3 WO 2014011260A3 US 2013035029 W US2013035029 W US 2013035029W WO 2014011260 A3 WO2014011260 A3 WO 2014011260A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrically conductive
metallization layer
solar cell
conductive metallization
high efficiency
Prior art date
Application number
PCT/US2013/035029
Other languages
French (fr)
Other versions
WO2014011260A2 (en
Inventor
Karl-Josef Kramer
Mehrdad M. Moslehi
Pawan Kapur
Virendra V. Rana
David Dutton
Sean M. Seutter
Anthony Calcaterra
Jay Ashjaee
Takao Yonehara
Original Assignee
Solexel, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solexel, Inc. filed Critical Solexel, Inc.
Priority to JP2015504686A priority Critical patent/JP2015516145A/en
Priority to AU2013289151A priority patent/AU2013289151A1/en
Publication of WO2014011260A2 publication Critical patent/WO2014011260A2/en
Publication of WO2014011260A3 publication Critical patent/WO2014011260A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Sustainable Energy (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

According to one aspect of the disclosed subject matter, fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a light receiving front side surface and a backside surface for forming patterned emitter and base regions. A first electrically conductive metallization layer is patterned on the backside base and emitter regions. An electrically insulating layer is formed on the first electrically conductive metallization layer and a second electrically conductive metallization layer is formed on the electrically insulating layer. The second electrically conductive metallization layer is connected to the first electrically conductive metallization layer through conductive via plugs formed in the electrically insulating layer.
PCT/US2013/035029 2012-04-02 2013-04-02 High efficiency solar cell structures and manufacturing methods WO2014011260A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015504686A JP2015516145A (en) 2012-04-02 2013-04-02 High efficiency solar cell structure and manufacturing method thereof
AU2013289151A AU2013289151A1 (en) 2012-04-02 2013-04-02 High efficiency solar cell structures and manufacturing methods

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261619300P 2012-04-02 2012-04-02
US61/619,300 2012-04-02

Publications (2)

Publication Number Publication Date
WO2014011260A2 WO2014011260A2 (en) 2014-01-16
WO2014011260A3 true WO2014011260A3 (en) 2014-04-10

Family

ID=49916638

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2013/035029 WO2014011260A2 (en) 2012-04-02 2013-04-02 High efficiency solar cell structures and manufacturing methods

Country Status (3)

Country Link
JP (1) JP2015516145A (en)
AU (1) AU2013289151A1 (en)
WO (1) WO2014011260A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10164131B2 (en) * 2014-12-19 2018-12-25 Sunpower Corporation Multi-layer sputtered metal seed for solar cell conductive contact
FR3050870B1 (en) * 2016-04-28 2018-05-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives METHOD FOR PRODUCING AN ELECTROMAGNETIC RADIATION DETECTION DEVICE COMPRISING A LAYER OF GETTER MATERIAL
CN112466967B (en) * 2020-11-23 2023-08-22 浙江晶科能源有限公司 Selective emitter solar cell and preparation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090114276A1 (en) * 2007-06-18 2009-05-07 Wei Shan Methods and apparatuses for improving power extraction from solar cells
WO2009149850A2 (en) * 2008-06-12 2009-12-17 Bayer Materialscience Ag Light, rigid, self-supporting solar module and method for the production thereof
US20100112782A1 (en) * 2007-04-17 2010-05-06 Imec Method for reducing the thickness of substrates
WO2011090169A1 (en) * 2010-01-22 2011-07-28 シャープ株式会社 Back contact solar cell, wiring sheet, solar cell having wiring sheet, solar cell module and production method for solar cell having wiring sheet
US20120055543A1 (en) * 2010-09-03 2012-03-08 Solopower, Inc. Back contact diffusion barrier layers for group ibiiiavia photovoltaic cells

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6313396B1 (en) * 2000-05-22 2001-11-06 The Boeing Company Lightweight solar module and method of fabrication
JP2005317779A (en) * 2004-04-28 2005-11-10 Toyota Motor Corp Photoelectric converting element
JP2008052767A (en) * 2006-08-22 2008-03-06 Sony Corp Recording device and recording method, and program
JP5252472B2 (en) * 2007-09-28 2013-07-31 シャープ株式会社 Solar cell, method for manufacturing solar cell, method for manufacturing solar cell module, and solar cell module
EP2404317A4 (en) * 2009-03-06 2014-06-11 Solexel Inc Method for releasing a thin-film substrate
JP2011054831A (en) * 2009-09-03 2011-03-17 Sharp Corp Back contact type solar cell, solar cell string, and solar cell module
WO2011150397A2 (en) * 2010-05-27 2011-12-01 Solexel, Inc. Laser processing for high-efficiency thin crystalline silicon solar cell fabrication
KR101289789B1 (en) * 2010-08-13 2013-07-26 솔렉셀, 인크. Apparatus and method for repeatedly fabricating thin film semiconductor substrates using a template
US20120073650A1 (en) * 2010-09-24 2012-03-29 David Smith Method of fabricating an emitter region of a solar cell

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100112782A1 (en) * 2007-04-17 2010-05-06 Imec Method for reducing the thickness of substrates
US20090114276A1 (en) * 2007-06-18 2009-05-07 Wei Shan Methods and apparatuses for improving power extraction from solar cells
WO2009149850A2 (en) * 2008-06-12 2009-12-17 Bayer Materialscience Ag Light, rigid, self-supporting solar module and method for the production thereof
WO2011090169A1 (en) * 2010-01-22 2011-07-28 シャープ株式会社 Back contact solar cell, wiring sheet, solar cell having wiring sheet, solar cell module and production method for solar cell having wiring sheet
US20120055543A1 (en) * 2010-09-03 2012-03-08 Solopower, Inc. Back contact diffusion barrier layers for group ibiiiavia photovoltaic cells

Also Published As

Publication number Publication date
JP2015516145A (en) 2015-06-08
AU2013289151A1 (en) 2014-11-13
WO2014011260A2 (en) 2014-01-16

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