MY184055A - Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells - Google Patents

Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells

Info

Publication number
MY184055A
MY184055A MYPI2014703566A MYPI2014703566A MY184055A MY 184055 A MY184055 A MY 184055A MY PI2014703566 A MYPI2014703566 A MY PI2014703566A MY PI2014703566 A MYPI2014703566 A MY PI2014703566A MY 184055 A MY184055 A MY 184055A
Authority
MY
Malaysia
Prior art keywords
base regions
emitter
contiguous
metallization
patterned
Prior art date
Application number
MYPI2014703566A
Inventor
Anand Deshpande
Pawan Kapur
Virendra V Rana
Mehrdad M Moslehi
Sean M Seutter
Heather Deshazer
Swaroop Kommera
Pranav Anbalagan
Benjamine E Rattle
Solene Coutant
Original Assignee
Solexel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solexel Inc filed Critical Solexel Inc
Publication of MY184055A publication Critical patent/MY184055A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

Fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a substrate having a light receiving frontside surface and a backside surface for forming patterned emitter and non-nested base regions. Interdigitated doped emitter and base regions are formed on a backside surface of a crystalline semiconductor substrate. A patterned electrically insulating layer stack comprising a combination of at least a doped layer and an undoped capping layer is formed on the patterned doped emitter and base regions. A contact metallization pattern is formed comprising emitter metallization electrodes contacting the emitter regions and non-nested base metallization electrodes contacting the base regions wherein the non-nested base metallization electrodes are allowed to go beyond the base regions to overlap at least a portion of said patterned insulator without causing electrical shunts in the solar cell.
MYPI2014703566A 2012-05-29 2013-05-29 Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells MY184055A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201261652833P 2012-05-29 2012-05-29
US201361816830P 2013-04-29 2013-04-29
US201361827252P 2013-05-24 2013-05-24
PCT/US2013/043193 WO2013181298A1 (en) 2012-05-29 2013-05-29 Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells

Publications (1)

Publication Number Publication Date
MY184055A true MY184055A (en) 2021-03-17

Family

ID=49673880

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2014703566A MY184055A (en) 2012-05-29 2013-05-29 Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells

Country Status (7)

Country Link
EP (1) EP2856512A4 (en)
JP (1) JP2015528196A (en)
KR (1) KR101528447B1 (en)
CN (1) CN104737302A (en)
AU (2) AU2013267481A1 (en)
MY (1) MY184055A (en)
WO (1) WO2013181298A1 (en)

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CN105322032A (en) * 2014-07-30 2016-02-10 英稳达科技股份有限公司 Solar battery
WO2017008120A1 (en) * 2015-07-14 2017-01-19 Newsouth Innovations Pty Limited A method for forming a contacting structure to a back contact solar cell
KR102600379B1 (en) * 2015-12-21 2023-11-10 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 Solar cell and method for fabricating therefor
JP7100364B2 (en) 2017-02-20 2022-07-13 株式会社フジキン Fluid controller anomaly detector, anomaly detection system, anomaly detection method, and fluid controller
WO2019017281A1 (en) * 2017-07-18 2019-01-24 シャープ株式会社 Photoelectric conversion device
EP3624204B1 (en) * 2018-09-13 2023-04-26 IMEC vzw Selective deposition for interdigitated patterns in solar cells

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US6337283B1 (en) * 1999-12-30 2002-01-08 Sunpower Corporation Method of fabricating a silicon solar cell
JP2005310830A (en) * 2004-04-16 2005-11-04 Sharp Corp Solar cell and manufacturing method thereof
DE102004050269A1 (en) * 2004-10-14 2006-04-20 Institut Für Solarenergieforschung Gmbh Process for the contact separation of electrically conductive layers on back-contacted solar cells and solar cell
US9508886B2 (en) * 2007-10-06 2016-11-29 Solexel, Inc. Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam
WO2008080160A1 (en) * 2006-12-22 2008-07-03 Advent Solar, Inc. Interconnect technologies for back contact solar cells and modules
JP2010521824A (en) * 2007-03-16 2010-06-24 ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド Solar cell
DE102007059486A1 (en) * 2007-12-11 2009-06-18 Institut Für Solarenergieforschung Gmbh Rear contact solar cell with elongated, interleaved emitter and base regions at the back and manufacturing method thereof
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US20090301559A1 (en) * 2008-05-13 2009-12-10 Georgia Tech Research Corporation Solar cell having a high quality rear surface spin-on dielectric layer
US8207444B2 (en) * 2008-07-01 2012-06-26 Sunpower Corporation Front contact solar cell with formed electrically conducting layers on the front side and backside
EP2324509A2 (en) * 2008-08-27 2011-05-25 Applied Materials, Inc. Back contact solar cells using printed dielectric barrier
DE102009003467A1 (en) * 2009-02-11 2010-08-19 Q-Cells Se Rear-contacted solar cell
AU2010229103A1 (en) * 2009-03-26 2011-11-03 Bp Corporation North America Inc. Apparatus and method for solar cells with laser fired contacts in thermally diffused doped regions
KR101153377B1 (en) * 2009-08-24 2012-06-07 주식회사 효성 Back junction solar cell having improved rear structure and method for manufacturing therof
JP2011061020A (en) * 2009-09-10 2011-03-24 Sharp Corp Back contact solar cell element, and method of manufacturing the same
US20130233378A1 (en) * 2009-12-09 2013-09-12 Solexel, Inc. High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using semiconductor wafers
EP2395554A3 (en) * 2010-06-14 2015-03-11 Imec Fabrication method for interdigitated back contact photovoltaic cells
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Also Published As

Publication number Publication date
JP2015528196A (en) 2015-09-24
EP2856512A4 (en) 2015-12-16
AU2016200610B2 (en) 2017-12-07
EP2856512A1 (en) 2015-04-08
CN104737302A (en) 2015-06-24
AU2016200610A1 (en) 2016-02-25
KR20150028782A (en) 2015-03-16
WO2013181298A1 (en) 2013-12-05
KR101528447B1 (en) 2015-06-11
AU2013267481A1 (en) 2015-01-22

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