JP2009200267A5 - - Google Patents

Download PDF

Info

Publication number
JP2009200267A5
JP2009200267A5 JP2008040715A JP2008040715A JP2009200267A5 JP 2009200267 A5 JP2009200267 A5 JP 2009200267A5 JP 2008040715 A JP2008040715 A JP 2008040715A JP 2008040715 A JP2008040715 A JP 2008040715A JP 2009200267 A5 JP2009200267 A5 JP 2009200267A5
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
semiconductor
solar cell
electrode layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008040715A
Other languages
Japanese (ja)
Other versions
JP2009200267A (en
JP5230222B2 (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2008040715A priority Critical patent/JP5230222B2/en
Priority claimed from JP2008040715A external-priority patent/JP5230222B2/en
Publication of JP2009200267A publication Critical patent/JP2009200267A/en
Publication of JP2009200267A5 publication Critical patent/JP2009200267A5/ja
Application granted granted Critical
Publication of JP5230222B2 publication Critical patent/JP5230222B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Claims (9)

受光面と前記受光面の反対側に設けられる裏面とを有する半導体基板と、前記裏面上において所定の方向に沿って交互に配設された一導電型の第1半導体層及び他導電型の第2半導体層とを有する裏面接合型の太陽電池であって、
前記第1半導体層上に設けられた第1電極層と前記第2半導体層上に設けられた第2電極層とを備え、
前記第1電極層と前記第2電極層とは、前記第1半導体層及び第2半導体層と前記第1電極層及び第2電極層との間に配された絶縁層上で電気的に分離されている、太陽電池。
A semiconductor substrate having a light-receiving surface and a back surface provided on the opposite side of the light-receiving surface; a first- conductivity-type first semiconductor layer and a second- conductivity-type first substrate disposed alternately along a predetermined direction on the back surface; A back junction solar cell having two semiconductor layers,
A first electrode layer provided on the first semiconductor layer and a second electrode layer provided on the second semiconductor layer;
The first electrode layer and the second electrode layer are electrically separated on an insulating layer disposed between the first semiconductor layer and the second semiconductor layer and the first electrode layer and the second electrode layer. It is, the solar cell.
前記第1電極層と前記第2電極層とは、前記絶縁層上に設けられた分離溝によって互いに電気的に分離されている、請求項1記載の太陽電池。 The solar cell according to claim 1 , wherein the first electrode layer and the second electrode layer are electrically separated from each other by a separation groove provided on the insulating layer . 前記第1半導体層はpn接合形成用の半導体層であり、The first semiconductor layer is a semiconductor layer for forming a pn junction,
前記第2半導体層はBSF構造形成用の半導体層であり、The second semiconductor layer is a semiconductor layer for forming a BSF structure,
前記分離溝は、前記第1半導体層上の前記絶縁層上に設けられている、請求項2記載の太陽電池。The solar cell according to claim 2, wherein the separation groove is provided on the insulating layer on the first semiconductor layer.
前記第1半導体層と前記半導体基板との間の接触幅は、前記第2半導体層と前記半導体基板との間の接触幅より大きい、請求項1乃至3のいずれかに記載の太陽電池。4. The solar cell according to claim 1, wherein a contact width between the first semiconductor layer and the semiconductor substrate is larger than a contact width between the second semiconductor layer and the semiconductor substrate. 前記第1電極層の幅は前記第1半導体層と前記半導体基板との接触幅より小さく、A width of the first electrode layer is smaller than a contact width between the first semiconductor layer and the semiconductor substrate;
前記第2電極層の幅は前記第2半導体層と前記半導体基板との接触幅より大きい、請求項1乃至4のいずれかに記載の太陽電池。5. The solar cell according to claim 1, wherein a width of the second electrode layer is larger than a contact width between the second semiconductor layer and the semiconductor substrate.
前記絶縁層は、前記第1半導体層上から前記第2半導体層上に跨って形成されている、請求項1乃至5のいずれかに記載の太陽電池。The solar cell according to claim 1, wherein the insulating layer is formed so as to straddle from the first semiconductor layer to the second semiconductor layer. 前記第1半導体層と前記第1電極層との間、及び前記第2半導体層と前記第2電極層との間に夫々配された透明電極層を有する、請求項1乃至6のいずれかに記載の太陽電池。7. The device according to claim 1, further comprising: a transparent electrode layer disposed between the first semiconductor layer and the first electrode layer and between the second semiconductor layer and the second electrode layer. The solar cell described. 前記半導体基板は単結晶シリコンからなり、前記第1半導体層及び第2半導体層は非晶質シリコンからなる、請求項1乃至7のいずれかに記載の太陽電池。The solar cell according to claim 1, wherein the semiconductor substrate is made of single crystal silicon, and the first semiconductor layer and the second semiconductor layer are made of amorphous silicon. 前記半導体基板と前記第1半導体層との間、及び前記半導体基板と前記第2半導体層との間に夫々介挿されたi型非晶質シリコン層を備える、請求項8記載の太陽電池。The solar cell according to claim 8, further comprising an i-type amorphous silicon layer interposed between the semiconductor substrate and the first semiconductor layer and between the semiconductor substrate and the second semiconductor layer.
JP2008040715A 2008-02-21 2008-02-21 Solar cell Active JP5230222B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008040715A JP5230222B2 (en) 2008-02-21 2008-02-21 Solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008040715A JP5230222B2 (en) 2008-02-21 2008-02-21 Solar cell

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2010220823A Division JP5174114B2 (en) 2010-09-30 2010-09-30 Solar cell
JP2010267061A Division JP5094949B2 (en) 2010-11-30 2010-11-30 Solar cell

Publications (3)

Publication Number Publication Date
JP2009200267A JP2009200267A (en) 2009-09-03
JP2009200267A5 true JP2009200267A5 (en) 2010-12-02
JP5230222B2 JP5230222B2 (en) 2013-07-10

Family

ID=41143452

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008040715A Active JP5230222B2 (en) 2008-02-21 2008-02-21 Solar cell

Country Status (1)

Country Link
JP (1) JP5230222B2 (en)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2541617B1 (en) 2010-02-26 2017-03-22 Panasonic Intellectual Property Management Co., Ltd. Solar cell and method for manufacturing solar cell
JP5485062B2 (en) 2010-07-30 2014-05-07 三洋電機株式会社 Solar cell manufacturing method and solar cell
JP5927549B2 (en) * 2010-08-24 2016-06-01 パナソニックIpマネジメント株式会社 Solar cell and manufacturing method thereof
WO2012026358A1 (en) * 2010-08-24 2012-03-01 三洋電機株式会社 Solar cell and method for manufacturing same
WO2012132854A1 (en) 2011-03-25 2012-10-04 三洋電機株式会社 Photoelectric conversion device and method for producing same
JP5891382B2 (en) 2011-03-25 2016-03-23 パナソニックIpマネジメント株式会社 Method for manufacturing photoelectric conversion element
WO2012132064A1 (en) * 2011-03-25 2012-10-04 三洋電機株式会社 Photovoltaic element
JPWO2012132835A1 (en) 2011-03-25 2014-07-28 三洋電機株式会社 Solar cell
JP5820989B2 (en) 2011-03-25 2015-11-24 パナソニックIpマネジメント株式会社 Method for manufacturing photoelectric conversion element
JP5820987B2 (en) 2011-03-25 2015-11-24 パナソニックIpマネジメント株式会社 Solar cell
WO2012132838A1 (en) 2011-03-25 2012-10-04 三洋電機株式会社 Method for producing photoelectric conversion device
JP5842173B2 (en) 2011-03-28 2016-01-13 パナソニックIpマネジメント株式会社 Photoelectric conversion device and method of manufacturing photoelectric conversion device
CN103460394B (en) 2011-03-28 2015-11-25 三洋电机株式会社 Photoelectric conversion device and manufacture method thereof
JPWO2012132766A1 (en) 2011-03-28 2014-07-28 三洋電機株式会社 Photoelectric conversion device and method of manufacturing photoelectric conversion device
WO2013002008A1 (en) * 2011-06-29 2013-01-03 三洋電機株式会社 Solar cell
EP2731147B1 (en) * 2011-07-04 2021-03-24 Panasonic Intellectual Property Management Co., Ltd. Solar cell module
US8889981B2 (en) 2011-10-18 2014-11-18 Samsung Sdi Co., Ltd. Photoelectric device
JP2013089757A (en) * 2011-10-18 2013-05-13 Sharp Corp Solar module, method of manufacturing the same, and back electrode type solar battery cell
JP5820265B2 (en) * 2011-12-21 2015-11-24 シャープ株式会社 Back electrode type solar cell and manufacturing method thereof
JP2013191657A (en) * 2012-03-13 2013-09-26 Sharp Corp Photoelectric conversion element and manufacturing method thereof
WO2013145008A1 (en) * 2012-03-29 2013-10-03 三菱電機株式会社 Photovoltaic element, method of manufacturing same, and solar cell module
JP5906459B2 (en) * 2012-03-30 2016-04-20 パナソニックIpマネジメント株式会社 Solar cell and manufacturing method thereof
JP6089306B2 (en) 2012-03-30 2017-03-08 パナソニックIpマネジメント株式会社 Solar cell and manufacturing method thereof
WO2013146271A1 (en) 2012-03-30 2013-10-03 三洋電機株式会社 Solar cell and method for manufacturing same
JP2014072209A (en) * 2012-09-27 2014-04-21 Sharp Corp Photoelectric conversion element and photoelectric conversion element manufacturing method
JP6284522B2 (en) * 2013-03-28 2018-02-28 シャープ株式会社 Photoelectric conversion element, photoelectric conversion module, and photovoltaic power generation system
JP6425195B2 (en) 2013-09-24 2018-11-21 パナソニックIpマネジメント株式会社 Solar cell
JP2015177176A (en) * 2014-03-18 2015-10-05 シャープ株式会社 Heterojunction back contact cell and method of manufacturing heterojunction back contact cell
JP6639407B2 (en) * 2014-11-07 2020-02-05 シャープ株式会社 Photoelectric conversion element
JP2016143862A (en) * 2015-02-05 2016-08-08 シャープ株式会社 Photoelectric conversion element and method for manufacturing photoelectric conversion element
WO2016158977A1 (en) 2015-03-31 2016-10-06 株式会社カネカ Solar battery and solar battery module
WO2019053957A1 (en) * 2017-09-13 2019-03-21 株式会社カネカ Solar cell, solar cell production method, and solar cell module
EP3664156A4 (en) 2017-12-04 2020-12-09 Kaneka Corporation Solar cell and electronic device provided with said solar cell
CN111742418B (en) 2018-02-23 2023-08-29 株式会社钟化 Solar cell and electronic device provided with same
JP7228561B2 (en) 2018-02-23 2023-02-24 株式会社カネカ Solar cell manufacturing method
JP7270598B2 (en) 2018-02-23 2023-05-10 株式会社カネカ Solar cell and electronic device equipped with the solar cell
JP7397732B2 (en) 2020-03-24 2023-12-13 株式会社カネカ How to manufacture solar cells

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6114769A (en) * 1984-06-29 1986-01-22 Sanyo Electric Co Ltd Photovoltaic device
JPH065779B2 (en) * 1986-02-21 1994-01-19 株式会社富士電機総合研究所 Method for manufacturing solar cell device
JP2951063B2 (en) * 1991-01-29 1999-09-20 三洋電機株式会社 Integrated solar cell module
JP4155899B2 (en) * 2003-09-24 2008-09-24 三洋電機株式会社 Photovoltaic element manufacturing method
US20060130891A1 (en) * 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells
US20080000522A1 (en) * 2006-06-30 2008-01-03 General Electric Company Photovoltaic device which includes all-back-contact configuration; and related processes

Similar Documents

Publication Publication Date Title
JP2009200267A5 (en)
JP2010283339A5 (en) Photoelectric conversion device
JP2010177264A5 (en)
WO2011012382A3 (en) Silicon wafer based structure for heterostructure solar cells
JP2011066400A5 (en)
JP2014075526A (en) Photoelectric conversion element and photoelectric conversion element manufacturing method
JP2013123043A5 (en)
JP2011014892A5 (en)
JP2013131586A5 (en) Back electrode type solar cell and manufacturing method thereof
JP2012129518A5 (en) Method for manufacturing photoelectric conversion device
MY184055A (en) Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells
JP2014116577A5 (en)
WO2009090123A3 (en) Using 3d integrated diffractive gratings in solar cells
JP2013093543A5 (en)
WO2009110409A1 (en) Solar cell
WO2009069544A1 (en) Silicon thin film photoelectric conversion device
JP2009051005A5 (en)
JP2013197555A5 (en)
WO2018001182A1 (en) Photovoltaic cell, photovoltaic cell assembly, photovoltaic array, and solar cell
JP2013115262A5 (en)
WO2013090961A3 (en) Thermoelectric element
JP2013191657A5 (en)
TWI408821B (en)
JP3198451U (en) 4 busbar solar cells
JP2013125890A5 (en)