JP2013197555A5 - - Google Patents
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- JP2013197555A5 JP2013197555A5 JP2012066454A JP2012066454A JP2013197555A5 JP 2013197555 A5 JP2013197555 A5 JP 2013197555A5 JP 2012066454 A JP2012066454 A JP 2012066454A JP 2012066454 A JP2012066454 A JP 2012066454A JP 2013197555 A5 JP2013197555 A5 JP 2013197555A5
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- JP
- Japan
- Prior art keywords
- semiconductor substrate
- amorphous film
- contact
- photoelectric conversion
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 30
- 239000000758 substrate Substances 0.000 claims 30
- 239000010410 layer Substances 0.000 claims 17
- 238000006243 chemical reaction Methods 0.000 claims 9
- 239000012535 impurity Substances 0.000 claims 7
- 238000004519 manufacturing process Methods 0.000 claims 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 2
- 239000011247 coating layer Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
Claims (9)
前記半導体基板の一方の表面に接して設けられ、前記第１の導電型と反対の第２の導電型を有する第１の不純物層を少なくとも含む第１の非晶質膜と、
前記半導体基板の面内方向において前記第１の非晶質膜に隣接して前記半導体基板の一方の表面に接して設けられ、前記第１の導電型を有する第２の不純物層を少なくとも含む第２の非晶質膜とを備え、
前記第１および第２の非晶質膜の一方と前記半導体基板との界面は、前記半導体基板の厚み方向において、前記第１および第２の非晶質膜の他方と前記半導体基板との界面と異なる位置に存在する、光電変換素子。 A semiconductor substrate made of single crystal silicon having a first conductivity type;
A first amorphous film provided in contact with one surface of the semiconductor substrate and including at least a first impurity layer having a second conductivity type opposite to the first conductivity type;
A first impurity layer provided at least in contact with one surface of the semiconductor substrate adjacent to the first amorphous film in an in-plane direction of the semiconductor substrate, the second impurity layer having at least a first conductivity type Two amorphous films,
The interface between one of the first and second amorphous films and the semiconductor substrate is the interface between the other of the first and second amorphous films and the semiconductor substrate in the thickness direction of the semiconductor substrate. A photoelectric conversion element that exists in a different position.
前記半導体基板の一方の表面に接して設けられ、ｉ型の導電型を有する第１のノンドープ層と、
前記第１のノンドープ層に接して設けられた前記第１の不純物層とを含み、
前記第２の非晶質膜は、
前記半導体基板の一方の表面に接して設けられ、ｉ型の導電型を有する第２のノンドープ層と、
前記第２のノンドープ層に接して設けられた前記第２の不純物層とを含む、請求項１から請求項４のいずれか１項に記載の光電変換素子。 The first amorphous film includes:
A first non-doped layer provided in contact with one surface of the semiconductor substrate and having an i-type conductivity;
Including the first impurity layer provided in contact with the first non-doped layer,
The second amorphous film is
A second non-doped layer provided in contact with one surface of the semiconductor substrate and having an i-type conductivity;
The photoelectric conversion device according to claim 1, further comprising: the second impurity layer provided in contact with the second non-doped layer.
前記半導体基板の面内方向における前記一方の非晶質膜の一部分と、該一部分に接する前記半導体基板の一部分とを除去する第２の工程と、
前記一方の非晶質膜の残部上に被覆層を形成する第３の工程と、
前記半導体基板の一方の表面および前記被覆層上に前記第１および第２の非晶質膜の他方の非晶質膜を形成する第４の工程と、
前記被覆層を除去する第５の工程とを備える光電変換素子の製造方法。 A first non-layer including at least a first impurity layer having a second conductivity type opposite to the first conductivity type in contact with one surface of the semiconductor substrate made of single crystal silicon having the first conductivity type. A first step of forming one of the crystalline film and the second amorphous film including at least the second impurity layer having the first conductivity type;
A second step of removing a part of the one amorphous film in an in-plane direction of the semiconductor substrate and a part of the semiconductor substrate in contact with the part;
A third step of forming a coating layer on the remaining portion of the one amorphous film;
A fourth step of forming the other amorphous film of the first and second amorphous films on one surface of the semiconductor substrate and the covering layer;
A manufacturing method of a photoelectric conversion element provided with the 5th process of removing the above-mentioned covering layer.
前記第２の工程において、前記第１の非晶質膜の一部分と、該一部分に接する前記半導体基板の一部分とを除去し、
前記第４の工程において、前記半導体基板の一方の表面および前記被覆層上に前記第２の非晶質膜を形成する、請求項６または請求項７に記載の光電変換素子の製造方法。 Forming the first amorphous film in contact with one surface of the semiconductor substrate in the first step;
Removing a part of the first amorphous film and a part of the semiconductor substrate in contact with the part in the second step;
8. The method of manufacturing a photoelectric conversion element according to claim 6, wherein, in the fourth step, the second amorphous film is formed on one surface of the semiconductor substrate and the covering layer.
前記第２の工程において、前記第２の非晶質膜の一部分と、該一部分に接する前記半導体基板の一部分とを除去し、
前記第４の工程において、前記半導体基板の一方の表面および前記被覆層上に前記第１の非晶質膜を形成する、請求項６または請求項７に記載の光電変換素子の製造方法。 Forming the second amorphous film in contact with one surface of the semiconductor substrate in the first step;
Removing a part of the second amorphous film and a part of the semiconductor substrate in contact with the part in the second step;
8. The method of manufacturing a photoelectric conversion element according to claim 6, wherein, in the fourth step, the first amorphous film is formed on one surface of the semiconductor substrate and the covering layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012066454A JP6032911B2 (en) | 2012-03-23 | 2012-03-23 | Photoelectric conversion element and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012066454A JP6032911B2 (en) | 2012-03-23 | 2012-03-23 | Photoelectric conversion element and manufacturing method thereof |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013197555A JP2013197555A (en) | 2013-09-30 |
| JP2013197555A5 true JP2013197555A5 (en) | 2015-03-12 |
| JP6032911B2 JP6032911B2 (en) | 2016-11-30 |
Family
ID=49396082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012066454A Active JP6032911B2 (en) | 2012-03-23 | 2012-03-23 | Photoelectric conversion element and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6032911B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112015000559T5 (en) | 2014-01-29 | 2016-12-15 | Panasonic Intellectual Property Management Co., Ltd. | solar cell |
| JP6153885B2 (en) * | 2014-05-09 | 2017-06-28 | 信越化学工業株式会社 | Back junction solar cell |
| DE102015112046A1 (en) * | 2015-07-23 | 2017-01-26 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Method for producing unilaterally arranged structured contacts in a layer arrangement for a photovoltaic component |
| JP7183245B2 (en) * | 2018-02-23 | 2022-12-05 | 株式会社カネカ | Solar cell manufacturing method |
| JP2021129085A (en) * | 2020-02-17 | 2021-09-02 | パナソニック株式会社 | Solar cell |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4155899B2 (en) * | 2003-09-24 | 2008-09-24 | 三洋電機株式会社 | Photovoltaic element manufacturing method |
| FR2906406B1 (en) * | 2006-09-26 | 2008-12-19 | Commissariat Energie Atomique | PROCESS FOR PRODUCING A PHOTOVOLTAIC CELL WITH REAR-SIDE HETEROJUNCTION |
| WO2009096539A1 (en) * | 2008-01-30 | 2009-08-06 | Kyocera Corporation | Solar battery element and solar battery element manufacturing method |
| JP5347409B2 (en) * | 2008-09-29 | 2013-11-20 | 三洋電機株式会社 | Solar cell and manufacturing method thereof |
| JP5518347B2 (en) * | 2009-02-26 | 2014-06-11 | 三洋電機株式会社 | Manufacturing method of solar cell |
| CN102349166A (en) * | 2009-03-10 | 2012-02-08 | 三洋电机株式会社 | Process for producing solar battery, and solar battery |
| WO2011093329A1 (en) * | 2010-01-26 | 2011-08-04 | 三洋電機株式会社 | Solar cell and method for producing same |
-
2012
- 2012-03-23 JP JP2012066454A patent/JP6032911B2/en active Active
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