JP2013191656A5 - - Google Patents
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- JP2013191656A5 JP2013191656A5 JP2012055495A JP2012055495A JP2013191656A5 JP 2013191656 A5 JP2013191656 A5 JP 2013191656A5 JP 2012055495 A JP2012055495 A JP 2012055495A JP 2012055495 A JP2012055495 A JP 2012055495A JP 2013191656 A5 JP2013191656 A5 JP 2013191656A5
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- JP
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- Prior art keywords
- amorphous film
- contact
- film
- amorphous
- conversion element
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- 238000006243 chemical reaction Methods 0.000 claims 11
- 239000004065 semiconductor Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 2
- 239000000463 material Substances 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
Claims (8)
前記半導体基板の一方の表面に接して設けられ、ｉ型の導電型を有する第１の非晶質膜と、
前記第１の非晶質膜に接して設けられ、前記第１の導電型と反対の第２の導電型を有する第２の非晶質膜と、
前記半導体基板の面内方向において前記第２の非晶質膜に隣接し、かつ、前記第１の非晶質膜に接して設けられ、前記第１の導電型を有する第３の非晶質膜とを備え、
前記第１の非晶質膜において、前記第２および第３の非晶質膜の少なくとも一方と接する部分の膜厚が前記第２および第３の非晶質膜の少なくとも一方と接しない部分の膜厚よりも薄い、光電変換素子。 A semiconductor substrate made of single crystal silicon having a first conductivity type;
A first amorphous film provided in contact with one surface of the semiconductor substrate and having an i-type conductivity;
A second amorphous film provided in contact with the first amorphous film and having a second conductivity type opposite to the first conductivity type;
A third amorphous material that is provided adjacent to the second amorphous film in the in-plane direction of the semiconductor substrate and in contact with the first amorphous film and having the first conductivity type With a membrane,
In the first amorphous film, the thickness of the portion in contact with at least one of the second and third amorphous films is not in contact with at least one of the second and third amorphous films. A photoelectric conversion element that is thinner than the film thickness.
前記半導体基板の面内方向において前記第１の非晶質膜の一部分を除去する第２の工程と、
前記第１の導電型と反対の第２の導電型を有する第２の非晶質膜を前記第１の非晶質膜に接して形成する第３の工程と、
前記半導体基板の面内方向において前記第２の非晶質膜に隣接し、かつ、前記第１の非晶質膜に接して、前記第１の導電型を有する第３の非晶質膜を形成する第４の工程とを備え、
前記第３および第４の工程の少なくとも一方において、前記第２および第３の非晶質膜の少なくとも一方は、前記一部分が除去された第１の非晶質膜に接して形成される、光電変換素子の製造方法。 A first step of forming a first amorphous film having an i-type conductivity type in contact with one surface of a semiconductor substrate made of single crystal silicon having a first conductivity type;
A second step of removing a portion of the first amorphous film in an in-plane direction of the semiconductor substrate;
A third step of forming a second amorphous film having a second conductivity type opposite to the first conductivity type in contact with the first amorphous film;
A third amorphous film having the first conductivity type is adjacent to the second amorphous film in the in-plane direction of the semiconductor substrate and in contact with the first amorphous film. A fourth step of forming,
In at least one of the third and fourth steps, at least one of the second and third amorphous films is formed in contact with the first amorphous film from which the part has been removed. A method for manufacturing a conversion element.
前記第４の工程において、前記一部分が除去された第１の非晶質膜に接して前記第３の非晶質膜を形成する、請求項５に記載の光電変換素子の製造方法。 Forming the second amorphous film in contact with the first amorphous film from which the part has been removed in the third step;
6. The method of manufacturing a photoelectric conversion element according to claim 5, wherein, in the fourth step, the third amorphous film is formed in contact with the first amorphous film from which the part has been removed.
前記第４の工程において、前記一部分が除去されていない第１の非晶質膜に接して前記第３の非晶質膜を形成する、請求項５に記載の光電変換素子の製造方法。 Forming the second amorphous film in contact with the first amorphous film from which the part has been removed in the third step;
6. The method of manufacturing a photoelectric conversion element according to claim 5, wherein, in the fourth step, the third amorphous film is formed in contact with the first amorphous film from which the part has not been removed.
前記第４の工程において、前記一部分が除去された第１の非晶質膜に接して前記第３の非晶質膜を形成する、請求項５に記載の光電変換素子の製造方法。 Forming the second amorphous film in contact with the first amorphous film from which the part has not been removed in the third step;
6. The method of manufacturing a photoelectric conversion element according to claim 5, wherein, in the fourth step, the third amorphous film is formed in contact with the first amorphous film from which the part has been removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012055495A JP2013191656A (en) | 2012-03-13 | 2012-03-13 | Photoelectric conversion element and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012055495A JP2013191656A (en) | 2012-03-13 | 2012-03-13 | Photoelectric conversion element and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013191656A JP2013191656A (en) | 2013-09-26 |
| JP2013191656A5 true JP2013191656A5 (en) | 2015-03-12 |
Family
ID=49391636
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012055495A Pending JP2013191656A (en) | 2012-03-13 | 2012-03-13 | Photoelectric conversion element and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2013191656A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016076300A1 (en) * | 2014-11-14 | 2016-05-19 | シャープ株式会社 | Photoelectric conversion element |
| WO2016076299A1 (en) * | 2014-11-14 | 2016-05-19 | シャープ株式会社 | Photoelectric converter |
| JP6476015B2 (en) * | 2015-03-06 | 2019-02-27 | シャープ株式会社 | Photoelectric conversion element and manufacturing method thereof |
| JP2018170482A (en) * | 2017-03-30 | 2018-11-01 | パナソニック株式会社 | Solar battery cell, and method for manufacturing solar battery cell |
| JP7221276B2 (en) * | 2018-03-23 | 2023-02-13 | 株式会社カネカ | SOLAR CELL MANUFACTURING METHOD AND SOLAR CELL |
| WO2020217999A1 (en) * | 2019-04-23 | 2020-10-29 | 株式会社カネカ | Method for manufacturing solar cell and solar cell |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11112011A (en) * | 1997-09-30 | 1999-04-23 | Sanyo Electric Co Ltd | Manufacture of photovolatic element |
| JP4511146B2 (en) * | 2003-09-26 | 2010-07-28 | 三洋電機株式会社 | Photovoltaic element and manufacturing method thereof |
| JP5174635B2 (en) * | 2008-11-28 | 2013-04-03 | 京セラ株式会社 | Solar cell element |
-
2012
- 2012-03-13 JP JP2012055495A patent/JP2013191656A/en active Pending
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