JP2011204927A5 - - Google Patents

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Publication number
JP2011204927A5
JP2011204927A5 JP2010071085A JP2010071085A JP2011204927A5 JP 2011204927 A5 JP2011204927 A5 JP 2011204927A5 JP 2010071085 A JP2010071085 A JP 2010071085A JP 2010071085 A JP2010071085 A JP 2010071085A JP 2011204927 A5 JP2011204927 A5 JP 2011204927A5
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JP
Japan
Prior art keywords
forming
conductivity type
region
insulating film
capacitive insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2010071085A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011204927A (ja
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Publication date
Application filed filed Critical
Priority to JP2010071085A priority Critical patent/JP2011204927A/ja
Priority claimed from JP2010071085A external-priority patent/JP2011204927A/ja
Priority to US13/070,267 priority patent/US8247303B2/en
Publication of JP2011204927A publication Critical patent/JP2011204927A/ja
Priority to US13/552,172 priority patent/US8710626B2/en
Publication of JP2011204927A5 publication Critical patent/JP2011204927A5/ja
Withdrawn legal-status Critical Current

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JP2010071085A 2010-03-25 2010-03-25 半導体装置およびその製造方法 Withdrawn JP2011204927A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010071085A JP2011204927A (ja) 2010-03-25 2010-03-25 半導体装置およびその製造方法
US13/070,267 US8247303B2 (en) 2010-03-25 2011-03-23 Semiconductor device and method of manufacturing the same
US13/552,172 US8710626B2 (en) 2010-03-25 2012-07-18 Semiconductor device having trapezoidal shaped trenches

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010071085A JP2011204927A (ja) 2010-03-25 2010-03-25 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2011204927A JP2011204927A (ja) 2011-10-13
JP2011204927A5 true JP2011204927A5 (enExample) 2013-02-28

Family

ID=44655415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010071085A Withdrawn JP2011204927A (ja) 2010-03-25 2010-03-25 半導体装置およびその製造方法

Country Status (2)

Country Link
US (2) US8247303B2 (enExample)
JP (1) JP2011204927A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106298445A (zh) * 2015-06-26 2017-01-04 中芯国际集成电路制造(上海)有限公司 Pip电容器的制作方法、pip电容器及eeprom存储单元
US10056503B2 (en) * 2016-10-25 2018-08-21 International Business Machines Corporation MIS capacitor for finned semiconductor structure
JP7052867B2 (ja) * 2018-04-27 2022-04-12 株式会社村田製作所 キャパシタ
CN112530933B (zh) * 2019-09-18 2024-03-22 铠侠股份有限公司 半导体装置
CN111951721B (zh) * 2020-08-24 2021-11-02 上海天马微电子有限公司 驱动背板、发光面板、显示装置以及成型方法
CN119730257A (zh) * 2024-12-06 2025-03-28 武汉新芯集成电路股份有限公司 一种可变电容器件及其制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5057887A (en) * 1989-05-14 1991-10-15 Texas Instruments Incorporated High density dynamic ram cell
US5111259A (en) * 1989-07-25 1992-05-05 Texas Instruments Incorporated Trench capacitor memory cell with curved capacitors
JP2616665B2 (ja) * 1993-07-26 1997-06-04 日本電気株式会社 半導体装置の製造方法
JP3396553B2 (ja) 1994-02-04 2003-04-14 三菱電機株式会社 半導体装置の製造方法及び半導体装置
JP2002222924A (ja) * 2001-01-25 2002-08-09 Sharp Corp 半導体装置の製造方法
US6829127B1 (en) * 2003-03-05 2004-12-07 Altera Corporation High performance capacitor structure

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