JP2011204927A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP2011204927A
JP2011204927A JP2010071085A JP2010071085A JP2011204927A JP 2011204927 A JP2011204927 A JP 2011204927A JP 2010071085 A JP2010071085 A JP 2010071085A JP 2010071085 A JP2010071085 A JP 2010071085A JP 2011204927 A JP2011204927 A JP 2011204927A
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JP
Japan
Prior art keywords
capacitor
forming
insulating film
trench
lower electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2010071085A
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English (en)
Japanese (ja)
Other versions
JP2011204927A5 (enExample
Inventor
Ayako Inoue
亜矢子 井上
Naoto Saito
直人 斎藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP2010071085A priority Critical patent/JP2011204927A/ja
Priority to US13/070,267 priority patent/US8247303B2/en
Publication of JP2011204927A publication Critical patent/JP2011204927A/ja
Priority to US13/552,172 priority patent/US8710626B2/en
Publication of JP2011204927A5 publication Critical patent/JP2011204927A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H10D1/047—Manufacture or treatment of capacitors having potential barriers, e.g. varactors of conductor-insulator-semiconductor capacitors, e.g. trench capacitors

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  • Semiconductor Integrated Circuits (AREA)
JP2010071085A 2010-03-25 2010-03-25 半導体装置およびその製造方法 Withdrawn JP2011204927A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010071085A JP2011204927A (ja) 2010-03-25 2010-03-25 半導体装置およびその製造方法
US13/070,267 US8247303B2 (en) 2010-03-25 2011-03-23 Semiconductor device and method of manufacturing the same
US13/552,172 US8710626B2 (en) 2010-03-25 2012-07-18 Semiconductor device having trapezoidal shaped trenches

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010071085A JP2011204927A (ja) 2010-03-25 2010-03-25 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2011204927A true JP2011204927A (ja) 2011-10-13
JP2011204927A5 JP2011204927A5 (enExample) 2013-02-28

Family

ID=44655415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010071085A Withdrawn JP2011204927A (ja) 2010-03-25 2010-03-25 半導体装置およびその製造方法

Country Status (2)

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US (2) US8247303B2 (enExample)
JP (1) JP2011204927A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019208226A1 (ja) * 2018-04-27 2019-10-31 株式会社村田製作所 キャパシタ

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106298445A (zh) * 2015-06-26 2017-01-04 中芯国际集成电路制造(上海)有限公司 Pip电容器的制作方法、pip电容器及eeprom存储单元
US10056503B2 (en) * 2016-10-25 2018-08-21 International Business Machines Corporation MIS capacitor for finned semiconductor structure
CN112530933B (zh) * 2019-09-18 2024-03-22 铠侠股份有限公司 半导体装置
CN111951721B (zh) * 2020-08-24 2021-11-02 上海天马微电子有限公司 驱动背板、发光面板、显示装置以及成型方法
CN119730257A (zh) * 2024-12-06 2025-03-28 武汉新芯集成电路股份有限公司 一种可变电容器件及其制造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03129769A (ja) * 1989-05-14 1991-06-03 Texas Instr Inc <Ti> ダイナミックｒａｍ記憶素子及び製造方法
JPH0745791A (ja) * 1993-07-26 1995-02-14 Nec Corp 半導体装置の製造方法
JP2002222924A (ja) * 2001-01-25 2002-08-09 Sharp Corp 半導体装置の製造方法
US6829127B1 (en) * 2003-03-05 2004-12-07 Altera Corporation High performance capacitor structure

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5111259A (en) * 1989-07-25 1992-05-05 Texas Instruments Incorporated Trench capacitor memory cell with curved capacitors
JP3396553B2 (ja) 1994-02-04 2003-04-14 三菱電機株式会社 半導体装置の製造方法及び半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03129769A (ja) * 1989-05-14 1991-06-03 Texas Instr Inc <Ti> ダイナミックｒａｍ記憶素子及び製造方法
JPH0745791A (ja) * 1993-07-26 1995-02-14 Nec Corp 半導体装置の製造方法
JP2002222924A (ja) * 2001-01-25 2002-08-09 Sharp Corp 半導体装置の製造方法
US6829127B1 (en) * 2003-03-05 2004-12-07 Altera Corporation High performance capacitor structure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019208226A1 (ja) * 2018-04-27 2019-10-31 株式会社村田製作所 キャパシタ
JPWO2019208226A1 (ja) * 2018-04-27 2021-01-07 株式会社村田製作所 キャパシタ
JP7052867B2 (ja) 2018-04-27 2022-04-12 株式会社村田製作所 キャパシタ
US11488784B2 (en) 2018-04-27 2022-11-01 Murata Manufacturing Co., Ltd. Capacitor

Also Published As

Publication number Publication date
US8247303B2 (en) 2012-08-21
US8710626B2 (en) 2014-04-29
US20110233724A1 (en) 2011-09-29
US20120280359A1 (en) 2012-11-08

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