JP2019161047A5 - - Google Patents

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Publication number
JP2019161047A5
JP2019161047A5 JP2018046725A JP2018046725A JP2019161047A5 JP 2019161047 A5 JP2019161047 A5 JP 2019161047A5 JP 2018046725 A JP2018046725 A JP 2018046725A JP 2018046725 A JP2018046725 A JP 2018046725A JP 2019161047 A5 JP2019161047 A5 JP 2019161047A5
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JP
Japan
Prior art keywords
semiconductor layer
conductivity type
light receiving
receiving device
concentration
Prior art date
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Application number
JP2018046725A
Other languages
English (en)
Japanese (ja)
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JP6878338B2 (ja
JP2019161047A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2018046725A external-priority patent/JP6878338B2/ja
Priority to JP2018046725A priority Critical patent/JP6878338B2/ja
Priority to US16/130,375 priority patent/US10497823B2/en
Priority to EP18200351.7A priority patent/EP3540788B1/en
Priority to KR1020180128944A priority patent/KR20190108470A/ko
Priority to CN201811274379.XA priority patent/CN110277414A/zh
Publication of JP2019161047A publication Critical patent/JP2019161047A/ja
Publication of JP2019161047A5 publication Critical patent/JP2019161047A5/ja
Publication of JP6878338B2 publication Critical patent/JP6878338B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2018046725A 2018-03-14 2018-03-14 受光装置および受光装置の製造方法 Expired - Fee Related JP6878338B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018046725A JP6878338B2 (ja) 2018-03-14 2018-03-14 受光装置および受光装置の製造方法
US16/130,375 US10497823B2 (en) 2018-03-14 2018-09-13 Light receiving device and method of manufacturing light receiving device
EP18200351.7A EP3540788B1 (en) 2018-03-14 2018-10-15 Light receiving device and method of manufacturing light receiving device
KR1020180128944A KR20190108470A (ko) 2018-03-14 2018-10-26 수광 장치, 및 수광 장치의 제조 방법
CN201811274379.XA CN110277414A (zh) 2018-03-14 2018-10-30 受光装置及受光装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018046725A JP6878338B2 (ja) 2018-03-14 2018-03-14 受光装置および受光装置の製造方法

Publications (3)

Publication Number Publication Date
JP2019161047A JP2019161047A (ja) 2019-09-19
JP2019161047A5 true JP2019161047A5 (enExample) 2020-02-20
JP6878338B2 JP6878338B2 (ja) 2021-05-26

Family

ID=63857793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018046725A Expired - Fee Related JP6878338B2 (ja) 2018-03-14 2018-03-14 受光装置および受光装置の製造方法

Country Status (5)

Country Link
US (1) US10497823B2 (enExample)
EP (1) EP3540788B1 (enExample)
JP (1) JP6878338B2 (enExample)
KR (1) KR20190108470A (enExample)
CN (1) CN110277414A (enExample)

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US10777597B2 (en) 2017-03-22 2020-09-15 Sony Semiconductor Solutions Corporation Imaging device
US11393870B2 (en) * 2018-12-18 2022-07-19 Canon Kabushiki Kaisha Photoelectric conversion device, imaging system, and mobile apparatus
JP7328868B2 (ja) 2019-10-30 2023-08-17 株式会社東芝 光検出器、光検出システム、ライダー装置、及び車
CN114616671B (zh) * 2019-10-30 2025-07-29 松下知识产权经营株式会社 光检测器
JP7309647B2 (ja) * 2020-03-24 2023-07-18 株式会社東芝 受光装置及び半導体装置
JP7598311B2 (ja) * 2021-12-14 2024-12-11 株式会社東芝 半導体装置
WO2025191768A1 (ja) * 2024-03-14 2025-09-18 ソニーセミコンダクタソリューションズ株式会社 光検出装置および光検出装置の製造方法ならびに測距装置
WO2025206731A1 (ko) * 2024-03-29 2025-10-02 엘지이노텍 주식회사 수광 소자 및 라이다 장치

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JPS6032658B2 (ja) 1979-07-18 1985-07-29 住友ノ−ガタック株式会社 ヒ−トサイクル性に優れる合成樹脂組成物
JPS5911629A (ja) 1982-07-12 1984-01-21 Toshiba Corp 表面清浄化方法
JPS5927334A (ja) 1982-08-06 1984-02-13 Hitachi Ltd ダイレクトメモリアクセスメモリ装置
US6858829B2 (en) * 2001-06-20 2005-02-22 Agilent Technologies, Inc. Avalanche photodiode array biasing device and avalanche photodiode structure
JP4841834B2 (ja) * 2004-12-24 2011-12-21 浜松ホトニクス株式会社 ホトダイオードアレイ
US7667400B1 (en) * 2006-06-09 2010-02-23 Array Optronix, Inc. Back-illuminated Si photomultipliers: structure and fabrication methods
TWI443817B (zh) 2006-07-03 2014-07-01 濱松赫德尼古斯股份有限公司 Photodiode array
JP5926921B2 (ja) * 2011-10-21 2016-05-25 浜松ホトニクス株式会社 光検出装置
JP5791461B2 (ja) 2011-10-21 2015-10-07 浜松ホトニクス株式会社 光検出装置
JP5832852B2 (ja) 2011-10-21 2015-12-16 浜松ホトニクス株式会社 光検出装置
JP2014241543A (ja) * 2013-06-12 2014-12-25 株式会社東芝 光検出装置およびｃｔ装置
JP6090060B2 (ja) * 2013-08-23 2017-03-08 株式会社豊田中央研究所 シングルフォトンアバランシェダイオード
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JP6552850B2 (ja) 2015-03-16 2019-07-31 株式会社東芝 光検出装置
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JP5911629B2 (ja) 2015-08-04 2016-04-27 浜松ホトニクス株式会社 光検出装置
JP5927334B2 (ja) 2015-10-28 2016-06-01 浜松ホトニクス株式会社 光検出装置
US20190103501A1 (en) * 2016-03-30 2019-04-04 Sony Corporation Light-receiving device, imaging unit, and electronic apparatus
IT201600079027A1 (it) * 2016-07-27 2018-01-27 St Microelectronics Srl Schiera di fotodiodi a valanga operanti in modalita' geiger per la rilevazione di radiazione infrarossa
JP6649207B2 (ja) * 2016-08-26 2020-02-19 株式会社東芝 受光装置
JP7058479B2 (ja) * 2016-10-18 2022-04-22 ソニーセミコンダクタソリューションズ株式会社 光検出器
JP6639427B2 (ja) * 2017-01-13 2020-02-05 株式会社東芝 受光装置
JP6932580B2 (ja) * 2017-08-04 2021-09-08 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子

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