CN110277414A - 受光装置及受光装置的制造方法 - Google Patents

受光装置及受光装置的制造方法 Download PDF

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Publication number
CN110277414A
CN110277414A CN201811274379.XA CN201811274379A CN110277414A CN 110277414 A CN110277414 A CN 110277414A CN 201811274379 A CN201811274379 A CN 201811274379A CN 110277414 A CN110277414 A CN 110277414A
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CN
China
Prior art keywords
semiconductor layer
receiving device
light receiving
concentration
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201811274379.XA
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English (en)
Chinese (zh)
Inventor
国分弘一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Publication of CN110277414A publication Critical patent/CN110277414A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Light Receiving Elements (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
CN201811274379.XA 2018-03-14 2018-10-30 受光装置及受光装置的制造方法 Pending CN110277414A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-046725 2018-03-14
JP2018046725A JP6878338B2 (ja) 2018-03-14 2018-03-14 受光装置および受光装置の製造方法

Publications (1)

Publication Number Publication Date
CN110277414A true CN110277414A (zh) 2019-09-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811274379.XA Pending CN110277414A (zh) 2018-03-14 2018-10-30 受光装置及受光装置的制造方法

Country Status (5)

Country Link
US (1) US10497823B2 (enExample)
EP (1) EP3540788B1 (enExample)
JP (1) JP6878338B2 (enExample)
KR (1) KR20190108470A (enExample)
CN (1) CN110277414A (enExample)

Cited By (2)

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CN113451336A (zh) * 2020-03-24 2021-09-28 株式会社东芝 受光装置以及半导体装置
JP2023087894A (ja) * 2021-12-14 2023-06-26 株式会社東芝 半導体装置

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* Cited by examiner, † Cited by third party
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US10777597B2 (en) 2017-03-22 2020-09-15 Sony Semiconductor Solutions Corporation Imaging device
US11393870B2 (en) * 2018-12-18 2022-07-19 Canon Kabushiki Kaisha Photoelectric conversion device, imaging system, and mobile apparatus
JP7328868B2 (ja) 2019-10-30 2023-08-17 株式会社東芝 光検出器、光検出システム、ライダー装置、及び車
WO2021085484A1 (ja) * 2019-10-30 2021-05-06 パナソニックＩｐマネジメント株式会社 光検出器
WO2025191768A1 (ja) * 2024-03-14 2025-09-18 ソニーセミコンダクタソリューションズ株式会社 光検出装置および光検出装置の製造方法ならびに測距装置
WO2025206731A1 (ko) * 2024-03-29 2025-10-02 엘지이노텍 주식회사 수광 소자 및 라이다 장치

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US20090121306A1 (en) * 2004-12-24 2009-05-14 Yoshitaka Ishikawa Photodiode Array
CN105575982A (zh) * 2014-11-04 2016-05-11 株式会社理光 固体摄像元件
US20180061871A1 (en) * 2016-08-26 2018-03-01 Kabushiki Kaisha Toshiba Light-receiving device having avalanche photodiodes of different types

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JPS5911629A (ja) 1982-07-12 1984-01-21 Toshiba Corp 表面清浄化方法
JPS5927334A (ja) 1982-08-06 1984-02-13 Hitachi Ltd ダイレクトメモリアクセスメモリ装置
US6858829B2 (en) * 2001-06-20 2005-02-22 Agilent Technologies, Inc. Avalanche photodiode array biasing device and avalanche photodiode structure
US7667400B1 (en) * 2006-06-09 2010-02-23 Array Optronix, Inc. Back-illuminated Si photomultipliers: structure and fabrication methods
TWI523209B (zh) 2006-07-03 2016-02-21 濱松赫德尼古斯股份有限公司 光二極體陣列
JP5832852B2 (ja) 2011-10-21 2015-12-16 浜松ホトニクス株式会社 光検出装置
JP5926921B2 (ja) * 2011-10-21 2016-05-25 浜松ホトニクス株式会社 光検出装置
JP5791461B2 (ja) 2011-10-21 2015-10-07 浜松ホトニクス株式会社 光検出装置
JP2014241543A (ja) * 2013-06-12 2014-12-25 株式会社東芝 光検出装置およびｃｔ装置
JP6090060B2 (ja) * 2013-08-23 2017-03-08 株式会社豊田中央研究所 シングルフォトンアバランシェダイオード
JP2015081863A (ja) 2013-10-23 2015-04-27 株式会社東芝 光検出器
US9484386B2 (en) 2013-11-27 2016-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Diffraction grating with multiple periodic widths
JP2016062996A (ja) * 2014-09-16 2016-04-25 株式会社東芝 光検出器
JP6552850B2 (ja) 2015-03-16 2019-07-31 株式会社東芝 光検出装置
KR102667788B1 (ko) * 2015-03-31 2024-05-22 하마마츠 포토닉스 가부시키가이샤 반도체 장치의 제조 방법
JP5911629B2 (ja) 2015-08-04 2016-04-27 浜松ホトニクス株式会社 光検出装置
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WO2017169220A1 (ja) * 2016-03-30 2017-10-05 ソニー株式会社 受光装置、撮像装置および電子機器
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JP7058479B2 (ja) * 2016-10-18 2022-04-22 ソニーセミコンダクタソリューションズ株式会社 光検出器
JP6639427B2 (ja) * 2017-01-13 2020-02-05 株式会社東芝 受光装置
JP6932580B2 (ja) * 2017-08-04 2021-09-08 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子

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US20090121306A1 (en) * 2004-12-24 2009-05-14 Yoshitaka Ishikawa Photodiode Array
CN105575982A (zh) * 2014-11-04 2016-05-11 株式会社理光 固体摄像元件
US20180061871A1 (en) * 2016-08-26 2018-03-01 Kabushiki Kaisha Toshiba Light-receiving device having avalanche photodiodes of different types

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113451336A (zh) * 2020-03-24 2021-09-28 株式会社东芝 受光装置以及半导体装置
CN113451336B (zh) * 2020-03-24 2024-05-17 株式会社东芝 受光装置以及半导体装置
JP2023087894A (ja) * 2021-12-14 2023-06-26 株式会社東芝 半導体装置
JP7598311B2 (ja) 2021-12-14 2024-12-11 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
US10497823B2 (en) 2019-12-03
JP2019161047A (ja) 2019-09-19
KR20190108470A (ko) 2019-09-24
US20190288149A1 (en) 2019-09-19
EP3540788A1 (en) 2019-09-18
EP3540788B1 (en) 2021-05-05
JP6878338B2 (ja) 2021-05-26

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Application publication date: 20190924