KR20190108470A - 수광 장치, 및 수광 장치의 제조 방법 - Google Patents

수광 장치, 및 수광 장치의 제조 방법 Download PDF

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Publication number
KR20190108470A
KR20190108470A KR1020180128944A KR20180128944A KR20190108470A KR 20190108470 A KR20190108470 A KR 20190108470A KR 1020180128944 A KR1020180128944 A KR 1020180128944A KR 20180128944 A KR20180128944 A KR 20180128944A KR 20190108470 A KR20190108470 A KR 20190108470A
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South Korea
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semiconductor layer
type
light receiving
concentration
main surface
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KR1020180128944A
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Korean (ko)
Inventor
고이치 고쿠분
Original Assignee
가부시끼가이샤 도시바
도시바 디바이스 앤 스토리지 가부시키가이샤
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Publication of KR20190108470A publication Critical patent/KR20190108470A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H01L31/107—
    • H01L31/022425—
    • H01L31/036—
    • H01L31/18—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Light Receiving Elements (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
KR1020180128944A 2018-03-14 2018-10-26 수광 장치, 및 수광 장치의 제조 방법 Ceased KR20190108470A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2018-046725 2018-03-14
JP2018046725A JP6878338B2 (ja) 2018-03-14 2018-03-14 受光装置および受光装置の製造方法

Publications (1)

Publication Number Publication Date
KR20190108470A true KR20190108470A (ko) 2019-09-24

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KR1020180128944A Ceased KR20190108470A (ko) 2018-03-14 2018-10-26 수광 장치, 및 수광 장치의 제조 방법

Country Status (5)

Country Link
US (1) US10497823B2 (enExample)
EP (1) EP3540788B1 (enExample)
JP (1) JP6878338B2 (enExample)
KR (1) KR20190108470A (enExample)
CN (1) CN110277414A (enExample)

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EP3462497B1 (en) * 2017-03-22 2025-10-15 Sony Semiconductor Solutions Corporation Imaging device and signal processing device
US11393870B2 (en) * 2018-12-18 2022-07-19 Canon Kabushiki Kaisha Photoelectric conversion device, imaging system, and mobile apparatus
CN114616671B (zh) * 2019-10-30 2025-07-29 松下知识产权经营株式会社 光检测器
JP7328868B2 (ja) * 2019-10-30 2023-08-17 株式会社東芝 光検出器、光検出システム、ライダー装置、及び車
JP7309647B2 (ja) * 2020-03-24 2023-07-18 株式会社東芝 受光装置及び半導体装置
JP7598311B2 (ja) * 2021-12-14 2024-12-11 株式会社東芝 半導体装置
WO2025191768A1 (ja) * 2024-03-14 2025-09-18 ソニーセミコンダクタソリューションズ株式会社 光検出装置および光検出装置の製造方法ならびに測距装置
WO2025206731A1 (ko) * 2024-03-29 2025-10-02 엘지이노텍 주식회사 수광 소자 및 라이다 장치

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JPS6032658B2 (ja) 1979-07-18 1985-07-29 住友ノ−ガタック株式会社 ヒ−トサイクル性に優れる合成樹脂組成物
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US6858829B2 (en) * 2001-06-20 2005-02-22 Agilent Technologies, Inc. Avalanche photodiode array biasing device and avalanche photodiode structure
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US7667400B1 (en) * 2006-06-09 2010-02-23 Array Optronix, Inc. Back-illuminated Si photomultipliers: structure and fabrication methods
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JP5832852B2 (ja) * 2011-10-21 2015-12-16 浜松ホトニクス株式会社 光検出装置
JP5926921B2 (ja) * 2011-10-21 2016-05-25 浜松ホトニクス株式会社 光検出装置
JP5791461B2 (ja) 2011-10-21 2015-10-07 浜松ホトニクス株式会社 光検出装置
JP2014241543A (ja) * 2013-06-12 2014-12-25 株式会社東芝 光検出装置およびｃｔ装置
JP6090060B2 (ja) * 2013-08-23 2017-03-08 株式会社豊田中央研究所 シングルフォトンアバランシェダイオード
JP2015081863A (ja) 2013-10-23 2015-04-27 株式会社東芝 光検出器
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JP2016062996A (ja) * 2014-09-16 2016-04-25 株式会社東芝 光検出器
JP2016092178A (ja) * 2014-11-04 2016-05-23 株式会社リコー 固体撮像素子
JP6552850B2 (ja) 2015-03-16 2019-07-31 株式会社東芝 光検出装置
KR102611325B1 (ko) * 2015-03-31 2023-12-08 하마마츠 포토닉스 가부시키가이샤 반도체 장치
JP5911629B2 (ja) 2015-08-04 2016-04-27 浜松ホトニクス株式会社 光検出装置
JP5927334B2 (ja) 2015-10-28 2016-06-01 浜松ホトニクス株式会社 光検出装置
WO2017169220A1 (ja) * 2016-03-30 2017-10-05 ソニー株式会社 受光装置、撮像装置および電子機器
IT201600079027A1 (it) * 2016-07-27 2018-01-27 St Microelectronics Srl Schiera di fotodiodi a valanga operanti in modalita' geiger per la rilevazione di radiazione infrarossa
JP6649207B2 (ja) * 2016-08-26 2020-02-19 株式会社東芝 受光装置
JP7058479B2 (ja) * 2016-10-18 2022-04-22 ソニーセミコンダクタソリューションズ株式会社 光検出器
JP6639427B2 (ja) * 2017-01-13 2020-02-05 株式会社東芝 受光装置
JP6932580B2 (ja) * 2017-08-04 2021-09-08 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子

Also Published As

Publication number Publication date
US20190288149A1 (en) 2019-09-19
JP2019161047A (ja) 2019-09-19
US10497823B2 (en) 2019-12-03
EP3540788B1 (en) 2021-05-05
JP6878338B2 (ja) 2021-05-26
CN110277414A (zh) 2019-09-24
EP3540788A1 (en) 2019-09-18

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