JP2017139293A5 - - Google Patents

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Publication number
JP2017139293A5
JP2017139293A5 JP2016018117A JP2016018117A JP2017139293A5 JP 2017139293 A5 JP2017139293 A5 JP 2017139293A5 JP 2016018117 A JP2016018117 A JP 2016018117A JP 2016018117 A JP2016018117 A JP 2016018117A JP 2017139293 A5 JP2017139293 A5 JP 2017139293A5
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JP
Japan
Prior art keywords
concentration layer
surface electrode
contact
semiconductor substrate
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016018117A
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English (en)
Japanese (ja)
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JP2017139293A (ja
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Publication date
Application filed filed Critical
Priority to JP2016018117A priority Critical patent/JP2017139293A/ja
Priority claimed from JP2016018117A external-priority patent/JP2017139293A/ja
Priority to PCT/IB2017/000049 priority patent/WO2017134508A1/en
Priority to US16/072,417 priority patent/US20190035944A1/en
Publication of JP2017139293A publication Critical patent/JP2017139293A/ja
Publication of JP2017139293A5 publication Critical patent/JP2017139293A5/ja
Pending legal-status Critical Current

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JP2016018117A 2016-02-02 2016-02-02 ダイオード Pending JP2017139293A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016018117A JP2017139293A (ja) 2016-02-02 2016-02-02 ダイオード
PCT/IB2017/000049 WO2017134508A1 (en) 2016-02-02 2017-01-31 Schottky diode
US16/072,417 US20190035944A1 (en) 2016-02-02 2017-01-31 Schottky diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016018117A JP2017139293A (ja) 2016-02-02 2016-02-02 ダイオード

Publications (2)

Publication Number Publication Date
JP2017139293A JP2017139293A (ja) 2017-08-10
JP2017139293A5 true JP2017139293A5 (enExample) 2018-05-17

Family

ID=58044102

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016018117A Pending JP2017139293A (ja) 2016-02-02 2016-02-02 ダイオード

Country Status (3)

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US (1) US20190035944A1 (enExample)
JP (1) JP2017139293A (enExample)
WO (1) WO2017134508A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6560141B2 (ja) * 2016-02-26 2019-08-14 トヨタ自動車株式会社 スイッチング素子
JP6560142B2 (ja) * 2016-02-26 2019-08-14 トヨタ自動車株式会社 スイッチング素子
JP6558385B2 (ja) 2017-02-23 2019-08-14 トヨタ自動車株式会社 半導体装置の製造方法
JP2018137394A (ja) * 2017-02-23 2018-08-30 トヨタ自動車株式会社 半導体装置の製造方法
CN110265486B (zh) * 2019-06-20 2023-03-24 中国电子科技集团公司第十三研究所 氧化镓sbd终端结构及制备方法
JP7730305B2 (ja) * 2022-07-15 2025-08-27 株式会社デンソー 半導体装置
WO2025158572A1 (ja) * 2024-01-24 2025-07-31 三菱電機株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113580A (en) * 1974-06-21 1976-02-03 Westinghouse Electric Corp Shotsutokiibarya daioodo
JPS554925A (en) * 1978-06-26 1980-01-14 Hitachi Ltd Shot key barrier diode
KR20130049919A (ko) * 2011-11-07 2013-05-15 현대자동차주식회사 실리콘카바이드 쇼트키 배리어 다이오드 소자 및 이의 제조 방법
JP2013102081A (ja) * 2011-11-09 2013-05-23 Tamura Seisakusho Co Ltd ショットキーバリアダイオード
US8741707B2 (en) * 2011-12-22 2014-06-03 Avogy, Inc. Method and system for fabricating edge termination structures in GaN materials
JP6269276B2 (ja) * 2014-04-11 2018-01-31 豊田合成株式会社 半導体装置、半導体装置の製造方法

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