JPS554925A - Shot key barrier diode - Google Patents

Shot key barrier diode

Info

Publication number
JPS554925A
JPS554925A JP7648378A JP7648378A JPS554925A JP S554925 A JPS554925 A JP S554925A JP 7648378 A JP7648378 A JP 7648378A JP 7648378 A JP7648378 A JP 7648378A JP S554925 A JPS554925 A JP S554925A
Authority
JP
Japan
Prior art keywords
layer
base plate
covered
high pressure
barrier metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7648378A
Other languages
Japanese (ja)
Inventor
Hiroshi Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7648378A priority Critical patent/JPS554925A/en
Publication of JPS554925A publication Critical patent/JPS554925A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To obtain high pressure resistance without deteriorating the direction of easy flow performance and increasing contact capacity by providing a relatively low resistance region on the center of a barrier metal and composing its surrounding area with a material of high resistance.
CONSTITUTION: An N layer is provided by pouring phosphorous ion by SiO2 mask 16A into an N-epi-layer 14 on an N+type silicon base plate 12, and then this is annealed so that the layer 18 is covered with a thin oxide film. And then, the film 16A which is surrounding the layer 18 at a distance is selectively removed and the layer 18 is covered with PSG 16B. At this time, the phosphrous layer 14 is dispersed and an N+layer 22 is formed. The N+layer 22 makes gettering of a source of contamination (or pollution) introduced during the process. By boring a hole 20 on films 16B and 16A, piling a barrier metal 24 of wolfram and also chromimum and argentum in layers to form an electrode, and forming a cathode on the side of the base plate 12, it is possible to obtain a high pressure-resistant shot key barrier diode free of conventional defect.
COPYRIGHT: (C)1980,JPO&Japio
JP7648378A 1978-06-26 1978-06-26 Shot key barrier diode Pending JPS554925A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7648378A JPS554925A (en) 1978-06-26 1978-06-26 Shot key barrier diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7648378A JPS554925A (en) 1978-06-26 1978-06-26 Shot key barrier diode

Publications (1)

Publication Number Publication Date
JPS554925A true JPS554925A (en) 1980-01-14

Family

ID=13606439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7648378A Pending JPS554925A (en) 1978-06-26 1978-06-26 Shot key barrier diode

Country Status (1)

Country Link
JP (1) JPS554925A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62269359A (en) * 1986-05-17 1987-11-21 Rohm Co Ltd Schottky diode
JPH01246868A (en) * 1988-03-28 1989-10-02 Sanken Electric Co Ltd Schottky barrier semiconductor device
JP2017139293A (en) * 2016-02-02 2017-08-10 トヨタ自動車株式会社 diode

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4837227A (en) * 1971-09-11 1973-06-01
JPS5120156A (en) * 1974-08-09 1976-02-18 Seiichi Akashi

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4837227A (en) * 1971-09-11 1973-06-01
JPS5120156A (en) * 1974-08-09 1976-02-18 Seiichi Akashi

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62269359A (en) * 1986-05-17 1987-11-21 Rohm Co Ltd Schottky diode
JPH01246868A (en) * 1988-03-28 1989-10-02 Sanken Electric Co Ltd Schottky barrier semiconductor device
JP2017139293A (en) * 2016-02-02 2017-08-10 トヨタ自動車株式会社 diode
WO2017134508A1 (en) * 2016-02-02 2017-08-10 Toyota Jidosha Kabushiki Kaisha Schottky diode

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