JP2019009308A5 - - Google Patents

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Publication number
JP2019009308A5
JP2019009308A5 JP2017124349A JP2017124349A JP2019009308A5 JP 2019009308 A5 JP2019009308 A5 JP 2019009308A5 JP 2017124349 A JP2017124349 A JP 2017124349A JP 2017124349 A JP2017124349 A JP 2017124349A JP 2019009308 A5 JP2019009308 A5 JP 2019009308A5
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JP
Japan
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gate
semiconductor layer
electrode
semiconductor
gan
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JP2017124349A
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English (en)
Japanese (ja)
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JP6769400B2 (ja
JP2019009308A (ja
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Priority to JP2017124349A priority Critical patent/JP6769400B2/ja
Priority claimed from JP2017124349A external-priority patent/JP6769400B2/ja
Priority to CN201880042217.5A priority patent/CN110785836B/zh
Priority to PCT/JP2018/020230 priority patent/WO2019003746A1/ja
Publication of JP2019009308A publication Critical patent/JP2019009308A/ja
Publication of JP2019009308A5 publication Critical patent/JP2019009308A5/ja
Priority to US16/693,598 priority patent/US11056584B2/en
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Publication of JP6769400B2 publication Critical patent/JP6769400B2/ja
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JP2017124349A 2017-06-26 2017-06-26 半導体装置 Active JP6769400B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017124349A JP6769400B2 (ja) 2017-06-26 2017-06-26 半導体装置
CN201880042217.5A CN110785836B (zh) 2017-06-26 2018-05-25 半导体装置
PCT/JP2018/020230 WO2019003746A1 (ja) 2017-06-26 2018-05-25 半導体装置
US16/693,598 US11056584B2 (en) 2017-06-26 2019-11-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017124349A JP6769400B2 (ja) 2017-06-26 2017-06-26 半導体装置

Publications (3)

Publication Number Publication Date
JP2019009308A JP2019009308A (ja) 2019-01-17
JP2019009308A5 true JP2019009308A5 (enExample) 2019-10-03
JP6769400B2 JP6769400B2 (ja) 2020-10-14

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JP2017124349A Active JP6769400B2 (ja) 2017-06-26 2017-06-26 半導体装置

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US (1) US11056584B2 (enExample)
JP (1) JP6769400B2 (enExample)
CN (1) CN110785836B (enExample)
WO (1) WO2019003746A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10529802B2 (en) * 2017-09-14 2020-01-07 Gan Systems Inc. Scalable circuit-under-pad device topologies for lateral GaN power transistors
JP7176475B2 (ja) * 2019-05-29 2022-11-22 株式会社デンソー 半導体装置
JP7586638B2 (ja) * 2019-12-03 2024-11-19 株式会社東芝 半導体装置
DE102020112069B4 (de) * 2020-02-27 2022-03-03 Taiwan Semiconductor Manufacturing Co. Ltd. Source-leckstromunterdrückung durch source-umgebende gate-struktur und verfahren zur herstellung der gate-struktur
US12183815B2 (en) * 2021-01-07 2024-12-31 Semiconductor Components Industries, Llc Non-linear HEMT devices
US11664431B2 (en) * 2021-01-08 2023-05-30 Taiwan Semiconductor Manufacturing Company, Ltd. Ring transistor structure
WO2022217435A1 (en) * 2021-04-12 2022-10-20 Innoscience (Suzhou) Technology Co., Ltd. Semiconductor device and method for manufacturing the same
CN113287200B (zh) * 2021-04-12 2022-07-08 英诺赛科(苏州)科技有限公司 半导体器件及其制造方法
CN116031284B (zh) * 2023-02-09 2023-06-16 长鑫存储技术有限公司 半导体结构及其形成方法
US20250080063A1 (en) * 2023-09-06 2025-03-06 Wolfspeed, Inc. Transistor with gate layout, device implementing the transistor with output pre-matching, and process of implementing the same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH088441A (ja) 1994-06-23 1996-01-12 Sony Corp デュアルゲート型電界効果トランジスタ
US7250642B2 (en) 2004-07-29 2007-07-31 Matsushita Electric Industrial Co., Ltd. Field-effect transistor
JP5590967B2 (ja) 2010-05-31 2014-09-17 富士通コンポーネント株式会社 高背型キースイッチ装置
US20120175679A1 (en) * 2011-01-10 2012-07-12 Fabio Alessio Marino Single structure cascode device
JP5712231B2 (ja) * 2011-02-15 2015-05-07 シャープ株式会社 半導体装置
JP2012238808A (ja) * 2011-05-13 2012-12-06 Sharp Corp 電界効果トランジスタ
JP2013055188A (ja) * 2011-09-02 2013-03-21 Sharp Corp 電界効果トランジスタ
US9748362B2 (en) * 2011-09-19 2017-08-29 Sensor Electronic Technology, Inc. High-voltage normally-off field effect transistor with channel having multiple adjacent sections
JP6014984B2 (ja) * 2011-09-29 2016-10-26 富士通株式会社 半導体装置及びその製造方法
US9147738B2 (en) * 2012-11-30 2015-09-29 Samsung Electronics Co., Ltd. High electron mobility transistor including plurality of gate electrodes
US9343562B2 (en) * 2013-12-06 2016-05-17 Infineon Technologies Americas Corp. Dual-gated group III-V merged transistor
JP2015173237A (ja) * 2014-03-12 2015-10-01 株式会社東芝 半導体装置
JP5669119B1 (ja) * 2014-04-18 2015-02-12 株式会社パウデック 半導体素子、電気機器、双方向電界効果トランジスタおよび実装構造体
US10290566B2 (en) * 2014-09-23 2019-05-14 Infineon Technologies Austria Ag Electronic component
CN107004605A (zh) * 2014-12-18 2017-08-01 夏普株式会社 场效应晶体管
JP6614116B2 (ja) * 2016-05-24 2019-12-04 株式会社デンソー 半導体装置

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