CN110785836B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN110785836B
CN110785836B CN201880042217.5A CN201880042217A CN110785836B CN 110785836 B CN110785836 B CN 110785836B CN 201880042217 A CN201880042217 A CN 201880042217A CN 110785836 B CN110785836 B CN 110785836B
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China
Prior art keywords
electrode
semiconductor layer
drain
gate
source
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CN201880042217.5A
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Chinese (zh)
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CN110785836A (zh
Inventor
畑谦佑
星真一
松木英夫
阴泳信
高桥茂树
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Denso Corp
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Denso Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN201880042217.5A 2017-06-26 2018-05-25 半导体装置 Active CN110785836B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017-124349 2017-06-26
JP2017124349A JP6769400B2 (ja) 2017-06-26 2017-06-26 半導体装置
PCT/JP2018/020230 WO2019003746A1 (ja) 2017-06-26 2018-05-25 半導体装置

Publications (2)

Publication Number Publication Date
CN110785836A CN110785836A (zh) 2020-02-11
CN110785836B true CN110785836B (zh) 2023-09-26

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CN201880042217.5A Active CN110785836B (zh) 2017-06-26 2018-05-25 半导体装置

Country Status (4)

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US (1) US11056584B2 (enExample)
JP (1) JP6769400B2 (enExample)
CN (1) CN110785836B (enExample)
WO (1) WO2019003746A1 (enExample)

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US10529802B2 (en) * 2017-09-14 2020-01-07 Gan Systems Inc. Scalable circuit-under-pad device topologies for lateral GaN power transistors
JP7176475B2 (ja) * 2019-05-29 2022-11-22 株式会社デンソー 半導体装置
JP7586638B2 (ja) * 2019-12-03 2024-11-19 株式会社東芝 半導体装置
DE102020112069B4 (de) * 2020-02-27 2022-03-03 Taiwan Semiconductor Manufacturing Co. Ltd. Source-leckstromunterdrückung durch source-umgebende gate-struktur und verfahren zur herstellung der gate-struktur
US12183815B2 (en) * 2021-01-07 2024-12-31 Semiconductor Components Industries, Llc Non-linear HEMT devices
US11664431B2 (en) * 2021-01-08 2023-05-30 Taiwan Semiconductor Manufacturing Company, Ltd. Ring transistor structure
WO2022217435A1 (en) * 2021-04-12 2022-10-20 Innoscience (Suzhou) Technology Co., Ltd. Semiconductor device and method for manufacturing the same
CN113287200B (zh) * 2021-04-12 2022-07-08 英诺赛科(苏州)科技有限公司 半导体器件及其制造方法
CN116031284B (zh) * 2023-02-09 2023-06-16 长鑫存储技术有限公司 半导体结构及其形成方法
US20250080063A1 (en) * 2023-09-06 2025-03-06 Wolfspeed, Inc. Transistor with gate layout, device implementing the transistor with output pre-matching, and process of implementing the same

Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2013074279A (ja) * 2011-09-29 2013-04-22 Fujitsu Ltd 半導体装置及びその製造方法
CN103370777A (zh) * 2011-02-15 2013-10-23 夏普株式会社 半导体装置
JP2015207610A (ja) * 2014-04-18 2015-11-19 株式会社パウデック 半導体素子、電気機器、双方向電界効果トランジスタおよび実装構造体
WO2016098391A1 (ja) * 2014-12-18 2016-06-23 シャープ株式会社 電界効果トランジスタ

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JPH088441A (ja) 1994-06-23 1996-01-12 Sony Corp デュアルゲート型電界効果トランジスタ
US7250642B2 (en) 2004-07-29 2007-07-31 Matsushita Electric Industrial Co., Ltd. Field-effect transistor
JP5590967B2 (ja) 2010-05-31 2014-09-17 富士通コンポーネント株式会社 高背型キースイッチ装置
US20120175679A1 (en) * 2011-01-10 2012-07-12 Fabio Alessio Marino Single structure cascode device
JP2012238808A (ja) * 2011-05-13 2012-12-06 Sharp Corp 電界効果トランジスタ
JP2013055188A (ja) * 2011-09-02 2013-03-21 Sharp Corp 電界効果トランジスタ
US9748362B2 (en) * 2011-09-19 2017-08-29 Sensor Electronic Technology, Inc. High-voltage normally-off field effect transistor with channel having multiple adjacent sections
US9147738B2 (en) * 2012-11-30 2015-09-29 Samsung Electronics Co., Ltd. High electron mobility transistor including plurality of gate electrodes
US9343562B2 (en) * 2013-12-06 2016-05-17 Infineon Technologies Americas Corp. Dual-gated group III-V merged transistor
JP2015173237A (ja) * 2014-03-12 2015-10-01 株式会社東芝 半導体装置
US10290566B2 (en) * 2014-09-23 2019-05-14 Infineon Technologies Austria Ag Electronic component
JP6614116B2 (ja) * 2016-05-24 2019-12-04 株式会社デンソー 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103370777A (zh) * 2011-02-15 2013-10-23 夏普株式会社 半导体装置
JP2013074279A (ja) * 2011-09-29 2013-04-22 Fujitsu Ltd 半導体装置及びその製造方法
JP2015207610A (ja) * 2014-04-18 2015-11-19 株式会社パウデック 半導体素子、電気機器、双方向電界効果トランジスタおよび実装構造体
WO2016098391A1 (ja) * 2014-12-18 2016-06-23 シャープ株式会社 電界効果トランジスタ

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JP6769400B2 (ja) 2020-10-14
JP2019009308A (ja) 2019-01-17
WO2019003746A1 (ja) 2019-01-03
CN110785836A (zh) 2020-02-11
US20200091332A1 (en) 2020-03-19
US11056584B2 (en) 2021-07-06

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