JP2011142190A5 - - Google Patents

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Publication number
JP2011142190A5
JP2011142190A5 JP2010001554A JP2010001554A JP2011142190A5 JP 2011142190 A5 JP2011142190 A5 JP 2011142190A5 JP 2010001554 A JP2010001554 A JP 2010001554A JP 2010001554 A JP2010001554 A JP 2010001554A JP 2011142190 A5 JP2011142190 A5 JP 2011142190A5
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JP
Japan
Prior art keywords
region
trench isolation
drain
semiconductor device
source
Prior art date
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Granted
Application number
JP2010001554A
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English (en)
Japanese (ja)
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JP2011142190A (ja
JP5511395B2 (ja
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Publication date
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Priority claimed from JP2010001554A external-priority patent/JP5511395B2/ja
Priority to JP2010001554A priority Critical patent/JP5511395B2/ja
Priority to TW099146313A priority patent/TW201138053A/zh
Priority to US12/984,148 priority patent/US20110163384A1/en
Priority to KR1020110000953A priority patent/KR20110081078A/ko
Priority to CN2011100023315A priority patent/CN102148226A/zh
Publication of JP2011142190A publication Critical patent/JP2011142190A/ja
Publication of JP2011142190A5 publication Critical patent/JP2011142190A5/ja
Publication of JP5511395B2 publication Critical patent/JP5511395B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010001554A 2010-01-06 2010-01-06 半導体装置 Active JP5511395B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010001554A JP5511395B2 (ja) 2010-01-06 2010-01-06 半導体装置
TW099146313A TW201138053A (en) 2010-01-06 2010-12-28 Semiconductor device
US12/984,148 US20110163384A1 (en) 2010-01-06 2011-01-04 Semiconductor device
KR1020110000953A KR20110081078A (ko) 2010-01-06 2011-01-05 반도체 장치
CN2011100023315A CN102148226A (zh) 2010-01-06 2011-01-06 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010001554A JP5511395B2 (ja) 2010-01-06 2010-01-06 半導体装置

Publications (3)

Publication Number Publication Date
JP2011142190A JP2011142190A (ja) 2011-07-21
JP2011142190A5 true JP2011142190A5 (enExample) 2012-12-27
JP5511395B2 JP5511395B2 (ja) 2014-06-04

Family

ID=44224206

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010001554A Active JP5511395B2 (ja) 2010-01-06 2010-01-06 半導体装置

Country Status (5)

Country Link
US (1) US20110163384A1 (enExample)
JP (1) JP5511395B2 (enExample)
KR (1) KR20110081078A (enExample)
CN (1) CN102148226A (enExample)
TW (1) TW201138053A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5546191B2 (ja) * 2009-09-25 2014-07-09 セイコーインスツル株式会社 半導体装置
JP2011071329A (ja) * 2009-09-25 2011-04-07 Seiko Instruments Inc 半導体装置
JP2013153019A (ja) * 2012-01-24 2013-08-08 Seiko Instruments Inc 半導体装置
JP2017092297A (ja) * 2015-11-12 2017-05-25 ソニー株式会社 電界効果トランジスタ、および半導体装置
WO2018190881A1 (en) * 2017-04-15 2018-10-18 Intel IP Corporation Multi-drain esd-robust transistor arrangements
JP7765268B2 (ja) * 2021-09-14 2025-11-06 キオクシア株式会社 半導体装置、保護回路、及び半導体装置の製造方法
US12336302B1 (en) * 2024-05-03 2025-06-17 Globalfoundries U.S. Inc. Vertical device triggered silicon control rectifier

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3564811B2 (ja) * 1995-07-24 2004-09-15 豊田合成株式会社 ３族窒化物半導体発光素子
KR100214855B1 (ko) * 1995-12-30 1999-08-02 김영환 정전기 방지용 트랜지스터 및 그의 제조방법
JPH1012746A (ja) * 1996-06-25 1998-01-16 Nec Corp 半導体装置
US6548874B1 (en) * 1999-10-27 2003-04-15 Texas Instruments Incorporated Higher voltage transistors for sub micron CMOS processes
US6310380B1 (en) * 2000-03-06 2001-10-30 Chartered Semiconductor Manufacturing, Inc. Electrostatic discharge protection transistor structure with a trench extending through the source or drain silicide layers
US7064399B2 (en) * 2000-09-15 2006-06-20 Texas Instruments Incorporated Advanced CMOS using super steep retrograde wells
TW522542B (en) * 2000-11-09 2003-03-01 United Microelectronics Corp Electrostatic discharge device structure
JP2002334990A (ja) * 2001-03-06 2002-11-22 Fuji Electric Co Ltd 半導体装置
KR100859486B1 (ko) * 2006-09-18 2008-09-24 동부일렉트로닉스 주식회사 고전압용 정전기 방전 보호 소자 및 그 제조 방법
KR100835282B1 (ko) * 2007-01-23 2008-06-05 삼성전자주식회사 정전기 방전 보호 장치
US7838940B2 (en) * 2007-12-04 2010-11-23 Infineon Technologies Ag Drain-extended field effect transistor

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