JP2011142190A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2011142190A JP2011142190A JP2010001554A JP2010001554A JP2011142190A JP 2011142190 A JP2011142190 A JP 2011142190A JP 2010001554 A JP2010001554 A JP 2010001554A JP 2010001554 A JP2010001554 A JP 2010001554A JP 2011142190 A JP2011142190 A JP 2011142190A
- Authority
- JP
- Japan
- Prior art keywords
- region
- drain
- mos transistor
- semiconductor device
- esd protection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 238000002955 isolation Methods 0.000 claims abstract description 21
- 239000012535 impurity Substances 0.000 claims abstract description 19
- 238000009792 diffusion process Methods 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
【解決手段】 ESD保護用のN型MOSトランジスタのドレイン領域は、トレンチ分離領域の側面および下面に設置されたドレイン領域と同一の導電型の不純物拡散領域によって形成されたドレイン延設領域を介して、ドレイン領域と同一の導電型の不純物拡散領域によって形成されたドレインコンタクト領域と電気的に接続している半導体装置とした。
【選択図】 図1
Description
201 ソース領域
202 ドレイン領域
203 ドレイン延設領域
204 ドレインコンタクト領域
301 素子分離領域
401 ゲート酸化膜
402 ゲート電極
601 ESD保護用のN型のMOSトランジスタ
701 コンタクトホール
Claims (6)
- ESD保護用のN型MOSトランジスタを有する、トレンチ分離領域を有する半導体装置において、前記ESD保護用のN型MOSトランジスタのドレイン領域は、前記トレンチ分離領域の側面および下面に設置された前記ドレイン領域と同一の導電型の不純物拡散領域によって形成されたドレイン延設領域を介して、前記ドレイン領域と同一の導電型の不純物拡散領域によって形成されたドレインコンタクト領域と電気的に接続している半導体装置。
- 前記トレンチ分離領域は複数並んで配置されており、前記ドレイン延設領域は、前記複数並んで配置されたトレンチ分離領域の側面および下面に設置された前記ドレイン領域と同一の導電型の不純物拡散領域を電気的に接続して構成されている請求項1記載の半導体装置。
- 前記ESD保護用のN型MOSトランジスタのソース領域は、前記トレンチ分離領域の側面および下面に設置された前記ソース領域と同一の導電型の不純物拡散領域によって形成されたソース延設領域を介して前記ソース領域と同一の導電型の不純物拡散領域によって形成されたソースコンタクト領域と電気的に接続している請求項1記載の半導体装置。
- 前記ドレイン延設領域のシート抵抗値は、前記ドレイン領域のシート抵抗値と同一である請求項1記載の半導体装置。
- 前記ESD保護用のN型MOSトランジスタは、DDD構造である請求項1記載の半導体装置。
- 前記ESD保護用のN型MOSトランジスタは、オフセットドレイン構造である請求項1記載の半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010001554A JP5511395B2 (ja) | 2010-01-06 | 2010-01-06 | 半導体装置 |
TW099146313A TW201138053A (en) | 2010-01-06 | 2010-12-28 | Semiconductor device |
US12/984,148 US20110163384A1 (en) | 2010-01-06 | 2011-01-04 | Semiconductor device |
KR1020110000953A KR20110081078A (ko) | 2010-01-06 | 2011-01-05 | 반도체 장치 |
CN2011100023315A CN102148226A (zh) | 2010-01-06 | 2011-01-06 | 半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010001554A JP5511395B2 (ja) | 2010-01-06 | 2010-01-06 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011142190A true JP2011142190A (ja) | 2011-07-21 |
JP2011142190A5 JP2011142190A5 (ja) | 2012-12-27 |
JP5511395B2 JP5511395B2 (ja) | 2014-06-04 |
Family
ID=44224206
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010001554A Active JP5511395B2 (ja) | 2010-01-06 | 2010-01-06 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20110163384A1 (ja) |
JP (1) | JP5511395B2 (ja) |
KR (1) | KR20110081078A (ja) |
CN (1) | CN102148226A (ja) |
TW (1) | TW201138053A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110073948A1 (en) * | 2009-09-25 | 2011-03-31 | Hiroaki Takasu | Semiconductor device |
WO2018190881A1 (en) * | 2017-04-15 | 2018-10-18 | Intel IP Corporation | Multi-drain esd-robust transistor arrangements |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5546191B2 (ja) * | 2009-09-25 | 2014-07-09 | セイコーインスツル株式会社 | 半導体装置 |
JP2013153019A (ja) * | 2012-01-24 | 2013-08-08 | Seiko Instruments Inc | 半導体装置 |
JP2017092297A (ja) * | 2015-11-12 | 2017-05-25 | ソニー株式会社 | 電界効果トランジスタ、および半導体装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1012746A (ja) * | 1996-06-25 | 1998-01-16 | Nec Corp | 半導体装置 |
JPH1022461A (ja) * | 1995-12-30 | 1998-01-23 | Hyundai Electron Ind Co Ltd | 静電気放電保護用トランジスターおよびその製造方法 |
JP2001168210A (ja) * | 1999-10-27 | 2001-06-22 | Texas Instr Inc <Ti> | 集積回路用ドレイン拡張型トランジスタ |
JP2001284583A (ja) * | 2000-03-06 | 2001-10-12 | Chartered Semiconductor Manufacturing Inc | 静電放電防止トランジスタ |
JP2002334990A (ja) * | 2001-03-06 | 2002-11-22 | Fuji Electric Co Ltd | 半導体装置 |
JP2008078654A (ja) * | 2006-09-18 | 2008-04-03 | Dongbu Hitek Co Ltd | 半導体素子及びその製造方法 |
JP2008182239A (ja) * | 2007-01-23 | 2008-08-07 | Samsung Electronics Co Ltd | 静電気放電保護装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3564811B2 (ja) * | 1995-07-24 | 2004-09-15 | 豊田合成株式会社 | 3族窒化物半導体発光素子 |
US7064399B2 (en) * | 2000-09-15 | 2006-06-20 | Texas Instruments Incorporated | Advanced CMOS using super steep retrograde wells |
TW522542B (en) * | 2000-11-09 | 2003-03-01 | United Microelectronics Corp | Electrostatic discharge device structure |
US7838940B2 (en) * | 2007-12-04 | 2010-11-23 | Infineon Technologies Ag | Drain-extended field effect transistor |
-
2010
- 2010-01-06 JP JP2010001554A patent/JP5511395B2/ja active Active
- 2010-12-28 TW TW099146313A patent/TW201138053A/zh unknown
-
2011
- 2011-01-04 US US12/984,148 patent/US20110163384A1/en not_active Abandoned
- 2011-01-05 KR KR1020110000953A patent/KR20110081078A/ko not_active Application Discontinuation
- 2011-01-06 CN CN2011100023315A patent/CN102148226A/zh active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1022461A (ja) * | 1995-12-30 | 1998-01-23 | Hyundai Electron Ind Co Ltd | 静電気放電保護用トランジスターおよびその製造方法 |
JPH1012746A (ja) * | 1996-06-25 | 1998-01-16 | Nec Corp | 半導体装置 |
JP2001168210A (ja) * | 1999-10-27 | 2001-06-22 | Texas Instr Inc <Ti> | 集積回路用ドレイン拡張型トランジスタ |
JP2001284583A (ja) * | 2000-03-06 | 2001-10-12 | Chartered Semiconductor Manufacturing Inc | 静電放電防止トランジスタ |
JP2002334990A (ja) * | 2001-03-06 | 2002-11-22 | Fuji Electric Co Ltd | 半導体装置 |
JP2008078654A (ja) * | 2006-09-18 | 2008-04-03 | Dongbu Hitek Co Ltd | 半導体素子及びその製造方法 |
JP2008182239A (ja) * | 2007-01-23 | 2008-08-07 | Samsung Electronics Co Ltd | 静電気放電保護装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110073948A1 (en) * | 2009-09-25 | 2011-03-31 | Hiroaki Takasu | Semiconductor device |
US8278714B2 (en) * | 2009-09-25 | 2012-10-02 | Seiko Instruments Inc. | Semiconductor device |
WO2018190881A1 (en) * | 2017-04-15 | 2018-10-18 | Intel IP Corporation | Multi-drain esd-robust transistor arrangements |
Also Published As
Publication number | Publication date |
---|---|
KR20110081078A (ko) | 2011-07-13 |
JP5511395B2 (ja) | 2014-06-04 |
TW201138053A (en) | 2011-11-01 |
US20110163384A1 (en) | 2011-07-07 |
CN102148226A (zh) | 2011-08-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5226260B2 (ja) | 半導体装置 | |
US7750409B2 (en) | Semiconductor device | |
JP5546191B2 (ja) | 半導体装置 | |
JP5511395B2 (ja) | 半導体装置 | |
JP2013153019A (ja) | 半導体装置 | |
TWI450380B (zh) | 半導體裝置 | |
JP5270876B2 (ja) | 半導体装置 | |
KR101489003B1 (ko) | 반도체 장치 | |
JP2007019413A (ja) | 保護回路用半導体装置 | |
JP2011071329A (ja) | 半導体装置 | |
JP5498822B2 (ja) | 半導体装置 | |
JP2007242965A (ja) | 半導体装置 | |
JP5511353B2 (ja) | 半導体装置 | |
JP2013153018A (ja) | 半導体装置 | |
JP2011192842A (ja) | 半導体装置 | |
JP2011142189A (ja) | 半導体装置 | |
KR100244294B1 (ko) | 이에스디(esd) 보호회로 | |
JP2011210896A (ja) | 半導体装置 | |
JP2011071328A (ja) | 半導体装置 | |
JP2011071325A (ja) | 半導体装置 | |
JP4006023B2 (ja) | 集積回路 | |
TWI536534B (zh) | 靜電放電防護元件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121109 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20121109 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131119 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20131121 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140116 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140304 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140325 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5511395 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |