JP2016506081A5 - - Google Patents

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JP2016506081A5
JP2016506081A5 JP2015550412A JP2015550412A JP2016506081A5 JP 2016506081 A5 JP2016506081 A5 JP 2016506081A5 JP 2015550412 A JP2015550412 A JP 2015550412A JP 2015550412 A JP2015550412 A JP 2015550412A JP 2016506081 A5 JP2016506081 A5 JP 2016506081A5
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Japan
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region
transistor device
jfet
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microns
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JP2015550412A
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JP6475635B2 (ja
JP2016506081A (ja
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Priority claimed from US13/730,133 external-priority patent/US9530844B2/en
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JP2015550412A 2012-12-28 2013-12-04 ゲート酸化膜層において電界を低下させた半導体デバイス Active JP6475635B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/730,133 2012-12-28
US13/730,133 US9530844B2 (en) 2012-12-28 2012-12-28 Transistor structures having reduced electrical field at the gate oxide and methods for making same
PCT/US2013/073093 WO2014105372A1 (en) 2012-12-28 2013-12-04 Semiconductor devices having reduced electric field at a gate oxide layer

Publications (3)

Publication Number Publication Date
JP2016506081A JP2016506081A (ja) 2016-02-25
JP2016506081A5 true JP2016506081A5 (enExample) 2017-01-26
JP6475635B2 JP6475635B2 (ja) 2019-02-27

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JP2015550412A Active JP6475635B2 (ja) 2012-12-28 2013-12-04 ゲート酸化膜層において電界を低下させた半導体デバイス

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US (2) US9530844B2 (enExample)
EP (2) EP2939271B1 (enExample)
JP (1) JP6475635B2 (enExample)
KR (1) KR101735230B1 (enExample)
CN (1) CN105103297B (enExample)
WO (1) WO2014105372A1 (enExample)

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CN113838936B (zh) 2020-06-23 2025-10-17 意法半导体股份有限公司 具有改善短路性能的4H-SiC电子器件及其制造方法
KR102777182B1 (ko) * 2020-07-24 2025-03-10 울프스피드, 인크. 견고성이 향상된 수직형 sic 반도체 디바이스
CN111933710B (zh) * 2020-08-03 2023-04-07 株洲中车时代半导体有限公司 碳化硅器件的元胞结构、其制备方法及碳化硅器件
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US11830943B2 (en) 2021-07-26 2023-11-28 Analog Power Conversion LLC RF SiC MOSFET with recessed gate dielectric
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CN114023809B (zh) * 2021-11-10 2025-03-21 飞锃半导体（上海）有限公司 半导体结构及其形成方法
CN114464671B (zh) * 2022-04-11 2022-07-01 江苏长晶浦联功率半导体有限公司 一种改善栅电容特性的超结mosfet
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