JP2016528729A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2016528729A5 JP2016528729A5 JP2016527010A JP2016527010A JP2016528729A5 JP 2016528729 A5 JP2016528729 A5 JP 2016528729A5 JP 2016527010 A JP2016527010 A JP 2016527010A JP 2016527010 A JP2016527010 A JP 2016527010A JP 2016528729 A5 JP2016528729 A5 JP 2016528729A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- trench
- field effect
- effect device
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 claims 20
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims 11
- 238000000034 method Methods 0.000 claims 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 6
- 238000000137 annealing Methods 0.000 claims 4
- 229910052757 nitrogen Inorganic materials 0.000 claims 4
- 238000002161 passivation Methods 0.000 claims 4
- 235000012239 silicon dioxide Nutrition 0.000 claims 4
- 239000000377 silicon dioxide Substances 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 239000007800 oxidant agent Substances 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000005019 vapor deposition process Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/944,473 US9570570B2 (en) | 2013-07-17 | 2013-07-17 | Enhanced gate dielectric for a field effect device with a trenched gate |
| US13/944,473 | 2013-07-17 | ||
| PCT/US2014/046505 WO2015050615A2 (en) | 2013-07-17 | 2014-07-14 | Enhanced gate dielectric for a field effect device with a trenched gate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016528729A JP2016528729A (ja) | 2016-09-15 |
| JP2016528729A5 true JP2016528729A5 (enExample) | 2017-06-08 |
Family
ID=52342857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016527010A Pending JP2016528729A (ja) | 2013-07-17 | 2014-07-14 | トレンチゲートを有する電界効果デバイスのための強化されたゲート誘電体 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9570570B2 (enExample) |
| EP (2) | EP3022772B1 (enExample) |
| JP (1) | JP2016528729A (enExample) |
| WO (1) | WO2015050615A2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016164906A (ja) * | 2015-03-06 | 2016-09-08 | 豊田合成株式会社 | 半導体装置およびその製造方法ならびに電力変換装置 |
| US9991379B1 (en) | 2016-11-17 | 2018-06-05 | Sanken Electric Co., Ltd. | Semiconductor device with a gate insulating film formed on an inner wall of a trench, and method of manufacturing the same |
| DE102016015475B3 (de) * | 2016-12-28 | 2018-01-11 | 3-5 Power Electronics GmbH | IGBT Halbleiterstruktur |
| US11355630B2 (en) * | 2020-09-11 | 2022-06-07 | Wolfspeed, Inc. | Trench bottom shielding methods and approaches for trenched semiconductor device structures |
| US11640990B2 (en) * | 2020-10-27 | 2023-05-02 | Wolfspeed, Inc. | Power semiconductor devices including a trenched gate and methods of forming such devices |
| JP7697286B2 (ja) * | 2021-06-21 | 2025-06-24 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
| JP7697313B2 (ja) * | 2021-08-17 | 2025-06-24 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3123061B2 (ja) * | 1990-06-13 | 2001-01-09 | ソニー株式会社 | バイアスｅｃｒ―ｃｖｄ法による埋め込み平坦化方法 |
| US5382541A (en) * | 1992-08-26 | 1995-01-17 | Harris Corporation | Method for forming recessed oxide isolation containing deep and shallow trenches |
| US6573534B1 (en) * | 1995-09-06 | 2003-06-03 | Denso Corporation | Silicon carbide semiconductor device |
| JP3419163B2 (ja) * | 1995-09-06 | 2003-06-23 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
| JP5116910B2 (ja) * | 1999-02-23 | 2013-01-09 | パナソニック株式会社 | 絶縁ゲート型半導体素子の製造方法 |
| US6291298B1 (en) * | 1999-05-25 | 2001-09-18 | Advanced Analogic Technologies, Inc. | Process of manufacturing Trench gate semiconductor device having gate oxide layer with multiple thicknesses |
| US6696726B1 (en) * | 2000-08-16 | 2004-02-24 | Fairchild Semiconductor Corporation | Vertical MOSFET with ultra-low resistance and low gate charge |
| US7074643B2 (en) | 2003-04-24 | 2006-07-11 | Cree, Inc. | Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same |
| GB0312512D0 (en) * | 2003-05-31 | 2003-07-09 | Koninkl Philips Electronics Nv | Termination structures for semiconductor devices and the manufacture thereof |
| JP5017823B2 (ja) * | 2005-09-12 | 2012-09-05 | 富士電機株式会社 | 半導体素子の製造方法 |
| CA2636776A1 (en) | 2006-01-30 | 2007-08-02 | Sumitomo Electric Industries, Ltd. | Method of manufacturing silicon carbide semiconductor device |
| JP2008011406A (ja) | 2006-06-30 | 2008-01-17 | Toshiba Corp | 受信装置および送信装置 |
| JP2008311406A (ja) * | 2007-06-14 | 2008-12-25 | Toyota Motor Corp | 溝ゲート型ＳｉＣ半導体装置の製造方法 |
| US20090142899A1 (en) * | 2007-12-04 | 2009-06-04 | Jensen Jacob M | Interfacial layer for hafnium-based high-k/metal gate transistors |
| WO2010103820A1 (ja) * | 2009-03-11 | 2010-09-16 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
| JP5721351B2 (ja) * | 2009-07-21 | 2015-05-20 | ローム株式会社 | 半導体装置 |
| US9012335B2 (en) | 2010-03-12 | 2015-04-21 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device and method for manufacturing the same |
| JP2012209422A (ja) * | 2011-03-30 | 2012-10-25 | Sumitomo Electric Ind Ltd | Ｉｇｂｔ |
| JP6037499B2 (ja) * | 2011-06-08 | 2016-12-07 | ローム株式会社 | 半導体装置およびその製造方法 |
| JP5751113B2 (ja) * | 2011-09-28 | 2015-07-22 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
| JP5834801B2 (ja) | 2011-11-16 | 2015-12-24 | 住友電気工業株式会社 | 半導体装置の製造方法および半導体装置 |
| JP5763514B2 (ja) | 2011-12-13 | 2015-08-12 | トヨタ自動車株式会社 | スイッチング素子の製造方法 |
-
2013
- 2013-07-17 US US13/944,473 patent/US9570570B2/en active Active
-
2014
- 2014-07-14 JP JP2016527010A patent/JP2016528729A/ja active Pending
- 2014-07-14 WO PCT/US2014/046505 patent/WO2015050615A2/en not_active Ceased
- 2014-07-14 EP EP14830427.2A patent/EP3022772B1/en active Active
- 2014-07-14 EP EP20213192.6A patent/EP3826073A1/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2016528729A5 (enExample) | ||
| US9337283B2 (en) | Semiconductor device with field plate | |
| US20240429273A1 (en) | Charge-balance power device, and process for manufacturing the charge-balance power device | |
| CN105448990B (zh) | Ldmos晶体管及其形成方法 | |
| JP2016506081A5 (enExample) | ||
| EP2824711A3 (en) | Vertical transistors having p-type gallium nitride current barrier layers and methods of fabricating the same | |
| JP5996671B2 (ja) | 炭化珪素半導体装置及びその製造方法 | |
| JP2017017320A5 (enExample) | ||
| US20130168760A1 (en) | Trench mosfet with resurf stepped oxide and diffused drift region | |
| US9373544B2 (en) | Semiconductor arrangement and formation thereof | |
| JP2012160716A5 (enExample) | ||
| JP2017076785A5 (enExample) | ||
| JP2014143419A5 (enExample) | ||
| US20160043199A1 (en) | Method of manufacturing semiconductor device | |
| US9947750B2 (en) | Silicon carbide semiconductor switching device and method of manufacturing silicon carbide semiconductor switching device | |
| JP5579216B2 (ja) | 半導体装置及びその製造方法 | |
| JP2013243343A5 (enExample) | ||
| TW201607032A (zh) | 半導體裝置 | |
| WO2011160591A1 (zh) | Vdmos器件及其制作方法 | |
| JP2015164185A5 (enExample) | ||
| JP5236787B2 (ja) | 窒化物半導体装置およびその製造方法 | |
| JP5750382B2 (ja) | 窒化物半導体装置 | |
| JP2016139676A (ja) | 半導体装置と、その製造方法 | |
| JP2009117821A5 (enExample) | ||
| JP6438247B2 (ja) | 横型半導体装置 |