JP2016528729A - トレンチゲートを有する電界効果デバイスのための強化されたゲート誘電体 - Google Patents

トレンチゲートを有する電界効果デバイスのための強化されたゲート誘電体 Download PDF

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JP2016528729A
JP2016528729A JP2016527010A JP2016527010A JP2016528729A JP 2016528729 A JP2016528729 A JP 2016528729A JP 2016527010 A JP2016527010 A JP 2016527010A JP 2016527010 A JP2016527010 A JP 2016527010A JP 2016528729 A JP2016528729 A JP 2016528729A
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dielectric layer
trench
field effect
effect device
thickness
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JP2016527010A
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JP2016528729A5 (enExample
Inventor
ダニエル ジェナー リヒテンウォルナー
ダニエル ジェナー リヒテンウォルナー
リン チェン
リン チェン
アナント クマール アガーワル
アナント クマール アガーワル
ジョン ウィリアムス パーマー
ジョン ウィリアムス パーマー
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Wolfspeed Inc
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Cree Inc
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Publication of JP2016528729A5 publication Critical patent/JP2016528729A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01366—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the semiconductor being silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials

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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2016527010A 2013-07-17 2014-07-14 トレンチゲートを有する電界効果デバイスのための強化されたゲート誘電体 Pending JP2016528729A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/944,473 2013-07-17
US13/944,473 US9570570B2 (en) 2013-07-17 2013-07-17 Enhanced gate dielectric for a field effect device with a trenched gate
PCT/US2014/046505 WO2015050615A2 (en) 2013-07-17 2014-07-14 Enhanced gate dielectric for a field effect device with a trenched gate

Publications (2)

Publication Number Publication Date
JP2016528729A true JP2016528729A (ja) 2016-09-15
JP2016528729A5 JP2016528729A5 (enExample) 2017-06-08

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JP2016527010A Pending JP2016528729A (ja) 2013-07-17 2014-07-14 トレンチゲートを有する電界効果デバイスのための強化されたゲート誘電体

Country Status (4)

Country Link
US (1) US9570570B2 (enExample)
EP (2) EP3022772B1 (enExample)
JP (1) JP2016528729A (enExample)
WO (1) WO2015050615A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021005740A (ja) * 2016-12-28 2021-01-14 ３−５ パワー エレクトロニクス ゲゼルシャフト ミット ベシュレンクテル ハフツング３−５ Ｐｏｗｅｒ Ｅｌｅｃｔｒｏｎｉｃｓ ＧｍｂＨ Ｉｇｂｔ半導体構造

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JP2016164906A (ja) * 2015-03-06 2016-09-08 豊田合成株式会社 半導体装置およびその製造方法ならびに電力変換装置
US9991379B1 (en) 2016-11-17 2018-06-05 Sanken Electric Co., Ltd. Semiconductor device with a gate insulating film formed on an inner wall of a trench, and method of manufacturing the same
US12641822B2 (en) 2020-06-19 2026-05-26 Wolfspeed, Inc. Power devices with a hybrid gate structure
US11355630B2 (en) * 2020-09-11 2022-06-07 Wolfspeed, Inc. Trench bottom shielding methods and approaches for trenched semiconductor device structures
US11640990B2 (en) 2020-10-27 2023-05-02 Wolfspeed, Inc. Power semiconductor devices including a trenched gate and methods of forming such devices
JP7697286B2 (ja) * 2021-06-21 2025-06-24 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP7697313B2 (ja) * 2021-08-17 2025-06-24 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
US20260231468A1 (en) 2025-01-31 2026-08-06 Wolfspeed, Inc. Power semiconductor devices having high dielectric constant gate dielectric layers and thinned shielding patterns

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JPH0445533A (ja) * 1990-06-13 1992-02-14 Sony Corp バイアスｅｃｒ―ｃｖｄ法による埋め込み平坦化方法
JPH0974191A (ja) * 1995-09-06 1997-03-18 Denso Corp 炭化珪素半導体装置の製造方法
JP2000312003A (ja) * 1999-02-23 2000-11-07 Matsushita Electric Ind Co Ltd 絶縁ゲート型半導体素子およびその製造方法
JP2003509836A (ja) * 1999-05-25 2003-03-11 ウィリアムス、リチャード・ケイ 複数の厚さを有するゲート酸化物層を備えたトレンチ半導体素子及びそれを製造する方法
JP2007080971A (ja) * 2005-09-12 2007-03-29 Fuji Electric Holdings Co Ltd 半導体素子およびその製造方法
WO2010103820A1 (ja) * 2009-03-11 2010-09-16 三菱電機株式会社 炭化珪素半導体装置の製造方法
WO2011111627A1 (ja) * 2010-03-12 2011-09-15 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2012209422A (ja) * 2011-03-30 2012-10-25 Sumitomo Electric Ind Ltd Ｉｇｂｔ
JP2013125763A (ja) * 2011-12-13 2013-06-24 Toyota Motor Corp スイッチング素子とその製造方法

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US6696726B1 (en) * 2000-08-16 2004-02-24 Fairchild Semiconductor Corporation Vertical MOSFET with ultra-low resistance and low gate charge
US7074643B2 (en) 2003-04-24 2006-07-11 Cree, Inc. Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
GB0312512D0 (en) * 2003-05-31 2003-07-09 Koninkl Philips Electronics Nv Termination structures for semiconductor devices and the manufacture thereof
US20100221917A1 (en) 2006-01-30 2010-09-02 Sumitomo Electric Industries, Ltd. Method of manufacturing silicon carbide semiconductor device
JP2008011406A (ja) 2006-06-30 2008-01-17 Toshiba Corp 受信装置および送信装置
JP2008311406A (ja) * 2007-06-14 2008-12-25 Toyota Motor Corp 溝ゲート型ＳｉＣ半導体装置の製造方法
US20090142899A1 (en) * 2007-12-04 2009-06-04 Jensen Jacob M Interfacial layer for hafnium-based high-k/metal gate transistors
JP5721351B2 (ja) 2009-07-21 2015-05-20 ローム株式会社 半導体装置
JP6037499B2 (ja) * 2011-06-08 2016-12-07 ローム株式会社 半導体装置およびその製造方法
JP5751113B2 (ja) * 2011-09-28 2015-07-22 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP5834801B2 (ja) 2011-11-16 2015-12-24 住友電気工業株式会社 半導体装置の製造方法および半導体装置

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Publication number Priority date Publication date Assignee Title
JPH0445533A (ja) * 1990-06-13 1992-02-14 Sony Corp バイアスｅｃｒ―ｃｖｄ法による埋め込み平坦化方法
JPH0974191A (ja) * 1995-09-06 1997-03-18 Denso Corp 炭化珪素半導体装置の製造方法
JP2000312003A (ja) * 1999-02-23 2000-11-07 Matsushita Electric Ind Co Ltd 絶縁ゲート型半導体素子およびその製造方法
JP2003509836A (ja) * 1999-05-25 2003-03-11 ウィリアムス、リチャード・ケイ 複数の厚さを有するゲート酸化物層を備えたトレンチ半導体素子及びそれを製造する方法
JP2007080971A (ja) * 2005-09-12 2007-03-29 Fuji Electric Holdings Co Ltd 半導体素子およびその製造方法
WO2010103820A1 (ja) * 2009-03-11 2010-09-16 三菱電機株式会社 炭化珪素半導体装置の製造方法
WO2011111627A1 (ja) * 2010-03-12 2011-09-15 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2012209422A (ja) * 2011-03-30 2012-10-25 Sumitomo Electric Ind Ltd Ｉｇｂｔ
JP2013125763A (ja) * 2011-12-13 2013-06-24 Toyota Motor Corp スイッチング素子とその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021005740A (ja) * 2016-12-28 2021-01-14 ３−５ パワー エレクトロニクス ゲゼルシャフト ミット ベシュレンクテル ハフツング３−５ Ｐｏｗｅｒ Ｅｌｅｃｔｒｏｎｉｃｓ ＧｍｂＨ Ｉｇｂｔ半導体構造
JP7283768B2 (ja) 2016-12-28 2023-05-30 ３－５ パワー エレクトロニクス ゲゼルシャフト ミット ベシュレンクテル ハフツング Ｉｇｂｔ半導体構造

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Publication number Publication date
EP3826073A1 (en) 2021-05-26
US20150021623A1 (en) 2015-01-22
WO2015050615A3 (en) 2015-05-28
US9570570B2 (en) 2017-02-14
WO2015050615A2 (en) 2015-04-09
EP3022772B1 (en) 2021-02-17
EP3022772A2 (en) 2016-05-25

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