CN116092928B - 一种高栅压摆幅的增强型GaN功率器件及其制备方法 - Google Patents
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Abstract
本发明提供了一种高栅压摆幅的增强型GaN功率器件及其制备方法,属于半导体技术领域。本发明在P‑GaN层生长结束后,继续生长一层AlGaN‑2层,在AlGaN‑2层生长过程中进行Mg掺杂,形成P型半导体,并使Al组分为渐变的,以减小AlGaN‑2层与P‑GaN层之间的应力,减弱压电极化效应。P型半导体与金属接触时,金属的功函数相对于半导体的功函数越小,形成的肖特基接触势垒就越高。本发明利用AlGaN‑2层功函数比P‑GaN大的特点,其与栅极上方的金属形成的肖特基接触,势垒更高,从而导致栅极耐压会更强,提升了器件的栅压摆幅。
Description
技术领域
本发明涉及半导体技术领域,尤其涉及一种高栅压摆幅的增强型GaN功率器件及其制备方法。
背景技术
GaN材料具有禁带宽度大、击穿场强高、极化系数高、电子迁移率高、电子饱和速率大等特点,是制备新一代高性能电子电力器件的新型材料。GaN基功率器件,由于AlGaN/GaN异质结的极化特性,在AlGaN/GaN界面处存在自发极化和压电极化效应,在界面处GaN一侧形成三角势阱,电子束缚在势阱中,只能在AlGaN/GaN界面的薄层中运动,即形成二维电子气,通过控制栅极电压调控栅下方的二维电子气浓度,可以实现对沟道通断的控制。增强型功率器件,在零偏置的状态下是关断的,即在非工作状态下不需要负压电源的驱动,这一方面可以很大程度降低电路的额外功率损耗,另一方面增强型的功率器件还可以简化电路设计。现阶段,GaN基增强型功率器件的商业化实现手段是采用P-GaN结构,即利用P-GaN对栅极下方二维电子气的耗尽,从而实现增强型器件。在栅极的制作过程中,通常在P-GaN上方沉积一层金属,使金属和P-GaN形成肖特基接触,以减小栅极的漏电。在形成肖特基接触时,金属的功函数相对于P-GaN的功函数越小,形成的势垒就越高,栅漏电就越小,栅压摆幅(栅压摆幅是指在栅极可加电压的范围)也就越大。目前的GaN增强功率器件,栅压摆幅为-10V~7V,范围较小。提升器件的栅压摆幅对于系统设计会更加灵活,并且在系统应用中,高的栅压摆幅,对高dv/dt开关条件下的栅压振荡或过冲,具有更强的抵抗能力,可靠性表现更好。
发明内容
本发明的目的在于提供一种高栅压摆幅的增强型GaN功率器件及其制备方法,本发明提供的增强型GaN功率器件具有高的栅压摆幅。
为了实现上述发明目的,本发明提供以下技术方案:
本发明提供了一种高栅压摆幅的增强型GaN功率器件的制备方法,包括以下步骤:
在衬底上依次外延生长缓冲层、AlGaN-1层、P-GaN层和AlGaN-2层;所述AlGaN-2层在生长过程中掺入Mg元素;所述AlGaN-2层开始生长时Al组分的摩尔百分比为0%,生长结束时Al组分的摩尔百分比为10~30%;所述AlGaN-2层中Al组分的摩尔百分比连续渐变;
将栅极以外区域的AlGaN-2层及P-GaN层刻蚀掉,退火,得到中间晶片;所述退火的温度在800℃以上,保温时间在2min以上;
在所述中间晶片表面生长SiN薄膜作为保护层,然后在源极区域和漏极区域刻蚀出凹槽,形成源极凹槽和漏极凹槽;
在所述源极凹槽和漏极凹槽沉积金属,形成欧姆接触;
刻蚀掉栅极区域的保护层,在栅极区域沉积金属,形成肖特基接触,得到高栅压摆幅的增强型GaN功率器件。
优选的,所述AlGaN-2层的厚度为0.1~100nm。
优选的,所述AlGaN-2层的厚度为10~80nm。
优选的,所述AlGaN-2层中Mg元素的掺杂浓度为5×1018/cm3~5×1019/cm3。
优选的,所述缓冲层为GaN层或AlGaN层。
优选的,所述P-GaN层的厚度>50nm。
优选的,所述AlGaN-1层中Al组分的摩尔百分含量为15~25%,Al组分呈均匀分布。
优选的,所述AlGaN-1层的厚度为5~25nm。
优选的,所述退火在氮气氛围下进行。
本发明提供了上述方案所述制备方法制备得到的高栅压摆幅的增强型GaN功率器件。
本发明提供了一种高栅压摆幅的增强型GaN功率器件的制备方法,包括以下步骤:在衬底上依次外延生长缓冲层(Buffer层)、AlGaN-1层、P-GaN层和AlGaN-2层;所述AlGaN-2层在生长过程中掺入Mg元素;所述AlGaN-2层开始生长时Al组分的摩尔百分比为0%,生长结束时Al组分的摩尔百分比为10~30%;所述AlGaN-2层中Al组分的摩尔百分比连续渐变;将栅极以外区域的AlGaN-2层及P-GaN层刻蚀掉,退火,得到中间晶片;所述退火的温度在800℃以上,保温时间在2min以上;在所述中间晶片表面生长SiN薄膜作为保护层,然后在源极区域和漏极区域刻蚀出凹槽,形成源极凹槽和漏极凹槽;在所述源极凹槽和漏极凹槽沉积金属,形成欧姆接触;刻蚀掉栅极区域的保护层,在栅极区域沉积金属,形成肖特基接触,得到高栅压摆幅的增强型GaN功率器件。
本发明在P-GaN层生长结束后,继续生长一层AlGaN-2层,在AlGaN-2层生长过程中进行Mg掺杂,形成P型半导体,并使Al组分为渐变的,以减小AlGaN-2层与P-GaN层之间的应力,减弱压电极化效应。P型半导体与金属接触时,金属的功函数相对于半导体的功函数越小,形成的肖特基接触势垒就越高。本发明利用AlGaN-2层功函数比P-GaN大的特点,其与栅极上方的金属形成的肖特基接触,势垒更高,从而导致栅极耐压会更强,提升了器件的栅压摆幅。
由于P-GaN层生长完成后,接着生长了AlGaN-2层,生长AlGaN-2层的过程中,P-GaN会被钝化,导致P-GaN层中空穴浓度非常低,起不到耗尽作用,本发明利用退火将P-GaN层激活,提升P-GaN层中的空穴浓度,对栅极下方的二维电子气起到耗尽作用,其他区域的二维电子气仍然存在。
附图说明
图1为本发明在衬底上依次外延生长缓冲层、AlGaN-1层、P-GaN层和AlGaN-2层后的结构示意图;
图2为中间晶片的结构示意图;
图3为在中间晶片表面生长SiN薄膜并刻蚀出源极凹槽和漏极凹槽的结构示意图;
图4为本发明高栅压摆幅的增强型GaN功率器件的结构示意图。
具体实施方式
本发明提供了一种高栅压摆幅的增强型GaN功率器件的制备方法,包括以下步骤:
在衬底上依次外延生长缓冲层、AlGaN-1层、P-GaN层和AlGaN-2层;所述AlGaN-2层在生长过程中掺入Mg元素;所述AlGaN-2层开始生长时Al组分的摩尔百分比为0%,生长结束时Al组分的摩尔百分比为10~30%;所述AlGaN-2层中Al组分的摩尔百分比连续渐变;
将栅极以外区域的AlGaN-2层及P-GaN层刻蚀掉,退火,得到中间晶片;所述退火的温度在800℃以上,保温时间在2min以上;
在所述中间晶片表面生长SiN薄膜作为保护层,然后在源极区域和漏极区域刻蚀出凹槽,形成源极凹槽和漏极凹槽;
在所述源极凹槽和漏极凹槽沉积金属,形成欧姆接触;
刻蚀掉栅极区域的保护层,在栅极区域沉积金属,形成肖特基接触,得到高栅压摆幅的增强型GaN功率器件。
如图1所示,本发明在衬底上依次外延生长缓冲层、AlGaN-1层、P-GaN层和AlGaN-2层。
在本发明中,所述衬底优选为硅衬底。
在本发明中,所述缓冲层优选为GaN层或AlGaN层。本发明对所述缓冲层的厚度没有特殊限定。本发明对所述缓冲层的生长条件没有特殊要求,采用本领域熟知的生长条件即可。
在本发明中,所述AlGaN-1层的厚度优选为5~25nm,更优选为10~20nm,进一步优选为15nm;所述AlGaN-1层中Al组分的摩尔百分含量优选为15~25%,更优选为18~22%,进一步优选为20%,Al组分呈均匀分布。本发明对所述AlGaN-1层的生长条件没有特殊要求,采用本领域熟知的生长条件即可。
在本发明中,所述P-GaN层的厚度优选>50nm,本发明对所述P-GaN层的厚度上限没有特殊要求。本发明对所述P-GaN层的生长条件没有特殊要求,采用本领域熟知的生长条件即可。
在本发明中,所述AlGaN-2层开始生长时Al组分的摩尔百分比为0%,生长结束时Al组分的摩尔百分比为10~30%,具体可以为10%、15%、20%、25%、30%;所述AlGaN-2层中Al组分的摩尔百分比连续渐变。
本发明控制AlGaN-2层中Al组分含量在上述范围,既能防止Al组分含量太大,会导致AlGaN-2的压电极化效应增强,会在其下方的P-GaN中产生二维电子气,影响器件工作;同时还能防止Al组分含量太低导致AlGaN-2的功函数较小,对栅压摆幅的提升作用不大。
此外,本发明控制AlGaN-2生长过程中Al组分渐变,渐变的方式可以有效释放生长过程中的应力,减弱压电极化效应。
在本发明中,所述AlGaN-2层在生长过程中掺入Mg元素;所述AlGaN-2层中Mg元素的掺杂浓度优选为5×1018/cm3~5×1019/cm3,更优选为8×1018/cm3~3×1019/cm3,进一步优选为1×1019/cm3。本发明通过掺入Mg,以使AlGaN-2层为P型半导体,确保与下方的P-GaN极性一样。若AlGaN-2层为N型,其与下方的P-GaN会形成PN结,导致器件工作时有电子积累,引起阈值电压漂移过大。
本发明AlGaN-2层的生长通过控制Al源的量渐变,来实现Al组分渐变,生长过程中持续通入Mg源,实现Mg的掺杂。
在本发明中,所述AlGaN-2层的厚度优选为0.1~100nm,更优选为10~90nm,进一步优选为30~70nm。
本发明对AlGaN-2层生长的具体条件不做特殊限定,采用本领域技术人员熟知的技术手段能够确保实现上述生长规律即可。
待各层外延生长完毕后,如图2所示,本发明将栅极以外区域的AlGaN-2层及P-GaN层刻蚀掉,退火,得到中间晶片。
本发明对所述刻蚀的方法没有特殊要求,采用本领域熟知的刻蚀方法即可,具体如利用ICP刻蚀机进行刻蚀。
在本发明中,所述退火的温度在800℃以上,保温时间在2min以上。在本发明中,所述退火优选在氮气氛围下进行。本发明通过进行退火,将P-GaN层激活,提升P-GaN层中的空穴浓度,对栅极下方的二维电子气起到耗尽作用,其他区域的二维电子气仍然存在。这是由于P-GaN层生长完成后,接着生长了AlGaN-2层,生长AlGaN-2层的过程中,P-GaN层会被钝化,导致P-GaN层中空穴浓度非常低,起不到耗尽作用。
如图3所示,得到中间晶片后,本发明在所述中间晶片表面生长SiN薄膜作为保护层,然后在源极区域和漏极区域刻蚀出凹槽,形成源极凹槽和漏极凹槽。
本发明对所述SiN薄膜的厚度和生长条件没有特殊要求,此为本领域公知常识。
形成源极凹槽和漏极凹槽后,本发明在所述源极凹槽和漏极凹槽沉积金属,形成欧姆接触,也即制备出源极电极和漏极电极。在本发明中,本发明对沉积的金属没有特殊要求,本领域熟知的源极电极和漏极电极所用金属即可,具体如Ti/Al。
如图4所示,本发明刻蚀掉栅极区域的保护层,在栅极区域沉积金属,形成肖特基接触,也即形成了栅极电极,得到高栅压摆幅的增强型GaN功率器件。
本发明对所述栅极区域沉积的金属种类没有特殊要求,采用本领域熟知的栅极电极金属即可,具体的如TiN/Al。
本发明提供了上述方案所述制备方法制备得到的高栅压摆幅的增强型GaN功率器件。本发明的增强型GaN功率器件具有高的栅压摆幅。
下面结合实施例对本发明提供的高栅压摆幅的增强型GaN功率器件及其制备方法进行详细的说明,但是不能把它们理解为对本发明保护范围的限定。
实施例1
如图1所示,将Si衬底放入MOCVD设备中,依次外延生长GaN缓冲层、AlGaN-1层、P-GaN层和AlGaN-2层;其中,GaN缓冲层的厚度为5μm;AlGaN-1层中Al组分摩尔百分比为20%,Al均匀掺杂,厚度为15nm;P-GaN层的厚度为60nm;AlGaN-2层在生长过程中需要掺Mg,以使AlGaN-2层为P型半导体,Mg掺浓度为1×1019/cm3,AlGaN-2层厚度为20nm,Al组分为渐变的,从开始生长时的0%渐变至生长结束时的10%;
利用ICP刻蚀机,将栅极区域的AlGaN-2层和P-GaN层保留,其他区域的AlGaN-2和P-GaN层刻蚀掉,暴露出下面的AlGaN-1层,然后在氮气氛围下进行退火,退火温度为800℃,保温时间为2min,将P-GaN层激活,得到中间晶片;
在所述中间晶片表面生长SiN薄膜作为保护层,然后在源极区域和漏极区域刻蚀出凹槽,形成源极凹槽和漏极凹槽;
在所述源极凹槽沉积Ti/Al金属,漏极凹槽沉积Ti/Al金属,形成欧姆接触;
刻蚀掉栅极区域的保护层,在栅极区域沉积TiN/Al金属,形成肖特基接触,得到高栅压摆幅的增强型GaN功率器件。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (10)
1.一种高栅压摆幅的增强型GaN功率器件的制备方法,其特征在于,包括以下步骤:
在衬底上依次外延生长缓冲层、AlGaN-1层、P-GaN层和AlGaN-2层;所述AlGaN-2层在生长过程中掺入Mg元素;所述AlGaN-2层开始生长时Al组分的摩尔百分比为0%,生长结束时Al组分的摩尔百分比为10~30%;所述AlGaN-2层中Al组分的摩尔百分比连续渐变;
将栅极以外区域的AlGaN-2层及P-GaN层刻蚀掉,退火,得到中间晶片;所述退火的温度在800℃以上,保温时间在2min以上;
在所述中间晶片表面生长SiN薄膜作为保护层,然后在源极区域和漏极区域刻蚀出凹槽,形成源极凹槽和漏极凹槽;
在所述源极凹槽和漏极凹槽沉积金属,形成欧姆接触;
刻蚀掉栅极区域的保护层,在栅极区域沉积金属,形成肖特基接触,得到高栅压摆幅的增强型GaN功率器件。
2.根据权利要求1所述的制备方法,其特征在于,所述AlGaN-2层的厚度为0.1~100nm。
3.根据权利要求2所述的制备方法,其特征在于,所述AlGaN-2层的厚度为10~80nm。
4.根据权利要求1~3任一项所述的制备方法,其特征在于,所述AlGaN-2层中Mg元素的掺杂浓度为5×1018/cm3~5×1019/cm3。
5.根据权利要求1所述的制备方法,其特征在于,所述缓冲层为GaN层或AlGaN层。
6.根据权利要求1所述的制备方法,其特征在于,所述P-GaN层的厚度>50nm。
7.根据权利要求1所述的制备方法,其特征在于,所述AlGaN-1层中Al组分的摩尔百分含量为15~25%,Al组分呈均匀分布。
8.根据权利要求1或7所述的制备方法,其特征在于,所述AlGaN-1层的厚度为5~25nm。
9.根据权利要求1所述的制备方法,其特征在于,所述退火在氮气氛围下进行。
10.权利要求1~9任一项所述制备方法制备得到的高栅压摆幅的增强型GaN功率器件。
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