JP2012160716A5 - - Google Patents

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Publication number
JP2012160716A5
JP2012160716A5 JP2012001728A JP2012001728A JP2012160716A5 JP 2012160716 A5 JP2012160716 A5 JP 2012160716A5 JP 2012001728 A JP2012001728 A JP 2012001728A JP 2012001728 A JP2012001728 A JP 2012001728A JP 2012160716 A5 JP2012160716 A5 JP 2012160716A5
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JP
Japan
Prior art keywords
film
forming
layer
oxide semiconductor
etching mask
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JP2012001728A
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English (en)
Japanese (ja)
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JP5888990B2 (ja
JP2012160716A (ja
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Priority to JP2012001728A priority Critical patent/JP5888990B2/ja
Priority claimed from JP2012001728A external-priority patent/JP5888990B2/ja
Publication of JP2012160716A publication Critical patent/JP2012160716A/ja
Publication of JP2012160716A5 publication Critical patent/JP2012160716A5/ja
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JP2012001728A 2011-01-12 2012-01-09 半導体装置の作製方法 Active JP5888990B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012001728A JP5888990B2 (ja) 2011-01-12 2012-01-09 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011004421 2011-01-12
JP2011004421 2011-01-12
JP2012001728A JP5888990B2 (ja) 2011-01-12 2012-01-09 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016026660A Division JP6093888B2 (ja) 2011-01-12 2016-02-16 半導体装置

Publications (3)

Publication Number Publication Date
JP2012160716A JP2012160716A (ja) 2012-08-23
JP2012160716A5 true JP2012160716A5 (enExample) 2015-02-26
JP5888990B2 JP5888990B2 (ja) 2016-03-22

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JP2012001728A Active JP5888990B2 (ja) 2011-01-12 2012-01-09 半導体装置の作製方法
JP2016026660A Expired - Fee Related JP6093888B2 (ja) 2011-01-12 2016-02-16 半導体装置

Family Applications After (1)

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JP2016026660A Expired - Fee Related JP6093888B2 (ja) 2011-01-12 2016-02-16 半導体装置

Country Status (3)

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US (1) US20120178224A1 (enExample)
JP (2) JP5888990B2 (enExample)
KR (1) KR101953911B1 (enExample)

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JP5977523B2 (ja) 2011-01-12 2016-08-24 株式会社半導体エネルギー研究所 トランジスタの作製方法
TWI570809B (zh) 2011-01-12 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP5982125B2 (ja) 2011-01-12 2016-08-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8536571B2 (en) 2011-01-12 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
TWI535032B (zh) 2011-01-12 2016-05-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
TWI657580B (zh) 2011-01-26 2019-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8809928B2 (en) * 2011-05-06 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and method for manufacturing the semiconductor device
JP6022880B2 (ja) 2011-10-07 2016-11-09 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP6026839B2 (ja) 2011-10-13 2016-11-16 株式会社半導体エネルギー研究所 半導体装置
US9018629B2 (en) 2011-10-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9117916B2 (en) 2011-10-13 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor film
US9040981B2 (en) 2012-01-20 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6076612B2 (ja) 2012-04-17 2017-02-08 株式会社半導体エネルギー研究所 半導体装置
JP6001308B2 (ja) 2012-04-17 2016-10-05 株式会社半導体エネルギー研究所 半導体装置
KR102113160B1 (ko) 2012-06-15 2020-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102148957B1 (ko) 2013-09-02 2020-08-31 삼성디스플레이 주식회사 표시 기판 및 표시 기판의 제조 방법
JP2015079946A (ja) * 2013-09-13 2015-04-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102796255B1 (ko) * 2020-04-22 2025-04-17 삼성디스플레이 주식회사 디스플레이 장치
CN112530978B (zh) * 2020-12-01 2024-02-13 京东方科技集团股份有限公司 开关器件结构及其制备方法、薄膜晶体管膜层、显示面板
US12295163B2 (en) 2021-12-16 2025-05-06 Asm Ip Holding B.V. Formation of gate stacks comprising a threshold voltage tuning layer

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JP5484853B2 (ja) * 2008-10-10 2014-05-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101751661B1 (ko) * 2008-12-19 2017-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터의 제작 방법
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KR102342672B1 (ko) * 2009-03-12 2021-12-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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WO2011132591A1 (en) * 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

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